STMICROELECTRONICS STP180NS04ZC

STP180NS04ZC
N-channel clamped 3.5 mΩ - 120 A TO-220
fully protected SAFeFET™ Power MOSFET
Features
Type
VDSS
RDS(on)
max
ID
STP180NS04ZC
Clamped
< 4.2 mΩ
120 A
■
Low capacitance and gate charge
■
100% avalanche tested
■
3
1
175°C maximum junction temperature
2
TO-220
Applications
■
Switching application
Description
This fully clamped Power MOSFET is produced
by using the latest advanced company’s mesh
OVERLAY process which is based on a novel
strip layout. The inherent benefits of the new
technology coupled with the extra clamping
capabilities make this product particularly suitable
for the harshest operation conditions such as
those encountered in the automotive
environment. Any other application requiring extra
ruggedness is also recommended.
Table 1.
Figure 1.
Internal schematic diagram
Device summary
Order code
Marking
Package
Packaging
STP180NS04ZC
P180NS04ZC
TO-220
Tube
April 2008
Rev 1
1/12
www.st.com
12
Contents
STP180NS04ZC
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
........................... 6
3
Test circuit
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
................................................ 9
STP180NS04ZC
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
VDS
VDG
Parameter
Drain-source voltage (VGS = 0)
Drain-gate voltage
Value
Unit
33 (1)
V
(1)
V
33
VGS
Gate-source voltage
ID (2)
Drain current (continuous) at TC = 25 °C
120
A
(2)
Drain current (continuous) at TC=100 °C
120
A
IDG
Drain gate current (continuous)
±50
mA
IGS
Gate-source current (continuous)
±50
mA
IDM (3)
Drain current (pulsed)
480
A
PTOT
Total dissipation at TC = 25 °C
300
W
2
W/°C
ID
Derating factor
± 20
(1)
V
VESD(G-S)
Gate-source ESD (HBM-C=100 pF, R=1.5 kΩ)
±8
kV
VESD(G-D)
Gate-drain ESD (HBM-C=100 pF, R=1.5 kΩ)
±8
kV
VESD(D-S)
Drain-source ESD (HBM-C=100 pF, R=1.5 kΩ)
±8
kV
-55 to 175
°C
Value
Unit
TJ
Tstg
Operating junction temperature
Storage temperature
1. Voltage is limited by zener diodes
2. Current limited by wire bonding
3. Pulse width limited by safe operating area
Table 3.
Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case max
0.50
°C/W
Rthj-amb
Thermal resistance junction-ambient max
62.5
°C/W
Tl
Maximum lead temperature for soldering
purpose
300
°C
Table 4.
Avalanche data
Symbol
Parameter
Value
Unit
IAS
Avalanche current, repetitive or not repetitive
(pulse width limited by Tjmax δ < 1%)
80
A
EAS
Single pulse avalanche energy
(starting Tj=25 °C, ID=IAS, VDD=21 V)
(see Figure 17, Figure 14.)
1000
mJ
3/12
Electrical characteristics
2
STP180NS04ZC
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5.
Symbol
On/off states
Parameter
Test conditions
Min.
Typ.
Max.
Unit
41
V
V(BR)DG
Clamped voltage
ID = 1 mA, VGS = 0
-40 < Tj < 175 °C
VDSR(CL)
Drain-source clamping
voltage (DC)
IGS(CL) = -2 mA, ID = 1 A
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = 16 V
VDS = 16 V, Tj = 150 °C
VDS = 16 V, Tj = 175 °C
1
50
100
µA
µA
µA
IGSS (1)
Gate-body leakage
current (VDS = 0)
VGS = ±10 V
VGS = ±10 V,Tj = 175 °C
VGS = ±16 V,Tj = 175 °C
2
50
150
µA
µA
µA
VGSS
Gate-source
breakdown voltage
IGS = ±100 µA
18
25
V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 1 mA
2
3
4
V
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 40 A
3.5
4.2
mΩ
RG
Internal gate resistor
33
41
V
Ω
14
1. Gate Oxide, without zener diodes, tested at wafer sorting (IGSS < ± 100 nA @ ± 20 V Tj=25°). Figure 17.:
Unclamped Inductive load test circuit for electrical schematics
Table 6.
Symbol
gfs (1)
Ciss
Coss
Crss
tr(Voff)
tf
tc
Qg
Qgs
Qgd
Dynamic
Parameter
Test conditions
Forward transconductance
VDS =15 V, ID = 40 A
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25 V, f=1 MHz, VGS=0
Off voltage rise time
Fall time
Cross-over time
VCLAMP=30 V, ID=80 A,
VGS=10 V, RG=4.7 Ω
Total gate charge
Gate-source charge
Gate-drain charge
VDD=20 V, ID = 120 A
(see Figure 16)
VGS =10 V
(see Figure 15)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
4/12
Min.
Typ.
Max.
Unit
95
S
4560
1700
550
pF
pF
pF
250
115
290
ns
ns
ns
110
29
40
nC
nC
nC
STP180NS04ZC
Electrical characteristics
Table 7.
Symbol
ISD
ISDM
(1)
VSD(2)
trr
Qrr
IRRM
Source drain diode
Parameter
Test conditions
Min.
Typ.
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
ISD=120 A, VGS=0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=120 A, di/dt = 100 A/µs,
VDD= 32 V, Tj=150 °C
(see Figure 16)
56
70
12
Max.
Unit
120
480
A
A
1.5
V
ns
nC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300 µs, duty cycle 1.5%
5/12
Electrical characteristics
STP180NS04ZC
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
Figure 4.
Output characteristics
Figure 5.
Transfer characteristics
Figure 6.
Transconductance
Figure 7.
Static drain-source on resistance
6/12
STP180NS04ZC
Figure 8.
Electrical characteristics
Gate charge vs gate-source voltage Figure 9.
Capacitance variations
Figure 10. Normalized gate threshold voltage
vs temperature
Figure 11. Normalized on resistance vs
temperature
Figure 12. Source-drain diode forward
characteristics
Figure 13. Normalized BVDSS vs temperature
7/12
Test circuit
3
STP180NS04ZC
Test circuit
Figure 14. Unclamped inductive waveform
Figure 15. Gate charge test circuit
Figure 16. Test circuit for inductive load
Figure 17. Unclamped Inductive load test
switching and diode recovery times
circuit
8/12
STP180NS04ZC
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
9/12
Package mechanical data
STP180NS04ZC
TO-220 mechanical data
mm
inch
Dim
Min
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
10/12
Typ
4.40
0.61
1.14
0.48
15.25
Max
Min
4.60
0.88
1.70
0.70
15.75
0.173
0.024
0.044
0.019
0.6
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
1.27
10
2.40
4.95
1.23
6.20
2.40
13
3.50
Max
0.181
0.034
0.066
0.027
0.62
0.050
16.40
28.90
3.75
2.65
Typ
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
0.645
1.137
3.85
2.95
0.147
0.104
0.151
0.116
STP180NS04ZC
5
Revision history
Revision history
Table 8.
Document revision history
Date
Revision
03-Apr-2008
1
Changes
First release
11/12
STP180NS04ZC
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2008 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
12/12