STFV4N150 - STFW4N150 STP4N150 - STW4N150 N-channel 1500 V - 5 Ω - 4 A - PowerMESH™ Power MOSFET TO-220 - TO-220FH - TO-247 - TO-3PF Features Type VDSS RDS(on) max ID STFV4N150 STFW4N150 (1) STP4N150 STW4N150 1500 V 1500 V 1500 V 1500 V <7Ω <7Ω <7Ω <7Ω 4A 4A 4A 4A 3 1 2 2 TO-220 3 1 TO-247 1. All data which refers solely to the TO-3PF package is preliminary 3 ■ 100% avalanche tested ■ Intrinsic capacitances and Qg minimized ■ High speed switching ■ Fully isolated TO-3PF and TO-220FH plastic packages ■ Creepage distance path is 5.4 mm (typ.) for TO-3PF ■ Creepage distance path is > 4 mm for TO-220FH 1 TO-3PF Figure 1. 2 2 1 3 TO-220FH Internal schematic diagram. Application ■ Switching applications Description Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics. Table 1. Device summary Order codes Marking Package Packaging STFV4N150 4N150 TO-220FH Tube STFW4N150 4N150 TO-3PF Tube STP4N150 P4N150 TO-220 Tube STW4N150 W4N150 TO-247 Tube April 2008 Rev 6 1/16 www.st.com 16 Contents STFV4N150 - STFW4N150 - STP4N150 - STW4N150 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 .............................................. 9 STFV4N150 - STFW4N150 - STP4N150 - STW4N150 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Unit Parameter TO-220 TO-247 TO-220FH TO-3PF VDS Drain-source voltage (VGS = 0) 1500 V VGS Gate- source voltage ± 30 V ID Drain current (continuous) at TC = 25 °C 4 4 4 (1) 4 (1) A ID Drain current (continuous) at TC = 100 °C 2.5 2.5 2.5 (1) 2.5 (1) A IDM (1) Drain current (pulsed) 12 12 12 (1) 12 (1) A PTOT Total dissipation at TC = 25 °C 40 Tbd W Tstg Storage temperature Tj 160 Max. operating junction temperature -55 to 150 °C 150 °C 1. Pulse width limited by safe operating area Table 3. Thermal data Value Symbol Parameter Unit TO-220 TO-247 TO-220FH TO-3PF Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junctionambient max Table 4. Symbol 0.78 62.5 3.12 50 Tbd 62.5 °C/W °C/W Avalanche characteristics Parameter IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Value Unit 4 A 350 mJ 3/16 Electrical characteristics 2 STFV4N150 - STFW4N150 - STP4N150 - STW4N150 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. On/off states Symbol Parameter V(BR)DSS Drain-source Breakdown voltage Test conditions ID = 1 mA, VGS = 0 Zero gate voltage Drain current (VGS = 0) IGSS Gate-body leakage current (VDS = 0) VGS = ± 30 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on Static drain-source on resistance VGS = 10 V, ID = 2 A Symbol gfs (1) Ciss Coss Crss td(on) Tr td(off) tf Qg Qgs Qgd Max. 1500 3 Unit V 10 500 µA µA ± 100 nA 4 5 V 5 7 Ω Typ. Max. Unit VDS = Max rating, TC = 125 °C Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Test conditions VDS = 30 V, ID = 2 A VDS = 25 V, f = 1 MHz, VGS = 0 VDD = 750 V, ID = 2 A, RG = 4.7 Ω, VGS = 10 V (see Figure 21) VDD = 600 V, ID = 4 A, VGS = 10 V (see Figure 22) 1. Pulsed: pulse duration=300 µs, duty cycle 1.5% 4/16 Typ. VDS = Max rating IDSS Table 6. Min. Min. 3.5 S 1300 120 12 pF pF pF 35 30 45 45 ns ns ns ns 30 10 9 50 nC nC nC STFV4N150 - STFW4N150 - STP4N150 - STW4N150 Table 7. Symbol Source drain diode Parameter ISD ISDM(1) Source-drain current Source-drain current (pulsed) VSD(2) Forward on voltage trr Qrr IRRM trr Qrr IRRM Electrical characteristics Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current Test conditions Min. Typ. ISD = 4 A, VGS = 0 ISD = 4 A, di/dt = 100A/µs VDD = 45V (see Figure 21) ISD = 4 A, di/dt = 100 A/µs VDD = 45V, Tj = 150°C (see Figure 21) Max. Unit 4 12 A A 2 V 510 3 12 ns µC A 615 4 12.6 ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 5/16 Electrical characteristics STFV4N150 - STFW4N150 - STP4N150 - STW4N150 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220 Figure 4. Safe operating area for TO-220FH Figure 5. Thermal impedance for TO-220FH Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 6/16 STFV4N150 - STFW4N150 - STP4N150 - STW4N150 Figure 8. Output characteristics Figure 10. Transconductance Figure 9. Electrical characteristics Transfer characteristics Figure 11. Static drain-source on resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations 7/16 Electrical characteristics STFV4N150 - STFW4N150 - STP4N150 - STW4N150 Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized BVDSS vs temperature Figure 18. Maximum avalanche energy vs temperature 8/16 STFV4N150 - STFW4N150 - STP4N150 - STW4N150 3 Test circuits Test circuits Figure 19. Unclamped inductive load test circuit Figure 20. Unclamped inductive waveform Figure 21. Switching times test circuit for resistive load Figure 22. Gate charge test circuit Figure 23. Test circuit for inductive load Figure 24. Switching time waveform switching and diode recovery times 9/16 Package mechanical data 4 STFV4N150 - STFW4N150 - STP4N150 - STW4N150 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/16 STFV4N150 - STFW4N150 - STP4N150 - STW4N150 Package mechanical data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.48 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 11/16 Package mechanical data STFV4N150 - STFW4N150 - STP4N150 - STW4N150 TO-247 Mechanical data mm. Dim. A Min. 4.85 A1 2.20 Max. 5.15 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 e 15.75 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 øP 3.55 øR 4.50 S 12/16 Typ 3.65 5.50 5.50 STFV4N150 - STFW4N150 - STP4N150 - STW4N150 Package mechanical data TO-220FH (Fully plastic High voltage) MECHANICAL DATA mm DIM. MIN. A TYP. 4.4 inch MAX. MIN. 4.6 0.173 TYP. MAX. 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.3 1.8 0.051 0.070 F2 1.3 1.8 0.051 0.070 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L5 3.4 0.134 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 L8 14.5 15 0.570 L9 2.4 0.590 0.094 P011W 13/16 Package mechanical data STFV4N150 - STFW4N150 - STP4N150 - STW4N150 TO-3PF mechanical data DIM. A C D D1 E F F2 G G1 H L L2 L3 L4 L5 L6 L7 N R Dia min. 5.30 2.80 3.10 1.80 0.80 0.65 1.80 10.30 mm. typ max. 5.70 3.20 3.50 2.20 1.10 0.95 2.20 11.50 5.45 15.30 9.80 22.80 26.30 43.20 4.30 24.30 14.60 1.80 3.80 3.40 10 15.70 10.20 23.20 26.70 44.40 4.70 24.70 15 2.20 4.20 3.80 7627132_C 14/16 STFV4N150 - STFW4N150 - STP4N150 - STW4N150 5 Revision history Revision history Table 8. Document revision history Date Revision Changes 29-Mar-2005 1 Initial release 07-Jul-2005 2 Removed TO-220FP 07-Oct-2005 3 Document status promoted from preliminary data to datasheet 10-Aug-2006 4 Document reformatted, no content change 06-Nov-2007 5 Updated unit on Table 5: On/off states 09-Apr-2008 6 Added new packages: TO-220FH, TO-3PF 15/16 STFV4N150 - STFW4N150 - STP4N150 - STW4N150 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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