UTC-IC 2SB688

UTC 2SB688
PNP EPITAXIAL SILICON TRANSISTOR
HIGH POWER AMPLIFIER APPLICATION
FEATURES
* Complementary to 2SD718.
* Recommended for 45 ~ 50W Audio Frequency Amplifier
Output Stage.
1
TO-3P
1: BASE 2: COLLECTOR 3: EMITTER
*Pb-free plating product number: 2SB688L
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Collector Power Dissipation (TC=25℃)
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PC
TJ
TSTG
RATINGS
-120
-120
-5
-10
-1
80
150
-40 ~ +150
UNIT
V
V
V
A
A
W
℃
℃
ELECTRICAL CHARACTERISTICS
(Ta=25℃)
PARAMETER
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
SYMBOL
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE
fT
Cob
TEST CONDITIONS
VCB = -120V, IE = 0
VEB = -5V, IC = 0
IC = -50mA, IB= 0
VCE = -5V, IC = -1A
IC = -5A, IB = -0.5A
VCE = -5A, IC= -5A
VCE = -5A, IC= -1A
VCB = -10V, IE = 0, f=1MHz
MIN
TYP
-120
55
MAX
-10
-10
160
-2.5
-1.5
10
280
UNIT
µA
µA
V
V
V
MHz
pF
CLASSIFICATION OF hFE
RANK
RANGE
UTC
R
55 ~ 110
UNISONIC TECHNOLOGIES CO., LTD.
www.unisonic.com
O
80 ~ 160
1
QW-R214-007,A
UTC 2SB688
PNP EPITAXIAL SILICON TRANSISTOR
IC - VCE
-4
00
m
-8
COMMON EMITTER
TC=25℃
A
0m
-30
A
-200mA
-6
-100mA
-4
-50mA
IB= -20mA
-2
0mA
0
0
-2
-4
-6
-10
-8
--12
-14
COLLECTOR EMITTER VOLTAGE, VCE (V)
PC - Ta
100
(1)Ta=Tc
INFINITEHEATSINK
(2)300×300×2mm A1
HEAT SINK
(3)200×200×2mm A1
HEAT SINK
(4)100×100×2mm A1
HEAT SINK
(5)NO HEAT SINK
(1)
80
60
(2)
40
(3)
(4)
20
(5)
0
0
40
VCE(sat) - IC
160
200
240
-30
COMMON EMITTER
IC/IB=10
IC MAX. (PULSED)※
COLLECTOR CURRENT, IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE, VCE(sat) (V)
120
SAFE OPERATING AREA
-5
-3
80
AMBIENT TEMPERATURE, Ta (℃)
-1
-0.5
-0.3
TC
00
=1
℃
TC=25℃
-0.1
TC=-25 ℃
-0.05
-0.03
-0.01
IC MAX
-10 (CONTINUOUS)
DC
O
P
T C ER
=2 AT
5 ℃ IO
N
-5
-3
t=1ms※
t=10ms※
t=100ms※
t=500ms※
-1
-0.5
-0.3
※SINGLE NONREPETITIVE
PULSE TC=25℃
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE.
VCEO MAX
COLLECTOR CURRENT, I C (A)
-10
COLLECTOR POWER DISSIPATION, P C (W)
TYPICAL CHARACTERISTICS
-0.1
-0.01
-0.03
-0.1
-0.3
-1
-3
-10
-1
-3
-10
-30
-100
-300
COLLECTOR EMITTER VOLTAGE, VCE (V)
COLLECTOR CURRENT, IC (A)
hFE - IC
1K
COMMON EMITTER
VCE=-5V
DC CURRENT GAIN, hFE
500
300
TC=100℃
TC=25℃
TC= -25℃
100
50
30
10
-0.01
-0.03
-0.1
-0.3
-1
-3
-10
COLLECTOR CURRENT, IC (A)
UTC assum es no responsibility for equipm ent failures that result from using products at v alues that
exceed, ev en m om entarily, rated v alues (such as m axim um ratings, operating condition ranges, or
other param eters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, dev ices or system s where
m alfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The inform ation
presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate
and reliable and m ay be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO., LTD.
www.unisonic.com
2
QW-R214-007,A