STMICROELECTRONICS VND5025AK-E

VND5025AK-E
Double channel high side driver with analog
current sense for automotive applications
Features
Max transient supply voltage
VCC
41V
Operating voltage range
VCC 4.5 to 36V
Max On-State resistance (per ch.)
RON
25 mΩ
Current limitation (typ)
ILIMH
41 A
Off state supply current
IS
2 µA(1)
PowerSSO-24™
– Electrostatic discharge protection
Application
1. Typical value with all loads connected.
■
Main
– In-rush current active management by
power limitation
– Very low stand-by current
– 3.0V CMOS compatible input
– Optimized electromagnetic emission
– Very low electromagnetic susceptibility
– In compliance with the 2002/95/EC
European directive
– Package: ECOPACK®
■ Diagnostic functions
– Proportional load current sense
– High current sense precision for wide range
currents
– Current sense disable
– Thermal shutdown indication
– Very low current sense leakage
■ Protection
– Undervoltage shut-down
– Overvoltage clamp
– Load current limitation
– Self-limiting of fast thermal transients
– Protection against loss of ground and loss
of VCC
– Thermal shut down
– Reverse battery protection (see Application
schematic)
Table 1.
■
All types of resistive, inductive and capacitive
loads
■
Suitable as LED driver
Description
The VND5025AK-E is a monolithic device made
using STMicroelectronics VIPower M0-5
technology, intended for driving resistive or
inductive loads with one side connected to
ground, and suitable for driving LEDs. Active VCC
pin voltage clamp protects the device against low
energy spikes (see ISO7637 transient
compatibility table). This device integrates an
analog current sense which delivers a current
proportional to the load current (according to a
known ratio) when CS_DIS is driven low or left
open. When CS_DIS is driven high, the
CURRENT SENSE pin is in a high impedance
condition. Output current limitation protects the
device in overload condition. In case of long
overload duration, the device limits the dissipated
power to safe level up to thermal shut-down
intervention. Thermal shut-down with automatic
restart allows the device to recover normal
operation as soon as fault condition disappears.
Device summary
Order codes
Package
PowerSSO-24™
April 2008
Tube
Tape and Reel
VND5025AK-E
VND5025AKTR-E
Rev 8
1/31
www.st.com
1
Contents
VND5025AK-E
Contents
1
Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2
Electrical specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3
2.1
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.2
Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.4
Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.1
4
6
2/31
3.1.1
Solution 1: resistor in the ground line (RGND only) . . . . . . . . . . . . . . . . 21
3.1.2
Solution 2: diode (DGND) in the ground line . . . . . . . . . . . . . . . . . . . . . 22
3.2
Load dump protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.3
MCU I/Os protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.4
Maximum demagnetization energy (VCC = 13.5V) . . . . . . . . . . . . . . . . . 23
Package and thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
4.1
5
GND protection network against reverse battery . . . . . . . . . . . . . . . . . . . 21
PowerSSO-24™ thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
5.1
ECOPACK® packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
5.2
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
5.3
Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
VND5025AK-E
List of tables
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
Table 10.
Table 11.
Table 12.
Table 13.
Table 14.
Table 15.
Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pin functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Suggested connections for unused and N.C. pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Power section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Switching (VCC = 13V; Tj = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Logic input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Protection and diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Current sense (8V < VCC < 16V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Truth table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Electrical transient requirements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Thermal parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
PowerSSO-24™ mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
3/31
List of figures
VND5025AK-E
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Figure 11.
Figure 12.
Figure 13.
Figure 14.
Figure 15.
Figure 16.
Figure 17.
Figure 18.
Figure 19.
Figure 20.
Figure 21.
Figure 22.
Figure 23.
Figure 24.
Figure 25.
Figure 26.
Figure 27.
Figure 28.
Figure 29.
Figure 30.
Figure 31.
Figure 32.
Figure 33.
Figure 34.
4/31
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Configuration diagram (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Current sense delay characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Delay response time between rising edge of ouput current and rising edge of Current Sense
(CS enabled) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Switching characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
IOUT/ISENSE vs IOUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Maximum current sense ratio drift vs load current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Output voltage drop limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Off state output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
High level input current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Input clamp voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Input high level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Input low level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Input hysteresis voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
On state resistance vs Tcase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
On state resistance vs VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Undervoltage shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
ILIMH vs Tcase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Turn-On voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Turn-Off voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
CS_DIS high level voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
CS_DIS low level voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
CS_DIS clamp voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Application schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Maximum turn-Off current versus inductance (for each channel) . . . . . . . . . . . . . . . . . . . . 23
PowerSSO-24™ PC board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Rthj-amb vs PCB copper area in open box free air condition ( one channel ON). . . . . . . . 24
PowerSSO-24™ thermal impedance junction to ambient single pulse (one channel ON) . 25
Thermal fitting model of a double channel HSD in PowerSSO-24™ . . . . . . . . . . . . . . . . . 25
PowerSSO-24™ package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
PowerSSO-24™ tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
PowerSSO-24™ tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
VND5025AK-E
1
Block diagram and pin description
Block diagram and pin description
Figure 1.
Block diagram
Vcc
UNDERVOLTAGE
VCC
CLAMP
OUTPUT1
PwCLAMP 1
GND
CURRENT
SENSE1
DRIVER 1
ILIM 1
INPUT1
LOGIC
VDSLIM 1
PwrLIM 1
PwCLAMP 2
DRIVER 2
OUTPUT2
ILIM 2
OVERTEMP. 1
INPUT2
IOUT1
VDSLIM 2
CURRENT
SENSE2
K1
OVERTEMP. 2
IOUT2
K2
PwrLIM 2
CS_DIS
Table 2.
Pin functions
Name
VCC
OUTPUT1,2
GND
INPUT1,2
Function
Battery connection.
Power output.
Ground connection; must be reverse battery protected by an external
diode/resistor network.
Voltage controlled input pin with hysteresis, CMOS compatible; controls
output switch state.
CURRENT SENSE1,2
Analog current sense pin; delivers a current proportional to the load
current.
CS_DIS
Active high CMOS compatible pin to disable the current sense pin.
5/31
Block diagram and pin description
Figure 2.
VND5025AK-E
Configuration diagram (top view)
VCC
GND
N.C.
INPUT2
N.C.
INPUT1
N.C.
CURRENT SENSE1
N.C.
CURRENT SENSE2
CS_DIS.
VCC
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
OUTPUT2
OUTPUT2
OUTPUT2
OUTPUT2
OUTPUT2
OUTPUT2
OUTPUT1
OUTPUT1
OUTPUT1
OUTPUT1
OUTPUT1
OUTPUT1
TAB = VCC
Table 3.
Suggested connections for unused and N.C. pins
Connection / Pin
Current Sense
N.C.
Output
Input
CS_DIS
Floating
N.R.(1)
X
X
X
X
To Ground
Through 1kΩ resistor
X
N.R.
Through 10kΩ
resistor
Through 10kΩ
resistor
1. Not recommended.
6/31
VND5025AK-E
2
Electrical specification
Electrical specification
Figure 3.
Current and voltage conventions
IS
VCC
ICSD
VCSD
CS_DIS
OUTPUT1
INPUT1
CURRENT
SENSE1
VCC
VOUT1
ISENSE1
IIN1
VIN1
VF
IOUT1
IIN2
IOUT2
VSENSE1
OUTPUT2
INPUT2
ISENSE2
VIN2
VOUT2
CURRENT
SENSE2
GND
VSENSE2
IGND
Note:
VFn = VOUTn - VCC during reverse battery condition.
2.1
Absolute maximum ratings
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to the conditions in table below for extended
periods may affect device reliability. Refer also to the STMicroelectronics SURE Program
and other relevant quality document.
Table 4.
Absolute maximum ratings
Symbol
Parameter
Value
VCC
DC supply voltage
41
-VCC
Reverse DC supply voltage
0.3
-IGND
DC reverse ground pin current
200
IOUT
DC output current
- IOUT
Reverse DC output current
IIN
ICSD
Unit
V
mA
Internally limited
A
24
DC input current
-1 to 10
DC current sense disable input current
-ICSENSE
DC reverse CS pin current
VCSENSE
Current sense maximum voltage
mA
200
VCC - 41 to +VCC
V
7/31
Electrical specification
Table 4.
VND5025AK-E
Absolute maximum ratings (continued)
Symbol
Unit
140
mJ
Maximum switching energy (single pulse)
(L = 0.8mH; RL = 0Ω; Vbat = 13.5V; Tjstart = 150°C;
IOUT = IlimL(Typ.) )
VESD
Electrostatic discharge
(Human Body Model: R = 1.5kΩ; C = 100pF)
- Input
- Current Sense
- CS_DIS
- Output
- VCC
4000
2000
4000
5000
5000
V
V
V
V
V
VESD
Charge device model (CDM-AEC-Q100-011)
750
V
Tstg
Junction operating temperature
-40 to 150
Storage temperature
-55 to 150
°C
Thermal data
Table 5.
Symbol
Thermal data
Parameter
Rthj-case Thermal resistance junction-case (MAX) (with one channel ON)
Rthj-amb Thermal resistance junction-ambient (MAX)
8/31
Value
EMAX
Tj
2.2
Parameter
Max Value
Unit
1.35
°C/W
See Figure 29
VND5025AK-E
2.3
Electrical specification
Electrical characteristics
8V<VCC<36V; -40°C<Tj<150°C, unless otherwise specified.
Table 6.
Power section
Symbol
Parameter
VCC
Operating supply voltage
VUSD
Undervoltage shutdown
Test conditions
Min. Typ. Max. Unit
4.5
Undervoltage shut-down
VUSDhyst
hysteresis
RON
Vclamp
IS
IL(off)
VF
On state
resistance(1)
Clamp voltage
Supply current
Off state output current(1)
Output - VCC diode
voltage(1)
13
36
3.5
4.5
V
0.5
IOUT = 3A; Tj = 25°C
25
IOUT = 3A; Tj = 150°C
50
IOUT = 3A; VCC = 5V; Tj = 25°C
35
IS = 20 mA
41
Off State; VCC = 13V; Tj = 25°C;
VIN = VOUT = VSENSE = VCSD = 0V
On State; VCC = 13V;
VIN = 5V; IOUT = 0A
VIN = VOUT = 0V;
VCC = 13V; Tj = 25°C
0
VIN = VOUT = 0V;
VCC = 13V; Tj = 125°C
0
mΩ
46
52
V
2(2)
5(2)
µA
3
6
mA
0.01
3
µA
-IOUT = 4A; Tj = 150°C
5
0.7
V
1. For each channel.
2. PowerMOS leakage included.
Table 7.
Symbol
Switching (VCC = 13V; Tj = 25°C)
Parameter
td(on)
Turn-On delay time
td(off)
Turn-Off delay time
(dVOUT/dt)on Turn-On voltage slope
(dVOUT/dt)off Turn-Off voltage slope
WON
Switching energy losses
during tWON
WOFF
Switching energy losses
during tWOFF
Test conditions
RL = 4.3Ω
(see Figure 6)
Min.
Typ.
Max. Unit
35
µs
50
See Figure 21
RL = 4.3Ω
RL = 4.3Ω
(see Figure 6)
V/µs
See Figure 22
0.45
mJ
0.35
9/31
Electrical specification
Table 8.
Symbol
VND5025AK-E
Logic input
Parameter
VIL
Input low level voltage
IIL
Low level input current
VIH
Input high level voltage
IIH
High level input current
VI(hyst)
Input hysteresis voltage
VICL
ICSDL
Low level CS_DIS current
VCSDH
CS_DIS high level voltage
ICSDH
High level CS_DIS current
VCSD(hyst)
CS_DIS hysteresis voltage
Symbol
Unit
0.9
V
µA
2.1
V
10
0.25
IIN = 1mA
5.5
7
V
-0.7
0.9
VCSD = 0.9V
1
µA
2.1
V
VCSD = 2.1V
10
µA
7
V
Max.
Unit
0.25
ICSD = 1mA
5.5
-0.7
Parameter
ILIML
TTSD
Shutdown temperature
Test conditions
VCC = 13V
Min.
Typ.
29
41
57
5V < VCC < 36V
TR
Reset temperature
TRS
Thermal reset of STATUS
A
VCC = 13V;
TR < Tj < TTSD
16
150
175
TRS + 1
TRS + 5
200
°C
135
Thermal hysteresis
(TTSD-TR)
7
Turn-Off output voltage
clamp
IOUT = 2A;
VIN = 0;
L = 6mH
Output voltage drop
limitation
IOUT = 0.20.1A;
Tj = -40°C to +150°C
(see Figure 9)
VCC - 41 VCC - 46 VCC - 52
V
25
mV
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
10/31
µA
Protection and diagnostics(1)
Short circuit current
during thermal cycling
VON
Max.
1
ICSD = -1mA
DC short circuit current
VDEMAG
Typ.
VIN = 2.1V
CS_DIS clamp voltage
ILIMH
THYST
Min.
IIN = -1mA
CS_DIS low level voltage
Table 9.
VIN = 0.9V
Input clamp voltage
VCSDL
VCSCL
Test conditions
VND5025AK-E
Electrical specification
Table 10.
Symbol
Current sense (8V < VCC < 16V)
Parameter
Test conditions
Min. Typ. Max. Unit
KLED
IOUT/ISENSE
IOUT = 0.05A; VSENSE = 0.5V; VCSD = 0V;
1450 3300 5180
Tj = -40°C to 150°C
K0
IOUT/ISENSE
IOUT = 0.5 A; VSENSE = 0.5V; VCSD = 0V;
1720 3020 4360
Tj = -40°C to 150°C
Current Sense
ratio drift
IOUT = 0.5A; VSENSE = 0.5V; VCSD = 0V;
Tj = -40°C to 150°C
IOUT/ISENSE
IOUT = 2A; VSENSE = 4V;
VCSD = 0V;
Tj = -40°C to 150°C
Tj = 25°C to 150°C
Current Sense
ratio drift
IOUT = 2A; VSENSE = 4V;
VCSD = 0V;
Tj = -40°C to 150°C
IOUT/ISENSE
IOUT = 3A; VSENSE = 4V;
VCSD = 0V;
Tj = -40°C to 150°C
Tj = 25°C to150°C
Current Sense
ratio drift
IOUT = 3A; VSENSE = 4V; VCSD = 0V;
Tj = -40°C to 150°C
IOUT/ISENSE
IOUT = 10A; VSENSE = 4V;
VCSD = 0V;
Tj = -40°C to 150°C
Tj = 25°C to 150°C
Current Sense
ratio drift
IOUT = 10A; VSENSE = 4V; VCSD = 0V;
Tj = -40°C to 150°C
dK0/K0(1)
K1
dK1/K1
(1)
K2
dK2/K2(1)
K3
dK3/K3(1)
-12
+12
%
1940 2810 3740
2230 2810 3390
-10
+10
%
2250 2790 3450
2400 2790 3180
-7
+7
%
2610 2760 2970
2650 2760 2870
-4
+4
%
IOUT = 0A; VSENSE = 0V;
VCSD = 5V; VIN = 0V; Tj = -40°C to 150°C
VCSD = 0V; VIN = 5V; Tj = -40°C to 150°C
0
0
1
2
µA
µA
IOUT = 2A; VSENSE = 0V;
VCSD = 5V; VIN = 5V; Tj = -40°C to 150°C
0
1
µA
IOL
Openload On
state current
detection
threshold
VIN = 5V, ISENSE= 5 µA
5
30
mA
VSENSE
Max analog
Sense output
voltage
IOUT = 3 A; VCSD = 0V
5
VSENSEH
Analog Sense
output voltage in
VCC = 13V; RSENSE = 3.9kΩ
overtemperature
condition
ISENSE0
Analog Sense
leakage current
V
9
11/31
Electrical specification
Table 10.
VND5025AK-E
Current sense (8V < VCC < 16V) (continued)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Analog Sense
output current in
VCC = 13V; VSENSE = 5V
overtemperature
condition
8
tDSENSE1H
Delay response V
< 4V, 0.5 < I
< 10A
time from falling I SENSE= 90% of I OUT
SENSE
SENSEMAX
edge of CS_DIS
(see Figure 4)
pin
50
100
tDSENSE1L
Delay response V
< 4V, 0.5 < I
< 10A
time from rising I SENSE= 10% of I OUT
SENSEMAX
edge of CS_DIS SENSE
(see Figure 4)
pin
5
20
tDSENSE2H
Delay response
time from rising
edge of INPUT
pin
70
300
ISENSEH
Delay response
time between
rising edge of
∆tDSENSE2H
output current
and rising edge
of current sense
tDSENSE2L
Delay response
time from falling
edge of INPUT
pin
VSENSE < 4V, 0.5 < IOUT < 10A
ISENSE = 90% of ISENSEMAX
(see Figure 4)
µs
VSENSE < 4V,
ISENSE = 90% of ISENSEMAX,
IOUT = 90% of IOUTMAX, IOUTMAX = 3A
(see Figure 5)
VSENSE < 4V, 0.5 < IOUT < 10A
ISENSE = 10% of ISENSEMAX
(see Figure 4)
200
100
1. Parameter guaranteed by design; it is not tested.
Figure 4.
Current sense delay characteristics
INPUT
CS_DIS
LOAD CURRENT
SENSE CURRENT
tDSENSE2H
12/31
tDSENSE1L
mA
tDSENSE1H
tDSENSE2L
250
VND5025AK-E
Electrical specification
Figure 5.
Delay response time between rising edge of ouput current and rising
edge of Current Sense (CS enabled)
VIN
∆tDSENSE2H
t
IOUT
IOUTMAX
90% IOUTMAX
t
ISENSE
ISENSEMAX
90% ISENSEMAX
t
Figure 6.
Switching characteristics
tWoff
tWon
VOUT
90%
80%
dVOUT/dt(off)
dVOUT/dt(on)
tr
tf
10%
t
INPUT
td(on)
td(off)
t
13/31
Electrical specification
Figure 7.
VND5025AK-E
IOUT/ISENSE vs IOUT (see Table 10 for details)
Iout / Isense
4500
4000
max Tj = -40 °C to 150 °C
3500
3000
max Tj = 25 °C to 150 °C
typical value
min Tj = 25 °C to 150 °C
2500
2000
min Tj = -40 °C to 150 °C
1500
1000
2
4
6
8
10
IOUT (A)
Figure 8.
Maximum current sense ratio drift vs load current(a)
dk/k(%)
15
10
5
0
-5
-10
-15
2
3
4
5
6
IOUT (A)
a. Parameter guaranteed by design; it is not tested.
14/31
7
8
9
10
VND5025AK-E
Table 11.
Electrical specification
Truth table
Conditions
Input
Output
Sense (VCSD = 0V)(1)
L
L
0
H
H
Nominal
Normal operation
L
Overtemperature
0
L
H
VSENSEH
L
Undervoltage
L
0
H
L
Short circuit to GND (RSC ≤10mΩ)
0
L
H
0 if Tj < TTSD
VSENSEH if Tj > TTSD
L
Short circuit to VCC
0
H
H
Negative output voltage clamp
L
< Nominal
L
0
1. If the VCSD is high, the SENSE output is at a high impedance; its potential depends on leakage currents
and external circuit.
Figure 9.
Output voltage drop limitation
VCC - VOUT
Tj = 150oC
Tj = 25oC
Tj = -40oC
Von
Von/Ron(T)
IOUT
15/31
Electrical specification
Table 12.
VND5025AK-E
Electrical transient requirements
Burst cycle/pulse
repetition time
IV
Number of
pulses or
test times
Min.
Max.
-75V
-100V
5000 pulses
0.5s
5s
2 ms, 10Ω
2a
+37V
+50V
5000 pulses
0.2s
5s
50µs, 2Ω
3a
-100V
-150V
1h
90ms
100ms
0.1µs, 50Ω
3b
+75V
+100V
1h
90ms
100ms
0.1µs, 50Ω
4
-6V
-7V
1 pulse
100ms, 0.01Ω
5b(2)
+65V
+87V
1 pulse
400ms, 2Ω
Test levels(1)
ISO 7637-2:
2004(E)
Test pulse
III
1
ISO 7637-2:
2004E
Test pulse
III
VI
1
C
C
2a
C
C
3a
C
C
3b
C
C
4
C
C
5b(2)
C
C
Class
Test level results
Contents
C
All functions of the device performed as designed after exposure to disturbance.
E
One or more functions of the device did not perform as designed after exposure to
disturbance and cannot be returned to proper operation without replacing the device.
1. The above test levels must be considered referred to VCC = 13.5V except for pulse 5b.
2. Valid in case of external load dump clamp: 40V maximum referred to ground.
16/31
Delays and
Impedance
VND5025AK-E
Electrical specification
Figure 10. Waveforms
NORMAL OPERATION
INPUT
CS_DIS
LOAD CURRENT
SENSE CURRENT
UNDERVOLTAGE
VUSDhyst
VCC
VUSD
INPUT
CS_DIS
LOAD CURRENT
SENSE CURRENT
SHORT TO VCC
INPUT
CS_DIS
LOAD VOLTAGE
LOAD CURRENT
SENSE CURRENT
< Nominal
< Nominal
OVERLOAD OPERATION
TR
Tj
TTSD
TRS
INPUT
CS_DIS
ILIMH
ILIML
LOAD CURRENT
VSENSEH
SENSE CURRENT
Current
limitation
Power
limitation
Thermal cycling
SHORTED LOAD
NORMAL LOAD
17/31
Electrical specification
2.4
VND5025AK-E
Electrical characteristics curves
Figure 11. Off state output current
Figure 12. High level input current
Iih(uA)
Iloff (uA)
0.5
5
0.45
4.5
Off State
Vcc=13V
Vin=Vout=0V
0.4
0.35
Vin=2.1V
4
3.5
0.3
3
0.25
2.5
0.2
2
0.15
1.5
0.1
1
0.05
0.5
0
0
-50
-25
0
25
50
75
100
125
150
-50
175
-25
0
25
50
75
100
125
150
175
100
125
150
175
Tc (°C )
Tc (°C )
Figure 13. Input clamp voltage
Figure 14. Input high level
Vicl (V)
Vih (V)
7
4
6.75
3.5
Iin=1mA
6.5
3
6.25
2.5
6
2
5.75
1.5
5.5
1
5.25
0.5
5
0
-50
-25
0
25
50
75
100
125
150
175
-50
-25
0
25
Tc (°C )
75
Tc (°C )
Figure 15. Input low level
Figure 16. Input hysteresis voltage
Vil (V)
Vhyst (V)
2
1
1.8
0.9
1.6
0.8
1.4
0.7
1.2
0.6
1
0.5
0.8
0.4
0.6
0.3
0.4
0.2
0.2
0.1
0
0
-50
-25
0
25
50
75
Tc (°C )
18/31
50
100
125
150
175
-50
-25
0
25
50
75
Tc (°C )
100
125
150
175
VND5025AK-E
Electrical specification
Figure 17. On state resistance vs Tcase
Figure 18. On state resistance vs VCC
R on (mOhm)
R on (mOhm)
100
80
90
70
Iout=3A
Vcc=13V
80
60
70
50
60
50
40
40
Tc=150°C
30
Tc= 125°C
20
Tc= 25°C
Tc= -40°C
30
20
10
10
0
0
-50
-25
0
25
50
75
100
125
150
175
0
5
10
15
Tc (°C )
20
25
30
35
40
125
150
175
150
175
Vcc (V)
Figure 19. Undervoltage shutdown
Figure 20. ILIMH vs Tcase
Vusd (V)
Ilimh (A)
16
100
90
14
Vcc=13V
80
12
70
10
60
50
8
40
6
30
4
20
2
10
0
0
-50
-25
0
25
50
75
100
125
150
175
-50
-25
0
25
50
75
100
Tc (°C)
Tc (°C )
Figure 21. Turn-On voltage slope
Figure 22. Turn-Off voltage slope
(dVout/dt)on (V/ms)
(dVout/dt)off (V/ms)
1000
1000
900
900
Vcc=13V
Rl=4.3Ohm
800
Vcc=13V
Rl=4.3Ohm
800
700
700
600
600
500
500
400
400
300
300
200
200
100
100
0
0
-50
-25
0
25
50
75
Tc (°C )
100
125
150
175
-50
-25
0
25
50
75
100
125
Tc (°C )
19/31
Electrical specification
VND5025AK-E
Figure 23. CS_DIS high level voltage
Vcsdh (V)
Vcsdl (V)
4
4
3.5
3.5
3
3
2.5
2.5
2
2
1.5
1.5
1
1
0.5
0.5
0
0
-50
-25
0
25
50
75
100
125
150
175
Tc (°C )
Vcsdcl (V)
8
7.5
Icsd=1mA
7
6.5
6
5.5
5
4.5
4
-50
-25
0
25
50
75
Tc (°C )
-50
-25
0
25
50
75
Tc (°C )
Figure 25. CS_DIS clamp voltage
20/31
Figure 24. CS_DIS low level voltage
100
125
150
175
100
125
150
175
VND5025AK-E
3
Application information
Application information
Figure 26. Application schematic
+5V
VCC
Rprot
CS_DIS
Dld
µC
Rprot
INPUT
OUTPUT
Rprot
CURRENT SENSE
GND
CEXT
RSENSE
VGND
RGND
DGND
Note:
Channel 2 has the same internal circuit as channel 1.
3.1
GND protection network against reverse battery
This section provides two solutions for implementing a ground protection network against
reverse battery.
3.1.1
Solution 1: resistor in the ground line (RGND only)
This first solution can be used with any type of load.
The following formulas indicate how to dimension the RGND resistor:
1.
RGND ≤600mV / (IS(on)max)
2.
RGND ≥ (-VCC) / (-IGND)
where -IGND is the DC reverse ground pin current and can be found in the absolute
maximum rating section of the device datasheet.
Power Dissipation in RGND (when VCC < 0 during reverse battery situations) is:
PD = (-VCC)2 / RGND
This resistor can be shared among several different HSDs. Please note that the value of this
resistor is calculated with formula (1), where IS(on)max becomes the sum of the maximum onstate currents of the different devices.
Please note that if the microprocessor ground is not shared by the device ground, the RGND
produces a shift (IS(on)max * RGND) in the input thresholds and the status output values. This
21/31
Application information
VND5025AK-E
shift varies depending on how many devices are ON in the case of several high-side drivers
sharing the same RGND.
If the calculated power dissipation leads to a large resistor or several devices have to share
the same resistor, then ST suggests to utilize the following Solution 2.
3.1.2
Solution 2: diode (DGND) in the ground line
If the device drives an inductive load, insert a resistor (RGND = 1kΩ) in parallel to DGND.
This small signal diode can be safely shared among several different HSDs. Also in this
case, the presence of the ground network produces a shift (j600mV) in the input threshold
and in the status output values if the microprocessor ground is not common to the device
ground. This shift does not vary if more than one HSD shares the same diode/resistor
network.
3.2
Load dump protection
Dld is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds the
VCC maximum DC rating. The same applies if the device is subject to transients on the VCC
line that are greater than the ones shown in the ISO 7637-2:2004E table.
3.3
MCU I/Os protection
If a ground protection network is used and negative transients are present on the VCC line,
the control pins are pulled negative. ST suggests to insert an in-line resistor (Rprot) to
prevent the µC I/Os pins from latch-up.
The value of these resistors is a compromise between the leakage current of µC and the
current required by the HSD I/Os (input levels compatibility) with the latch-up limit of µC
I/Os.
-VCCpeak/Ilatchup ≤Rprot ≤(VOHµC-VIH-VGND) / IIHmax
Calculation example:
For VCCpeak = -100V and Ilatchup ≥ 20mA; VOHµC ≥ 4.5V
5kΩ ≤Rprot ≤180kΩ
Recommended values: Rprot = 10kΩ, CEXT = 10nF.
22/31
VND5025AK-E
3.4
Application information
Maximum demagnetization energy (VCC = 13.5V)
Figure 27. Maximum turn-Off current versus inductance (for each channel)
100
A
B
C
I (A)
10
1
0,1
1
L (mH)
10
100
A: Tjstart = 150°C single pulse
B: Tjstart = 100°C repetitive pulse
C: Tjstart = 125°C repetitive pulse
VIN, IL
Demagnetization
Demagnetization
Demagnetization
t
Note:
Values are generated with RL = 0 Ω.
In case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse
must not exceed the temperature specified above for curves A and B.
23/31
Package and thermal data
VND5025AK-E
4
Package and thermal data
4.1
PowerSSO-24™ thermal data
Figure 28. PowerSSO-24™ PC board
Note:
Layout condition of Rth and Zth measurements (PCB: Double layer, Thermal Vias, FR4
area = 77mm x 86mm, PCB thickness = 1.6mm, Cu thickness = 70µm (front and back side),
Copper areas: from minimum pad layout to 8cm2).
Figure 29. Rthj-amb vs PCB copper area in open box free air condition ( one channel
ON)
RTHj_amb(°C/W)
55
50
45
40
35
30
0
2
4
6
PCB Cu heatsink area (cm^2)
24/31
8
10
VND5025AK-E
Package and thermal data
Figure 30. PowerSSO-24™ thermal impedance junction to ambient single pulse (one
channel ON)
ZTH (°C/W)
1000
100
Footprint
2 cm2
8 cm2
10
1
0.1
0.0001
0.001
0.01
0.1
1
Time (s)
10
100
1000
Equation 1: pulse calculation formula
Z THδ = R TH ⋅ δ + Z THtp ( 1 – δ)
where δ = t p ⁄ T
Figure 31. Thermal fitting model of a double channel HSD in PowerSSO-24™(b)
b. The fitting model is a semplified thermal tool and is valid for transient evolutions where the embedded
protections (power limitation or thermal cycling during thermal shutdown) are not triggered.
25/31
Package and thermal data
Table 13.
26/31
VND5025AK-E
Thermal parameters
Area/Island (cm2)
Footprint
R1 (°C/W)
0.28
R2 (°C/W)
0.9
R3 (°C/W)
6
R4 (°C/W)
7.7
R5 (°C/W)
2
8
9
9
8
R6 (°C/W)
28
17
10
R7 (°C/W)
0.28
R8 (°C/W)
0.9
C1 (W.s/°C)
0.001
C2 (W.s/°C)
0.003
C3 (W.s/°C)
0.025
C4 (W.s/°C)
0.75
C5 (W.s/°C)
1
4
9
C6 (W.s/°C)
2.2
5
17
C7 (W.s/°C)
0.001
C8 (W.s/°C)
0.003
VND5025AK-E
Package and packing information
5
Package and packing information
5.1
ECOPACK® packages
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. ECOPACK® packages are lead-free. The category of Second Level Interconnect
is marked on the package and on the inner box label, in compliance with JEDEC Standard
JESD97. The maximum ratings related to soldering conditions are also marked on the inner
box label.
ECOPACK is an ST trademark. ECOPACK specifications are available at www.st.com.
5.2
Package mechanical data
Figure 32. PowerSSO-24™ package dimensions
27/31
Package and packing information
Table 14.
VND5025AK-E
PowerSSO-24™ mechanical data
Millimeters
Symbol
Min.
Typ.
A
2.15
2.47
A2
2.15
2.40
a1
0
0.075
b
0.33
0.51
c
0.23
0.32
D
10.10
10.50
E
7.4
7.6
e
0.8
e3
8.8
G
0.1
G1
0.06
H
10.1
10.5
h
0.4
k
L
5°
0.55
N
28/31
Max.
0.85
10°
X
4.1
4.7
Y
6.5
7.1
VND5025AK-E
5.3
Package and packing information
Packing information
Figure 33. PowerSSO-24™ tube shipment (no suffix)
Base Qty
Bulk Qty
Tube length (±0.5)
A
B
C (±0.1)
C
B
49
1225
532
3.5
13.8
0.6
All dimensions are in mm.
A
Figure 34. PowerSSO-24™ tape and reel shipment (suffix “TR”)
REEL DIMENSIONS
Base Qty
Bulk Qty
A (max)
B (min)
C (±0.2)
F
G (+2 / -0)
N (min)
T (max)
1000
1000
330
1.5
13
20.2
24.4
100
30.4
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
Tape width
Tape Hole Spacing
Component Spacing
Hole Diameter
Hole Diameter
Hole Position
Compartment Depth
Hole Spacing
W
P0 (±0.1)
P
D (±0.05)
D1 (min)
F (±0.1)
K (max)
P1 (±0.1)
24
4
12
1.55
1.5
11.5
2.85
2
End
All dimensions are in mm.
Start
Top
cover
tape
No components Components
500mm min
No components
500mm min
Empty components pockets
sealed with cover tape.
User direction of feed
29/31
Revision history
6
VND5025AK-E
Revision history
Table 15.
30/31
Document revision history
Date
Revision
Changes
11-Apr-2006
1
Initial release
30-Mar-2007
2
Reformatted.
Table 4 on page 7: updated EMAX entries.
Table 6 on page 9 : updated VF test conditions.
Table 7 on page 9: set Tj condition to 25°C”
Table 10 on page 11: added dK1/K1, dK2/K2, dK3/K3, ∆tDSENSE2H ,
tDSENSE2H values and note.
Added Figure 5: Delay response time between rising edge of ouput
current and rising edge of Current Sense (CS enabled) on page 13 .
Updated Figure 7: IOUT/ISENSE vs IOUT (see Table 10 for details)
on page 14 .
Added Figure 8: Maximum current sense ratio drift vs load current on
page 14 .
Table 12 on page 16: Updated Test Level values III and IV for test
pulse 5b and notes.
Added Section 3.4: Maximum demagnetization energy
(VCC = 13.5V) on page 24.
Added ECOPACK® packages information.
01-Jun-2007
3
Figure 31: Thermal fitting model of a double channel HSD in
PowerSSO-24™ : added note.
03-Jul-2007
4
Updated Figure 1: Block diagram and Figure 2: Configuration
diagram (top view).
24-Jul-2007
5
Updated Table 14: PowerSSO-24™ mechanical data.
12-Dec-2007
6
Updated Table 10: Current sense (8V < VCC < 16V) :
– added dK0/K0values
– changed dK3/K3 values from ± 3 to ± 4 %
– changed ∆tDSENSE2H value from 110 to 200 µs
– added IOL parameter
Updated Figure 8: Maximum current sense ratio drift vs load current
with new dK/K values.
12-Feb-2008
7
Corrected typing error in Table 10: Current sense (8V < VCC < 16V) :
changed IOL test condition from VIN = 0V to VIN = 5V.
10-Apr-2008
8
Corrected Figure 27: Maximum turn-Off current versus inductance
(for each channel).
VND5025AK-E
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33/33