STP62NS04Z N-channel clamped 12.5mΩ - 62A - TO-220 Fully protected MESH OVERLAY™ Power MOSFET General features Type VDSS (@Tjmax) RDS(on) ID STP62NS04Z Clamped <0.015Ω 62A ■ 100% avalanche tested ■ Low capacitance and gate charge ■ 175° C maximum junction temperature 3 1 2 TO-220 Description This fully clamped MOSFET is produced by using the latest advanced Company’s Mesh Overlay process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions such as those encountered in the automotive environment. Any other application requiring extra ruggedness is also recommended. Internal schematic diagram Applications ■ Switching application Order codes Part number Marking Package Packaging STP62NS04Z P62NS04Z TO-220 Tube October 2006 Rev 5 1/12 www.st.com 12 Contents STP62NS04Z Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 ................................................ 8 STP62NS04Z 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) Clamped V VGS Gate-source voltage Clamped V ID Drain current (continuous) at TC = 25°C 62 A ID Drain current (continuous) at TC=100°C 37.5 A IDG Drain gate current (continuous) ± 50 IGS Gate sourcecurrent (continuous) ± 50 Drain current (pulsed) 248 A Total dissipation at TC = 25°C 110 W Derating factor 0.74 W/°C 8 V/ns 500 mJ 8 V -55 to 175 °C Value Unit IDM (1) PTOT (2) dv/dt EAS (3) VESD TJ Tstg Peak diode recovery voltage slope Single Pulse Avalanche Energy ESD (HBM - C = 100pF, R = 1.5 kΩ) Operating junction temperature Storage temperature 1. Pulse width limited by safe operating area 2. ISD ≤40A, di/dt ≤100A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX 3. Starting TJ = 25 oC, ID = 20A, VDD = 20V Table 2. Symbol Thermal data Parameter RthJC Thermal resistance junction-case Max 1.36 °C/W RthJA Thermal resistance junction-ambient Max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C 3/12 Electrical characteristics 2 STP62NS04Z Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol On/off states Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown voltage ID = 1mA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = 16V 10 µA IGSS Gate body leakage current (VDS = 0) VGS = ±10V 10 µA VGSS Gate-Source Breakdown Voltage IGS = 100 µA 18 VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA 2 RDS(on) Static drain-source on resistance VGS = 10V, ID = 30A V(BR)DSS Table 4. Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd 33 V V 4 V 12.5 15 mΩ Typ. Max. Unit Dynamic Parameter Test conditions Min. Forward transconductance VDS = 15V, ID = 30A 20 S Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f = 1 MHz, VGS = 0 1330 420 135 pF pF pF Total gate charge Gate-source charge Gate-drain charge VDD = 20V, ID = 40A VGS =10V 34 10 11.5 47 nC nC nC Typ. Max. Unit 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Table 5. Symbol td(on) tr td(off) tf tr(Voff) tf tc 4/12 Switching times Parameter Test conditions Turn-on delay time Rise time Turn-off delay time Fall time RG=4.7Ω, VGS = 10V Off-voltage rise time Fall time Cross-over time Vclamp = 30V, ID = 40A RG = 4.7Ω, VGS = 10V Figure 13 on page 8 VDD= 20V, ID= 20A, Figure 13 on page 8 Min. 13 104 41 42 ns ns ns ns 30 54 90 ns ns ns STP62NS04Z Electrical characteristics Table 6. Symbol Source drain diode Max Unit Source-drain current 62 A ISDM(1) Source-drain current (pulsed) 248 A VSD(2) Forward on voltage 1.5 V ISD trr Qrr IRRM Parameter Reverse recovery time Reverse recovery charge Reverse recovery current Test conditions Min Typ. ISD = 62A, VGS = 0 ISD = 40A, di/dt = 100A/µs, VDD = 20V, TJ = 150°C Figure 15 on page 8 45 65 2.9 ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 5/12 Electrical characteristics STP62NS04Z 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/12 STP62NS04Z Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 12. Normalized BVDSS vs temperature 7/12 Test circuit 3 STP62NS04Z Test circuit Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform 8/12 STP62NS04Z 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/12 Package mechanical data STP62NS04Z TO-220 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 10/12 TYP 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 STP62NS04Z 5 Revision history Revision history Table 7. Revision history Date Revision Changes 21-Jun-2004 2 Preliminary datasheet 22-Aug-2005 3 Complete document with curves 21-Jan-2006 4 New ECOPAK label 02-Oct-2006 5 New template, no content change 11/12 STP62NS04Z Please Read Carefully: Information in this document is provided solely in connection with ST products. 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