JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors B772 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation 1. EMITTER PCM: 625 mW (Tamb=25℃) 2. COLLECTOR Collector current -3 A ICM: Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-100µA ,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -10 mA , IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE= -100µA, IC=0 -6 V Collector cut-off current ICBO VCB= -40 V, IE=0 -1 µA Collector cut-off current ICEO VCE=-30 V, IB=0 -10 µA Emitter cut-off current IEBO VEB=-6V, IC=0 -1 µA hFE(1) VCE= -2V, IC= -1A 60 hFE(2) VCE=-2V, IC= -100mA 32 Collector-emitter saturation voltage VCE(sat) IC=-2A, IB= -0.2A -0.5 V Base-emitter saturation voltage VBE(sat) IC=-2A, IB= -0.2A -1.5 V 400 DC current gain VCE= -5V, IC=-0.1A Transition frequency fT 50 MHz f = 10MHz CLASSIFICATION OF hFE(1) Rank Range R O Y GR 60-120 100-200 160-320 200-400