MACROBIZES CO., LTD. TO-251 Plastic-Encapsulate Transistors 3DD13002 TRANSISTOR (NPN) TO-251 FEATURES Power dissipation PCM: 1.25 1. BASE W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range 3. EMITTER 1 2 3 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100µA, IE=0 600 V Collector-emitter breakdown voltage V(BR)CEO Ic=1mA, IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE= 100µA, IC=0 6 V Collector cut-off current ICBO VCB= 600V, IE=0 100 µA Emitter cut-off current IEBO VEB= 6V, IC=0 100 µA hFE(1) VCE= 10V, IC= 200 mA 9 hFE(2) VCE= 10V, IC=250 µA 5 Collector-emitter saturation voltage VCE(sat) IC=200mA, IB= 40 mA 0.8 V Base-emitter saturation voltage VBE(sat) IC=200mA, IB= 40 mA 1.1 V 40 DC current gain Transition frequency fT Fall time tf Storage time ts VCE=10V, Ic=100mA f =1MHz 5 MHz IC=1A, IB1=-IB2=0.2A VCC=100V 0.5 µs 2.5 µs CLASSIFICATION OF hFE(2) Rank Range 9-15 15-20 20-25 25-30 30-35 35-40