MITSUBISHI MGF1941AL

< Power GaAs FET >
MGF1941AL
Micro-X type plastic package
DESCRIPTION
The MGF1941AL power MES FET is designed for use in S to Ku band
power amplifiers.
Outline Drawing
FEATURES
High gain and High P1dB
P1dB=15dBm, Glp=10 dB (Typ.) @ f=12GHz
APPLICATION
Fig.1
S to Ku band low noise amplifiers
QUALITY GRADE
MITSUBISHI Proprietary
GG
Not to be reproduced or disclosed without
permission by Mitsubishi Electric
RECOMMENDED BIAS CONDITIONS
VDS=3V , ID=30mA
ORDERING INFORMATION
Tape & reel
4,000pcs/reel
RoHS COMPLIANT
MGF1941AL is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
Symbol
VGDO
Gate to drain voltage
VGSO
ID
Drain current
PT
Tch
Tstg
Parameter
Gate to source voltage
V(BR)GDO
IDSS
VGS(off)
P1dB
Glp
Gs
NFmin
Ratings
Unit
-5
V
-5
V
120
mA
Total power dissipation
300
mW
Channel temperature
175
C
Storage temperature
-65 to +150
C
ELECTRICAL CHARACTERISTICS
Symbol
(Ta=25C )
Parameter
(Ta=25C )
Test conditions
Gate to drain breakdown voltage
IG=-30A
Saturated drain current
VGS=0V,VDS=3V
VDS=3V,ID=300A
Gate to source cut-off voltage
Output power at 1dB gain
compression
Linear power gain
Associated gain
Minimum noise figure
VDS=3V, ID=30mA,
f=12GHz
VDS=3V, ID=30mA,
f=12GHz, Pin=-5dBm
VDS=3V, ID=10mA,
f=12GHz
Limits
Unit
MIN.
TYP.
MAX
-8
-15
--
V
35
60
120
mA
-0.3
-1.4
-3.5
V
11
15
--
dBm
7
10
--
dB
---
9
1.2
---
dB
dB
Note : P1B and Glp are tested with sampling inspection.
Gs/NFmin are not tested.
Publication Date : Mar., 2012
CSTG-14554
1
< Power GaAs FET >
MGF1941AL
Micro-X type plastic package
Fig.1
3.2±0.1
(0.30)
2.6±0.1
(0.30)
Bottom
0.5±0.1
(2.3)
(2.3)
aAA
②
(0.30)
②
0.65±0.1
J
3.2±0.1
(0.30)
①
2.6±0.1
Top
③
Unit : mm
2.2±0.1
1.35±0.2
Side
0.15±0.05
1.7±0.1
① Gate
② Source
③ Drain
(GD-32)
Publication Date : Mar., 2012
2
< Power GaAs FET >
MGF1941AL
Micro-X type plastic package
TYPICAL CHARACTERISTICS
(Ta=25°C)
I D vs. VDS
I D vs. VGS
100
100
Ta=25deg.C
VGS=-0.2V/STEP
90
80
DRAIN CURRENT ID(mA)
80
DRAIN CURRENT ID(mA)
Ta=25deg.C
VDS=3V
90
VGS=0V
70
60
50
40
30
20
10
70
60
50
40
30
20
10
0
0.0
1.0
2.0
3.0
4.0
0
-3.0
5.0
DRAIN TO SOURCE VOLTAGE VDS(V)
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
GATE TO SOURCE VOLTAGE VGS(V)
Po vs. Pin
NF , Gs vs. ID
4.0
12
3.5
10
3.0
8
2.5
6
2.0
4
Ta= 2 5 de g.C
VDS = 3 V
I D= 3 0 mA
f= 1 2 GHz
10
NF(dB)
Po (dBm )
15
5
f=12GHz
Vds=3V
Ids=10mA
0
1.5
-5
-15
-10
-5
0
5
10
2
1.0
15
0
0
Pin (dBm )
10
20
30
ID(mA)
Publication Date : Mar., 2012
3
40
50
Gs(dB)
20
< Power GaAs FET >
MGF1941AL
Micro-X type plastic package
S PARAMETERS
f
(GHz)
S11
Mag.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
0.981
0.933
0.862
0.780
0.694
0.610
0.547
0.499
0.480
0.480
0.505
0.548
0.588
0.633
0.670
0.722
0.761
0.788
Angle
S21
Mag.
Angle
S12
Mag.
-20.3
-40.4
-60.6
-81.1
-102.4
-124.3
-149.6
-174.0
162.9
142.0
123.1
106.4
90.2
76.4
62.2
53.0
41.1
30.8
5.081
4.936
4.742
4.509
4.265
3.982
3.689
3.389
3.117
2.904
2.720
2.569
2.393
2.277
2.142
1.968
1.799
1.614
159.6
140.0
120.8
102.2
84.0
66.6
49.0
32.7
17.6
3.5
-10.8
-25.2
-39.4
-53.3
-69.1
-84.2
-98.6
-113.4
0.016
0.031
0.045
0.056
0.066
0.073
0.079
0.083
0.087
0.091
0.098
0.107
0.113
0.122
0.131
0.135
0.140
0.143
(Conditions:VDS=3V,ID=30mA,Ta=25deg.C)
S22
K
MAG/MSG
Angle
Mag.
Angle
(dB)
78.2
67.1
56.7
47.1
38.0
30.2
22.2
14.8
9.4
5.7
1.6
-3.6
-10.5
-16.3
-24.9
-33.3
-40.8
-49.7
0.567
0.549
0.520
0.482
0.440
0.394
0.340
0.288
0.243
0.209
0.185
0.177
0.176
0.215
0.287
0.354
0.423
0.506
-11.2
-22.2
-32.9
-43.4
-53.8
-63.2
-76.0
-87.7
-100.4
-114.9
-135.0
-162.1
168.8
147.8
125.6
103.6
88.8
74.5
0.21
0.38
0.54
0.70
0.85
1.00
1.12
1.27
1.37
1.43
1.39
1.29
1.24
1.11
1.00
0.90
0.82
0.74
25.0
22.0
20.3
19.1
18.1
17.4
14.6
13.0
11.9
11.1
10.7
10.6
10.3
10.7
11.8
11.6
11.1
10.5
Measurement plane (2.6mm)
Recommended foot pattern;
RO4003C/Rogers (r=3.38, t=0.508mm)
Publication Date : Mar., 2012
4
< Power GaAs FET >
MGF1941AL
Micro-X type plastic package
S PARAMETERS
f
(GHz)
S11
Mag.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
0.988
0.955
0.907
0.845
0.776
0.698
0.629
0.570
0.535
0.522
0.534
0.568
0.604
0.642
0.673
0.724
0.761
0.787
Angle
S21
Mag.
Angle
S12
Mag.
-17.8
-35.7
-54.0
-73.0
-92.9
-113.8
-138.1
-161.9
174.6
153.1
132.8
114.5
97.1
82.1
67.1
57.1
44.9
34.2
3.647
3.602
3.549
3.478
3.394
3.266
3.101
2.904
2.706
2.535
2.382
2.249
2.091
1.981
1.844
1.685
1.531
1.364
161.6
143.8
125.9
108.0
90.2
72.6
54.1
37.0
21.0
5.8
-9.3
-24.4
-39.2
-53.6
-69.7
-84.9
-99.4
-114.1
0.019
0.038
0.054
0.069
0.081
0.090
0.096
0.098
0.097
0.094
0.095
0.099
0.101
0.107
0.114
0.118
0.122
0.126
(Conditions:VDS=3V,ID=10mA,Ta=25deg.C)
S22
K
MAG/MSG
Angle
Mag.
Angle
(dB)
77.8
66.0
54.5
43.2
32.1
21.8
11.1
1.1
-6.2
-10.7
-13.9
-17.3
-22.4
-25.9
-32.4
-39.5
-45.4
-53.4
0.625
0.609
0.581
0.544
0.498
0.445
0.384
0.325
0.272
0.234
0.211
0.207
0.212
0.250
0.322
0.386
0.450
0.528
-11.5
-23.0
-34.5
-46.1
-57.9
-69.2
-83.6
-97.2
-111.8
-127.8
-148.2
-173.7
159.9
140.7
120.7
99.9
85.7
72.0
0.16
0.29
0.41
0.54
0.66
0.81
0.95
1.12
1.29
1.45
1.51
1.46
1.44
1.32
1.20
1.06
0.96
0.86
22.8
19.8
18.1
17.0
16.2
15.6
15.1
12.6
11.2
10.3
9.8
9.6
9.2
9.3
9.4
10.0
11.0
10.3
Measurement plane (2.6mm)
Recommended foot pattern;
RO4003C/Rogers (r=3.38, t=0.508mm)
Publication Date : Mar., 2012
5
< Power GaAs FET >
MGF1941AL
Micro-X type plastic package
Keep safety first in your circuit designs!
 Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and
more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire ore property damage. Remember to give due
consideration to safety when making your circuit designs, with appropriate measures such as (i) placement
of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any
malfunction or mishap.
Notes regarding these materials
 These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
 Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any thirdparty’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit
application examples contained in these materials.
 All information contained in these materials, including product data, diagrams, charts, programs and
algorithms represents information on products at the time of publication of these materials, and are subject
to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons.
It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized
Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product
listed herein.
The information described here may contain technical in accuracies or typographical errors.
Mitsubishi Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from
these inaccuracies or errors.
Please also pay attention to information published by Mitsubishi Electric Corporation by various means,
including the Mitsubishi Semiconductor home page (http://www.mitsubishielectric.com/).
 When using any or all of the information contained in these materials, including product data, diagrams,
charts, programs, and algorithms, please be sure to evaluate all information as a total system before
making a final decision on the applicability of the information and products. Mitsubishi Electric Corporation
assumes no responsibility for any damage, liability or other loss resulting from the information contained
herein.
 Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or
system that is used under circumstances in which human life is potentially at stake. Please contact
Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when
considering the use of a product contained herein for any specific purposes, such as apparatus or systems
for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
 The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole
ore in part these materials.
 If these products or technologies are subject to the Japanese export control restrictions, they must be
exported under a license from the Japanese government and cannot be imported into a country other than
the approved destination.
Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country
of destination is prohibited.
 Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product
distributor for further details on these materials or the products contained therein.
© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : Mar., 2012
6