JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors KSC2331 TO-92L TRANSISTOR NPN 1.EMITTER FEATURE Power dissipation PCM : 1 W Tamb=25 Collector current ICM : 0.7 A Collector-base voltage V(BR)CBO : 80 V Operating and storage junction temperature range TJ Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS Parameter Tamb=25 Symbol 2.COLLECTOR 3.BASE unless Test otherwise specified conditions MIN TYP MAX UNIT A 80 V Collector-base breakdown voltage V(BR)CBO Ic= 100 Collector-emitter breakdown voltage V(BR)CEO IC= 10mA , IB=0 60 V Emitter-base breakdown voltage V(BR)EBO IE= 10 A IC=0 8 V Collector cut-off current ICBO VCB=60V , IE=0 0.1 A Emitter cut-off current IEBO VEB=5V , IC=0 0.1 A DC current gain hFE VCE=2 V, IE=0 IC= 50mA 40 240 Collector-emitter saturation voltage VCE(sat) IC= 500m A, IB= 50mA 0.7 V Base-emitter voltage VBE(sat) IC= 500 mA, 1.2 V IB= 50mA Collector output capacitance Cob (VCB=10V IE=0,f=1MHz) Transition frequency fT VCE= 10 V, IC= 50mA 8 pF 30 MHz CLASSIFICATION OF hFE(1) Rank Range R O Y 40-80 70-140 120-240