Transys Electronics L I M I T E D TO-92L Plastic-Encapsulate Transistors 2SC1383 2SC1384 TRANSISTOR (NPN) TO-92L FEATURE Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: 1. EMITTER 1 W (Tamb=25℃) 2. COLLECTOR 3. BASE 1 A 2SC1383: 30 V 2SC1384: 50 V Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter unless otherwise specified) Symbol Collector-base breakdown voltage 2SC1383 Test conditions MIN MAX 30 UNIT V(BR)CBO Ic= 10µA , IE=0 V(BR)CEO IC=2mA , IB=0 V(BR)EBO IE= 10µA, IC=0 ICBO VCB=20V , IE=0 hFE(1) VCE=10 V, IC= 500mA 85 hFE(2) VCE=5 V, IC= 1A 50 Collector-emitter saturation voltage VCE(sat) IC= 500m A, IB=50mA 0.4 V Base-emitter saturation voltage VBE(sat) IC= 500mA , IB= 50mA 1.2 V fT VCE= 10 V, IC= 50mA 2SC1384 Collector-emitter breakdown voltage 2SC1383 2SC1384 Emitter-base breakdown voltage Collector cut-off current V 50 25 V 50 5 V 0.1 µA 340 DC current gain Transition frequency 100 MHz CLASSIFICATION OF hFE(1) Rank Range Q R S 85-170 120-240 170-340