UTC D45H2 PNP EXPITAXIAL SILICON TRANSISTOR PNP EXPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC D45H2 is a general purpose power application and switching. FEATURE 1 *Low Collector-Emitter Saturation Voltage VCE(sat)=-1v(MAX)@-15A *Fast Switching Speeds TO-220 1:BASE 2:COLLECTOR 3:EMITTER ABSOLUTE MAXIMUM RATINGS(Ta=25°C) PARAMETER Collector to Emitter Voltage Emitter To Base Voltage Collector Current(DC) Collector Dissipation(Tc=25°C) Collector Dissipation(Ta=25°C) Junction Temperature Storage Temperature SYMBOL VALUE UNIT VCEO VEBO IC Pc Pc Tj Tstg -30 -5 -10 50 1.67 150 -55 ~ +150 V V A W W °C °C *PW<=10mS,Duty Cycle<=50% ELECTRICAL CHARACTERISTICS(Ta=25°C) PARAMETER SYMBOL TEST CONDITIONS Collector Cutoff Current Emitter Cutoff current Collector Emitter Saturation Voltage Base Emitter Saturation Voltage DC Current Gain Current Gain Bandwidth Product Output Capacitance Turn On Time Storage Time Fall Time ICES IEBO VCE(SAT) VCE=Rated ; VCEO,VEB=0 VEB=-5V,Ic=0 IC=-10A,IB=-0.1A VBE(SAT) hFE1 FT CCB ton tstg tf IC=-10A,IB=-1A IC=-10A,VCE=-1V VCE=-10V,IC=-0.5A VCB=-10V,f=1MHZ Ic=-5A,IB=-0.5A IB=-0.5A UTC UNISONIC TECHNOLOGIES MIN TYP MAX UNIT -10 1 -1 µA µA V -1.5 V 100 40 230 135 500 100 MHZ PF nS nS nS CO. LTD 1 QW-R203-003,B UTC D45H2 PNP EXPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTION DC CURRENT GAIN 100 VCE = 1V TJ = 25℃ 50 45 DC CURRENT GAIN, h FE POWER DISSIPATION, P D (WATTS) POWER DERATING 40 35 30 25 20 15 10 5 0 0 125 75 100 50 TEMPERATURE, Tc (℃) 25 80 60 40 20 150 0.05 0.01 0.1 0.2 0.5 1 2 5 10 COLLECTOR CURRENT, I C (AMP) DC CURRENT GAIN "ON" VOLTAGES 5.0 VCE = 1V TJ = 25℃ 120 80 40 0 0.01 0.05 0.1 0.2 0.5 1 2 5 TJ = 25℃ 2.0 160 VOLTAGE, V (VOLTS) DC CURRENT CAIN, h FE 200 10 VBE(sat)@IC/IB =10 1.0 0.5 0.2 0.1 VCE(sat)@IC/IB =10 0.05 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 COLLECTOR CURRENT, I C (AMP) COLLECTOR CURRENT, I C (AMP) COLLECTOR CURRENT, I C (Amp) FORWARD BIAS SAFE OPERATING AREA TC<70℃ Duty Cycle<50% 20 10 5.0 DC 2.0 1.0 0.5 D45H1,2 D45H4,5 D45H7,8,9 D45H10,11,12 0.2 0.1 1 1μs 10μs 100μs 1ms 100 50 10 20 5 2 COLLECTOR EMITTER VOLTAGE, V CE (VOLTS) UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R203-003,B UTC D45H2 PNP EXPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R203-003,B