VN5E160AS-E
Single channel high side driver with analog
for automotive applications
Features
Max supply voltage
VCC
Operating voltage range
VCC 4.5 V to 28 V
Max ON-state resistance
(per ch.)
RON
160 mΩ
Current limitation (typ)
ILIMH
10 A
IS
2 µA(1)
OFF-state supply current
41 V
■
■
General
– Inrush current active management by
power limitation
– Very low standby current
– 3.0 V CMOS compatible inputs
– Optimized electromagnetic emission
– Very low electromagnetic susceptibility
– In compliance with the 2002/95/EC
european directive
– Very low current sense leakage
Diagnostic functions
– Proportional load current sense
– High-precision current sense for
wide-range currents
– Current sense disable
– OFF-state open-load detection
– Output short to VCC detection
– Overload and short to ground
(power limitation) indication
Protections
– Undervoltage shutdown
– Overvoltage clamp
– Load current limitation
– Self-limiting of fast thermal transients
– Protection against loss of ground and loss
of VCC
– Overtemperature shutdown with
autorestart (thermal shutdown)
May 2011
("1($'5
– Reverse battery protected
– Electrostatic discharge protection
Application
1. Typical value with all loads connected.
■
62
■
All types of resistive, inductive and capacitive
loads
■
Suitable as LED driver
Description
The VN5E160AS-E is a single-channel high-side
driver manufactured in the ST proprietary
VIPower™ M0-5 technology and housed in the
tiny SO-8 package. The VN5E160AS-E is
designed to drive 12 V automotive grounded
loads delivering protection, diagnostics and easy
3 V and 5 V CMOS compatible interface with any
microcontroller.
The device integrates advanced protective
functions such as load current limitation, inrush
and overload active management by power
limitation, overtemperature shut-off with
auto-restart and overvoltage active clamp. A
dedicated analog current sense pin is associated
with every output channel in order to provide
ehnanced diagnostic functions including fast
detection of overload and short-circuit to ground
through power limitation indication,
overtemperature indication, short-circuit to VCC
diagnosis and ON & OFF state open-load
detection. The current sensing and diagnostic
feedback of the whole device can be disabled by
pulling the CS_DIS pin high to allow sharing of
the external sense resistor with other similar
devices.
Doc ID 15609 Rev 3
1/37
www.st.com
1
Contents
VN5E160AS-E
Contents
1
Block diagram and pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2
Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3
2.1
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.2
Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.4
Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2.5
Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
3.1
GND protection network against reverse battery . . . . . . . . . . . . . . . . . . . 24
3.1.1
Solution 1: resistor in the ground line (RGND only) . . . . . . . . . . . . . . . . 24
3.1.2
Solution 2: a diode (DGND) in the ground line . . . . . . . . . . . . . . . . . . . 25
3.2
Load dump protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
3.3
MCU I/Os protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
3.4
Current sense and diagnostic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
3.4.1
3.5
4
Maximum demagnetization energy (VCC = 13.5 V) . . . . . . . . . . . . . . . . . 28
Package and PCB thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
4.1
5
Short to VCC and OFF-state open load detection . . . . . . . . . . . . . . . . . 27
SO-8 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
5.1
ECOPACK® . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
5.2
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
5.3
Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
6
Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
2/37
Doc ID 15609 Rev 3
VN5E160AS-E
List of tables
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
Table 10.
Table 11.
Table 12.
Table 13.
Table 14.
Table 15.
Table 16.
Table 17.
Table 18.
Pin function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Suggested connections for unused and not connected pins . . . . . . . . . . . . . . . . . . . . . . . . 6
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Power section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Switching (VCC = 13 V; Tj = 25 °C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Logic inputs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Protection and diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Current sense (8 V < VCC < 18 V). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Openload detection (8 V < VCC < 18 V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Truth table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Electrical transient requirements (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Electrical transient requirements (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Electrical transient requirements (part 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Thermal parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
SO-8 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Doc ID 15609 Rev 3
3/37
List of figures
VN5E160AS-E
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Figure 11.
Figure 12.
Figure 13.
Figure 14.
Figure 15.
Figure 16.
Figure 17.
Figure 18.
Figure 19.
Figure 20.
Figure 21.
Figure 22.
Figure 23.
Figure 24.
Figure 25.
Figure 26.
Figure 27.
Figure 28.
Figure 29.
Figure 30.
Figure 31.
Figure 32.
Figure 33.
Figure 34.
Figure 35.
Figure 36.
Figure 37.
Figure 38.
Figure 39.
Figure 40.
Figure 41.
4/37
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Configuration diagram (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Current and voltage conventions(1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Current sense delay characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
OFF-state open-load delay timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Switching characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Delay response time between rising edge of ouput current and rising edge of current
sense (CS enabled) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Output voltage drop limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
IOUT/ISENSE vs IOUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Maximum current sense ratio drift vs load current(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Normal operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Overload or short to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Intermittent overload . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
OFF-state open-load with external circuitry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Short to VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
TJ evolution in overload or short to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
OFF-state output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
High-level input current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Input voltage clamp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Low-level input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
High-level input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Hysteresis input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
ON-state resistance vs. Tcase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
ON-state resistance vs. VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Undervoltage shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Turn-on voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
ILIMH vs. Tcase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Turn-off voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
High-level CS_DIS voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
CS_DIS voltage clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Low-level CS_DIS voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Application schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Current sense and diagnostic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Maximum turn-off current versus inductance (for each channel)(1) . . . . . . . . . . . . . . . . . . 28
SO-8 PC board(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Rthj-amb vs PCB copper area in open box free air condition . . . . . . . . . . . . . . . . . . . . . . 29
SO-8 thermal impedance junction ambient single pulse. . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Thermal fitting model of an HSD in SO-8(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
SO-8 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
SO-8 tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
SO-8 tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Doc ID 15609 Rev 3
VN5E160AS-E
1
Block diagram and pin configuration
Block diagram and pin configuration
Figure 1.
Block diagram
6##
3IGNAL#LAMP
5NDERVOLTAGE
).
#ONTROL$IAGNOSTIC
0OWER
#LAMP
$2)6%2
6/.
,IMITATION
/VER
TEMPERATURE
#URRENT
,IMITATION
/&&3TATE
/PENLOAD
#3?
$)3
63%.3%(
#3
#URRENT
3ENSE
/54
/6%2,/!$02/4%#4)/.
!#4)6%0/7%2,)-)4!4 )/.
,/')#
'.$
'!0'#&4
Table 1.
Pin function
Name
Function
VCC
Battery connection.
OUT
Power output.
GND
Ground connection. Must be reverse battery protected by an external
diode/resistor network.
IN
Voltage-controlled input pin with hysteresis, CMOS compatible. Controls output
switch state.
CS
Analog current sense pin, delivers a current proportional to the load current.
CS_DIS
Active high CMOS compatible pin, to disable the current sense pin.
Doc ID 15609 Rev 3
5/37
Block diagram and pin configuration
Figure 2.
VN5E160AS-E
Configuration diagram (top view)
6##
/54
/54
6##
3/
Table 2.
6/37
#3?$)3
'.$
#3
).
'!0'#&4
Suggested connections for unused and not connected pins
Connection / pin
Current sense
N.C.
Output
Input
CS_DIS
Floating
Not allowed
X
X
X
X
To ground
Through 1 kΩ
resistor
X
Not allowed
Doc ID 15609 Rev 3
Through 10 kΩ Through 10 kΩ
resistor
resistor
VN5E160AS-E
2
Electrical specifications
Electrical specifications
Figure 3.
Current and voltage conventions(1)
)3
6##
)#3$
6&
)/54
/54
#3?$)3
6/54
6#3$
)).
6##
).
)3%.3%
#3
6).
'.$
63%.3%
)'.$
'!0'#&4
1. VF = VOUT - VCC during reverse battery condition.
2.1
Absolute maximum ratings
Stressing the device above the ratings listed in the “absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to the conditions in the “absolute maximum
ratings” table for extended periods may affect device reliability. Refer also to the
STMicroelectronics SURE program and other relevant quality documents.
Table 3.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCC
DC supply voltage
41
V
-VCC
Reverse DC supply voltage
0.3
V
- IGND
DC reverse ground pin current
200
mA
Internally limited
A
6
A
DC input current
-1 to 10
mA
DC current sense disable input current
-1 to 10
mA
200
mA
VCC - 41
+VCC
V
V
IOUT
- IOUT
IIN
ICSD
DC output current
Reverse DC output current
-ICSENSE DC reverse CS pin current
VCSENSE Current sense maximum voltage
Doc ID 15609 Rev 3
7/37
Electrical specifications
Table 3.
Absolute maximum ratings (continued)
Symbol
Parameter
Unit
36
mJ
Maximum switching energy (single pulse)
(L = 8 mH; RL = 0 Ω; Vbat = 13.5 V; Tjstart = 150 °C;
IOUT = IlimL(Typ.) )
VESD
Electrostatic discharge
(human body model: R = 1.5 KΩ; C = 100 pF)
– IN
– CS
– CS_DIS
– OUT
– VCC
4000
2000
4000
5000
5000
V
V
V
V
V
VESD
Charge device model (CDM-AEC-Q100-011)
750
V
Junction operating temperature
-40 to 150
°C
Storage temperature
-55 to 150
°C
Tstg
Thermal data
Table 4.
Symbol
Rthj-pins
Thermal data
Parameter
Thermal resistance junction-pins
Rthj-amb Thermal resistance junction-ambient
8/37
Value
EMAX
Tj
2.2
VN5E160AS-E
Doc ID 15609 Rev 3
Max value
Unit
30
°C/W
See Figure 36
°C/W
VN5E160AS-E
2.3
Electrical specifications
Electrical characteristics
Values specified in this section are for 8 V < VCC < 28 V; -40 °C < Tj < 150 °C, unless
otherwise stated.
Table 5.
Power section
Symbol
Parameter
Test conditions
VCC
Operating supply voltage
VUSD
VUSDhyst
RON
Vclamp
IS
IL(off1)
VF
Min. Typ. Max. Unit
13
28
V
Undervoltage shut-down
3.5
4.5
V
Undervoltage shut-down
hysteresis
0.5
ON-state resistance
Voltage clamp
4.5
IOUT = 1 A, Tj = 25 °C
160
IOUT = 1 A, Tj = 150 °C
320
IOUT = 1 A, VCC = 5 V, Tj = 25 °C
210
IS = 20 mA
Supply current
OFF-state output current
Output - VCC diode
voltage
V
41
mΩ
46
52
V
OFF-state: VCC = 13 V,
VIN = VOUT = 0 V, Tj = 25 °C
2(1)
5(1)
µA
ON-state: VIN = 5 V, VCC = 13 V,
IOUT = 0 A
1.9
3.5
mA
0.01
3
VIN = VOUT = 0 V, VCC = 13 V,
Tj = 25 °C
0
VIN = VOUT = 0 V, VCC = 13 V,
Tj = 125 °C
0
µA
-IOUT = 1 A, Tj = 150 °C
5
0.7
V
1. PowerMOS leakage included.
Table 6.
Symbol
Switching (VCC = 13 V; Tj = 25 °C)
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
RL = 13 Ω
(see Figure 6)
—
10
—
µs
td(off)
Turn-off delay time
RL = 13 Ω
(see Figure 6)
—
10
—
µs
dVOUT/dt(on) Turn-on voltage slope RL = 13 Ω
—
See Figure 26
—
V/µs
dVOUT/dt(off) Turn-off voltage slope RL = 13 Ω
—
See Figure 28
—
V/µs
WON
Switching energy
losses during twon
RL = 13 Ω
(see Figure 6)
—
0.05
—
mJ
WOFF
Switching energy
losses during twoff
RL = 13 Ω
(see Figure 6)
—
0.03
—
mJ
Doc ID 15609 Rev 3
9/37
Electrical specifications
Table 7.
Symbol
VN5E160AS-E
Logic inputs
Parameter
Test conditions
VIL
Low-level input voltage
IIL
Low-level input current
VIH
High-level input voltage
IIH
High-level input current
VI(hyst)
Hysteresis input voltage
VICL
ICSDL
Low-level CS_DIS current
VCSDH
High-level CS_DIS voltage
ICSDH
High-level CS_DIS current
VCSD(hyst)
Hysteresis CS_DIS voltage
Symbol
CS_DIS voltage clamp
0.9
V
2.1
V
10
5.5
7
V
-0.7
VCSD = 0.9 V
µA
2.1
V
VCSD = 2.1 V
10
0.25
ICSD = 1 mA
V
1
µA
V
5.5
7
V
ICSD = -1 mA
-0.7
Protection and diagnostics(1)
Parameter
Test conditions
VCC = 13 V
VCC = 13 V
Short-circuit current
during thermal cycling TR < Tj < TTSD
TTSD
Shutdown
temperature
TR
Reset temperature
TRS
Thermal reset of
STATUS
Min.
Typ.
Max.
Unit
7
10
14
A
14
A
5 V < VCC < 28 V
2.5
150
175
TRS + 1
TRS + 5
A
200
135
Thermal hysteresis
(TTSD - TR)
Turn-off output
voltage clamp
IOUT = 1 A, VIN = 0,
L = 20 mH
Output voltage drop
limitation
IOUT = 0.03 A (see Figure 8)
Tj = -40 °C to +150 °C
Doc ID 15609 Rev 3
°C
°C
°C
7
°C
VCC - 41 VCC - 46 VCC - 52
V
25
mV
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
10/37
µA
V
0.9
IlimL
VON
Unit
0.25
DC short-circuit
current
VDEMAG
Max.
µA
VIN = 2.1 V
IlimH
THYST
Typ.
1
IIN = -1 mA
Low-level CS_DIS voltage
Table 8.
VIN = 0.9 V
IIN = 1 mA
Input voltage clamp
VCSDL
VCSCL
Min.
VN5E160AS-E
Electrical specifications
Table 9.
Symbol
K0
K1
dK1/K1(1)
K2
dK2/K2(1)
K3
dK3/K3(1)
ISENSE0
VSENSE
Current sense (8 V < VCC < 18 V)
Parameter
Test conditions
Min.
Typ.
Max.
IOUT/ISENSE
IOUT = 0.025 A, VSENSE = 0.5 V
Tj = -40 °C to 150 °C
265
490
715
IOUT/ISENSE
IOUT = 0.35 A, VSENSE = 0.5 V
Tj = -40 °C to 150 °C
Tj = 25 °C to 150 °C
355
385
465
465
575
545
Current sense ratio drift
IOUT =0.35 A, VSENSE = 0.5 V
Tj = -40 °C to 150 °C
IOUT/ISENSE
IOUT = 0.5 A, VSENSE = 4 V
Tj = -40 °C to 150 °C
Tj = 25 °C to 150 °C
Current sense ratio drift
IOUT = 0.5 A;
Tj = -40 °C to 150 °C
IOUT/ISENSE
IOUT = 1.5 A, VSENSE = 4 V
Tj = -40 °C to 150 °C
Tj = 25 °C to 150 °C
Current sense ratio drift
IOUT = 1.5 A;
Tj = -40 °C to 150 °C
-4
+4
IOUT = 0 A, VSENSE = 0 V,
VCSD = 5 V, VIN = 0 V,
Tj = -40 °C to 150 °C
0
1
IOUT = 0 A, VSENSE = 0 V,
VCSD = 0 V, VIN = 5 V,
Tj = -40 °C to 150 °C
0
2
IOUT = 1 A, VSENSE = 0 V,
VCSD = 5 V, VIN = 5 V,
Tj = -40 °C to 150 °C
0
1
RSENSE = 10 KΩ
IOUT = 1 A;
5
Analog sense leakage
current
Max analog sense
output voltage
-11
380
400
+11
455
455
-8
420
420
%
530
510
+8
455
455
Unit
%
490
480
%
µA
V
VSENSEH(2)
Analog sense output
V = 13 V, RSENSE = 3.9 KΩ
voltage in fault condition CC
8
V
ISENSEH(2)
Analog sense output
V = 13 V, VSENSE = 5 V
current in fault condition CC
9
mA
Delay response time
tDSENSE1H from falling edge of
CS_DIS pin
VSENSE < 4 V,
0.025 A < IOUT < 1.5 A
ISENSE = 90% of ISENSE max
(see Figure 4)
40
100
µs
Delay response time
tDSENSE1L from rising edge of
CS_DIS pin
VSENSE < 4 V,
0.025 A < IOUT < 1.5 A
ISENSE = 10% of ISENSE max
(see Figure 4)
5
20
µs
Doc ID 15609 Rev 3
11/37
Electrical specifications
Table 9.
Symbol
VN5E160AS-E
Current sense (8 V < VCC < 18 V) (continued)
Parameter
Test conditions
Delay response time
tDSENSE2H from rising edge of IN
pin
VSENSE < 4 V,
0.025 A < IOUT < 1.5 A
ISENSE=90% of ISENSE max
(see Figure 4)
Delay response time
between rising edge of
ΔtDSENSE2H
output current and rising
edge of current sense
VSENSE < 4 V,
ISENSE = 90% of ISENSEMAX,
IOUT = 90% of IOUTMAX
IOUTMAX=1.5A (see Figure 7)
Delay response time
tDSENSE2L from falling edge of IN
pin
VSENSE < 4 V,
0.025 A < IOUT < 1.5 A
ISENSE=10% of ISENSE max
(see Figure 4)
Min.
Typ.
Max.
Unit
30
160
µs
110
µs
250
µs
Max.
Unit
80
1. Parameter guaranteed by design; it is not tested.
2. Fault condition includes: power limitation, overtemperature and open load OFF-state detection.
Table 10.
Symbol
Parameter
Test conditions
Min.
Typ.
VOL
OFF-state open-load
voltage detection
threshold
VIN = 0 V, 8 V < VCC < 18 V
2
4
V
IOL
ON-state open-load
current detection
threshold
VIN = 5V, 8 V < VCC < 18 V
ISENSE = 5 µA
0.5
5
mA
180
1200
µs
0
tDSTKON
12/37
Openload detection (8 V < VCC < 18 V)
Output short-circuit to VCC
See Figure 5
detection delay at turn-off
IL(off2)r
OFF-state output current
at VOUT = 4 V
VIN = 0 V, VSENSE = 0 V
VOUT rising from 0 V to 4 V
-120
IL(off2)f
OFF-state output current
at VOUT = 2 V
VIN = 0 V, VSENSE = VSENSEH
VOUT falling from VCC to 2 V
-50
td_vol
Delay response from
output rising edge to
VSENSE rising edge in
open-load
VOUT = 4 V, VIN = 0 V
VSENSE= 90% of VSENSEH
Doc ID 15609 Rev 3
µA
90
20
µs
VN5E160AS-E
Electrical specifications
Figure 4.
Current sense delay characteristics
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Figure 5.
OFF-state open-load delay timing
2XWSXWVWXFNDW9&&
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Figure 6.
Switching characteristics
9287
W:RQ
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G9287GWRII
G9287GWRQ
WU
WI
W
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Doc ID 15609 Rev 3
13/37
Electrical specifications
Figure 7.
VN5E160AS-E
Delay response time between rising edge of ouput current and rising
edge of current sense (CS enabled)
9,1
ǻW'6(16(+
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Figure 8.
Output voltage drop limitation
9&&9287
7M &
7M &
7M &
921
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9215217
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14/37
Doc ID 15609 Rev 3
VN5E160AS-E
Electrical specifications
Figure 9.
IOUT/ISENSE vs IOUT
IOUT/ISENSE
620
590
560
A
530
B
500
470
C
440
410
D
380
E
350
320
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
IOUT (A)
D: Min, Tj = 25 °C to 150 °C
E: Min, Tj = -40 °C to 150 °C
A: Max, Tj = -40 °C to 150 °C
B: Max, Tj = 25 °C to 150 °C
C: Typical, Tj = -40 °C to 150 °C
Figure 10. Maximum current sense ratio drift vs load current(1)
dK/K (%)
15
12
9
A
6
3
0
-3
-6
B
-9
-12
-15
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
IOUT (A)
A: Max, Tj = -40 °C to 150 °C
B: Min, Tj = 25 °C to 150 °C
1. Parameter guaranteed by design; it is not tested.
Doc ID 15609 Rev 3
15/37
Electrical specifications
Table 11.
VN5E160AS-E
Truth table
Conditions
IN
OUT
SENSE (VCSD = 0 V)(1)
Normal operation
L
H
L
H
0
Nominal
Overtemperature
L
H
L
L
0
VSENSEH
Undervoltage
L
H
L
L
0
0
H
X
(no power limitation)
Cycling
(power limitation)
Nominal
Overload
H
VSENSEH
Short circuit to GND
(Power limitation)
L
H
L
L
0
VSENSEH
OFF-state open-load
(with external pull-up)
L
H
VSENSEH
1. If the VCSD is high, the SENSE output is at a high impedance, its potential depends on leakage currents
and external circuit.
16/37
Doc ID 15609 Rev 3
VN5E160AS-E
Electrical specifications
Table 12.
ISO 7637-2:
2004(E)
Electrical transient requirements (part 1)
Test levels(1)
Number of
pulses or
test times
Burst cycle/pulse
repetition time
Delays and
Impedance
Test pulse
III
IV
1
-75 V
-100 V
5000
pulses
0.5 s
5s
2 ms, 10 Ω
2a
+37 V
+50 V
5000
pulses
0.2 s
5s
50 µs, 2 Ω
3a
-100 V
-150 V
1h
90 ms
100 ms
0.1 µs, 50 Ω
3b
+75 V
+100 V
1h
90 ms
100 ms
0.1 µs, 50 Ω
4
-6 V
-7 V
1 pulse
100 ms,
0.01 Ω
5b(2)
+65 V
+87 V
1 pulse
400 ms, 2 Ω
Table 13.
Electrical transient requirements (part 2)
Test level results(1)
ISO 7637-2:
2004(E)
Test pulse
III
IV
1
C
C
2a
C
C
3a
C
C
3b
C
C
4
C
C
5b(2)
C
C
1. The above test levels must be considered referred to VCC = 13.5 V except for pulse 5b
2. Valid in case of external load dump clamp: 40 V maximum referred to ground.
Table 14.
Electrical transient requirements (part 3)
Class
Contents
C
All functions of the device are performed as designed after exposure to disturbance.
E
One or more functions of the device are not performed as designed after exposure to
disturbance and cannot be returned to proper operation without replacing the device.
Doc ID 15609 Rev 3
17/37
Electrical specifications
2.4
VN5E160AS-E
Waveforms
Figure 11. Normal operation
1RUPDORSHUDWLRQ
,1387
1RPLQDOORDG
1RPLQDOORDG
,287
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9&6B',6
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Figure 12. Overload or short to GND
2YHUORDGRU6KRUWWR*1'
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, /LP+!
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, /LP/!
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96(16(
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18/37
Doc ID 15609 Rev 3
VN5E160AS-E
Electrical specifications
Figure 13. Intermittent overload
,QWHUPLWWHQW2YHUORDG
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,/LP+ !
,/LP/ !
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Figure 14. OFF-state open-load with external circuitry
2)) 6WDWH2SHQ/RDG
ZLWKH[WHUQDOFLUFXWU\
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96(16(+ !
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Doc ID 15609 Rev 3
19/37
Electrical specifications
VN5E160AS-E
Figure 15. Short to VCC
6KRUWWR9&&
9287
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+DUG
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Figure 16. TJ evolution in overload or short to GND
7- HYROXWLRQLQ
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20/37
Doc ID 15609 Rev 3
VN5E160AS-E
2.5
Electrical specifications
Electrical characteristics curves
Figure 17. OFF-state output current
Figure 18. High-level input current
)LOFF;N!=
)IH;U!=
7JO7
4C; #=
Figure 19. Input voltage clamp
Figure 20. Low-level input voltage
6IL;6=
*JON"
'!0'#&4
6ICL;6=
4C; #=
'!0'#&4
4C; #=
4C; #=
'!0'#&4
Figure 21. High-level input voltage
'!0'#&4
Figure 22. Hysteresis input voltage
6IHYST;6=
6IH;6=
4C; #=
4C; #=
'!0'#&4
'!0'#&4
Doc ID 15609 Rev 3
21/37
Electrical specifications
VN5E160AS-E
Figure 23. ON-state resistance vs. Tcase Figure 24. ON-state resistance vs. VCC
2ON;M/HM=
2ON;M/HM=
)OUT!
6CC6
5D$
5D$
5D$
5D$
4C; #=
'!0'#&4
'!0'#&4
Figure 25. Undervoltage shutdown
Figure 26. Turn-on voltage slope
6USD;6=
D6OUTDT/N;6MS=
6CC6
2Lȍ
4C; #=
Figure 27. ILIMH vs. Tcase
'!0'#&4
Figure 28. Turn-off voltage slope
)LIMH;!=
D6OUTDT/FF;6MS=
6CC 6
4C; #=
'!0'#&4
4C; #=
6CC6
2Lȍ
4C; #=
'!0'#&4
22/37
6CC;6=
Doc ID 15609 Rev 3
'!0'#&4
VN5E160AS-E
Electrical specifications
Figure 29. High-level CS_DIS voltage
Figure 30. CS_DIS voltage clamp
6CSDCL;6=
6CSDH;6=
*JON"
4C; #=
4C; #=
'!0'#&4
'!0'#&4
Figure 31. Low-level CS_DIS voltage
6CSDL;6=
4C; #=
'!0'#&4
Doc ID 15609 Rev 3
23/37
Application information
3
VN5E160AS-E
Application information
Figure 32. Application schematic
6
6##
2PROT
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).
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3.1
GND protection network against reverse battery
3.1.1
Solution 1: resistor in the ground line (RGND only)
This can be used with any type of load.
The following is an indication on how to dimension the RGND resistor.
1.
RGND ≤ 600 mV / (IS(on)max).
2.
RGND ≥ (−VCC) / (-IGND)
where -IGND is the DC reverse ground pin current and can be found in the absolute
maximum rating section of the device datasheet.
Power dissipation in RGND (when VCC < 0: during reverse battery situations) is:
Equation 1
PD = (-VCC)2 / RGND
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where IS(on)max becomes the sum of the
maximum ON-state currents of the different devices.
Please note that if the microprocessor ground is not shared by the device ground then the
RGND produces a shift (IS(on)max * RGND) in the input thresholds and the status output
24/37
Doc ID 15609 Rev 3
VN5E160AS-E
Application information
values. This shift varies depending on how many devices are ON in the case of several highside drivers sharing the same RGND.
If the calculated power dissipation leads to a large resistor or several devices have to share
the same resistor then ST suggests to utilize Solution 2 (see Section 3.1.2: Solution 2: a
diode (DGND) in the ground line).
3.1.2
Solution 2: a diode (DGND) in the ground line
A resistor (RGND = 1 kΩ) should be inserted in parallel to DGND if the device drives an
inductive load.
This small signal diode can be safely shared amongst several different HSDs. Also in this
case, the presence of the ground network produces a shift (≈600 mV) in the input threshold
and in the status output values if the microprocessor ground is not common to the device
ground. This shift not varies if more than one HSD shares the same diode/resistor network.
3.2
Load dump protection
Dld is necessary (voltage transient suppressor) if the load dump peak voltage exceeds the
VCC max DC rating. The same applies if the device is subject to transients on the VCC line
that are greater than the ones shown in the ISO T/R 7637/1 table.
3.3
MCU I/Os protection
If a ground protection network is used and negative transients are present on the VCC line,
the control pins is pulled negative. ST suggests to insert a resistor (Rprot) in line to prevent
the microcontroller I/O pins to latch-up.
The value of these resistors is a compromise between the leakage current of microcontroller
and the current required by the HSD I/Os (input levels compatibility) with the latch-up limit of
microcontroller I/Os.
Equation 2
-VCCpeak / Ilatchup ≤ Rprot ≤ (VOHμC - VIH - VGND) / IIHmax
Calculation example:
For VCCpeak = - 100 V, Ilatchup ≥ 20 mA, VOHμC ≥ 4.5 V
5 kΩ ≤ Rprot ≤ 180 kΩ.
Recommended values: Rprot =10 kΩ, CEXT = 10 nF.
Doc ID 15609 Rev 3
25/37
Application information
3.4
VN5E160AS-E
Current sense and diagnostic
The current sense pin performs a double function (see Figure 33: Current sense and
diagnostic):
●
Current mirror of the load current in normal operation, delivering a current
proportional to the load one according to a known ratio KX.
The current ISENSE can be easily converted to a voltage VSENSE by means of an
external resistor RSENSE. Linearity between IOUT and VSENSE is ensured up to 5 V
minimum (see parameter VSENSE in Table 9: Current sense (8 V < VCC < 18 V)). The
current sense accuracy depends on the output current (refer to current sense electrical
characteristics Table 9: Current sense (8 V < VCC < 18 V)).
●
Diagnostic flag in fault conditions, delivering a fixed voltage VSENSEH up to a
maximum current ISENSEH in case of the following fault conditions (refer to Truth table):
–
Power limitation activation
–
Overtemperature
–
Short to VCC in OFF-state
–
Open-load in OFF-state with additional external components.
A logic high-level on CS_DIS pin sets at the same time all the current sense pins of the
devices in a high-impedance-state, thus disabling the current monitoring and diagnostic
detection. This feature allows multiplexing of the microcontroller analog inputs by sharing of
sense resistance and ADC line among different devices.
Figure 33. Current sense and diagnostic
605
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26/37
Doc ID 15609 Rev 3
VN5E160AS-E
3.4.1
Application information
Short to VCC and OFF-state open load detection
Short to VCC
A short-circuit between VCC and output is indicated by the relevant current sense pin set to
VSENSEH during the device OFF-state. Small or no current is delivered by the current sense
during the ON-state depending on the nature of the short-circuit.
OFF-state open-load with external circuitry
Detection of an open-load in off-mode requires an external pull-up resistor RPU connecting
the output to a positive supply voltage VPU.
It is preferable VPU to be switched-off during the module standby-mode in order to avoid the
overall standby current consumption to increase in normal conditions, i.e. when load is
connected.
An external pull-down resistor RPD connected between output and GND is mandatory to
avoid misdetection in case of floating outputs in OFF-state (see Figure 33: Current sense
and diagnostic).
RPD must be selected in order to ensure VOUT < VOLmin unless pulled up by the external
circuitry:
Equation 3
VOUT Pull−up _ OFF = RPD ⋅ IL(off2)f < VOLmin = 2 V
RPD ≤ 22 KΩ is recommended.
For proper open load detection in OFF-state, the external pull-up resistor must be selected
according to the following formula:
Equation 4
VOUT Pull−up _ ON =
(RPD ⋅ VPU ) − (RPU ⋅ RPD ⋅ IL(off2)r )
> VOLmax = 4 V
(RPU + RPD )
For the values of VOLmin ,VOLmax, IL(off2)r and IL(off2)f (see Table 10: Openload detection (8 V
< VCC < 18 V).
Doc ID 15609 Rev 3
27/37
Application information
3.5
VN5E160AS-E
Maximum demagnetization energy (VCC = 13.5 V)
Figure 34. Maximum turn-off current versus inductance (for each channel)(1)
A
B
C
)!
,M(
'!0'#&4
A: Tjstart = 150 °C single pulse
B: Tjstart = 100 °C repetitive pulse
C: Tjstart = 125 °C repetitive pulse
9,1,/
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1. Values are generated with RL = 0 Ω.
In case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse must not exceed
the temperature specified above for curves A and B.
28/37
Doc ID 15609 Rev 3
VN5E160AS-E
Package and PCB thermal data
4
Package and PCB thermal data
4.1
SO-8 thermal data
Figure 35. SO-8 PC board(1)
("1($'5
1. Layout condition of Rth and Zth measurements (PCB: FR4 area = 4.8 mm x 4.8 mm,
PCB thickness = 2 mm, Cu thickness = 35 µm, Copper areas: from minimum pad lay-out to 2 cm2).
Figure 36. Rthj-amb vs PCB copper area in open box free air condition
RTHj_amb(°C/W)
110
100
90
80
70
60
0
0.5
1
1.5
2
2.5
PCB Cu heatsink area (cm^2)
Doc ID 15609 Rev 3
29/37
Package and PCB thermal data
VN5E160AS-E
Figure 37. SO-8 thermal impedance junction ambient single pulse
ZTH (°C/W)
1000
Footprint
100
2 cm2
10
1
0.1
0.0001
0.001
0.01
0.1
1
Time (s)
10
100
1000
Equation 5: pulse calculation formula
Z
TH δ
= R
TH
⋅δ+Z
THtp
(1 – δ)
where δ = tP/T
Figure 38. Thermal fitting model of an HSD in SO-8(1)
*$3*&)7
1. The fitting model is a semplified thermal tool and is valid for transient evolutions where the embedded
protections (power limitation or thermal cycling during thermal shutdown) are not triggered.
30/37
Doc ID 15609 Rev 3
VN5E160AS-E
Table 15.
Package and PCB thermal data
Thermal parameters
Area/island (cm2)
Footprint
R1 (°C/W)
1.2
R2 (°C/W)
6
R3 (°C/W)
3.5
R4 (°C/W)
21
R5 (°C/W)
16
R6 (°C/W)
58
C1 (W.s/°C)
0.0008
C2 (W.s/°C)
0.0016
C3 (W.s/°C)
0.0075
C4 (W.s/°C)
0.045
C5 (W.s/°C)
0.35
C6 (W.s/°C)
1.05
Doc ID 15609 Rev 3
2
28
25
31/37
Package and packing information
VN5E160AS-E
5
Package and packing information
5.1
ECOPACK®
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
5.2
Package mechanical data
Figure 39. SO-8 package dimensions
6
H
E
H
D
E
$
D
&
F
D
/
(
'
0
)
("1($'5
32/37
Doc ID 15609 Rev 3
VN5E160AS-E
Package and packing information
Table 16.
SO-8 mechanical data
mm.
Dim.
Min.
Typ.
A
a1
Max.
1.75
0.1
0.25
a2
1.65
a3
0.65
0.85
b
0.35
0.48
b1
0.19
0.25
C
0.25
0.5
c1
45 (typ.)
D
4.8
5
E
5.8
6.2
e
1.27
e3
3.81
F
3.8
4
L
0.4
1.27
M
0.6
S
L1
8 (max.)
0.8
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Package and packing information
5.3
VN5E160AS-E
Packing information
Figure 40. SO-8 tube shipment (no suffix)
%
Base q.ty
Bulk q.ty
Tube length (± 0.5)
A
B
C (± 0.1)
&
$
100
2000
532
3.2
6
0.6
All dimensions are in mm.
("1($'5
Figure 41. SO-8 tape and reel shipment (suffix “TR”)
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5SERDIRECTIONOFFEED
'!0'#&4
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VN5E160AS-E
6
Order codes
Order codes
Table 17.
Device summary
Order codes
Package
SO-8
Tube
Tape and reel
VN5E160AS-E
VN5E160ASTR-E
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Revision history
7
VN5E160AS-E
Revision history
Table 18.
36/37
Document revision history
Date
Revision
Changes
28-Apr-2009
1
Initial release.
25-Jan-2010
2
Updated Table 10: Openload detection (8 V < VCC < 18 V).
25-May-2011
3
Table 9: Current sense (8 V < VCC < 18 V):
– tDSENSE2H: updated typical and maximum values
Doc ID 15609 Rev 3
VN5E160AS-E
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