JIANGSU B772-TO-92

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
B772
TRANSISTOR (PNP)
TO-92
FEATURES
Power dissipation
1. EMITTER
PCM:
625
mW (Tamb=25℃)
2. COLLECTOR
Collector current
-3
A
ICM:
Collector-base voltage
-40
V
V(BR)CBO:
Operating and storage junction temperature range
3. BASE
1 2 3
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Symbol
unless otherwise specified)
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic=-100µA ,IE=0
-40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= -10 mA , IB=0
-30
V
Emitter-base breakdown voltage
V(BR)EBO
IE= -100µA, IC=0
-6
V
Collector cut-off current
ICBO
VCB= -40 V, IE=0
-1
µA
Collector cut-off current
ICEO
VCE=-30 V, IB=0
-10
µA
Emitter cut-off current
IEBO
VEB=-6V, IC=0
-1
µA
hFE(1)
VCE= -2V, IC= -1A
60
hFE(2)
VCE=-2V, IC= -100mA
32
Collector-emitter saturation voltage
VCE(sat)
IC=-2A, IB= -0.2A
-0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=-2A, IB= -0.2A
-1.5
V
400
DC current gain
VCE= -5V, IC=-0.1A
Transition frequency
fT
50
MHz
f = 10MHz
CLASSIFICATION OF hFE(1)
Rank
Range
R
O
Y
GR
60-120
100-200
160-320
200-400