MITSUBISHI MGF0918A

< High-power GaAs FET (small signal gain stage) >
MGF0918A
L & S BAND / 0.5W
SMD non - matched
DESCRIPTION
The MGF0918A GaAs FET with an N-channel schottky
Gate, is designed for use UHF band amplifiers.
FEATURES
 High output power
Po=27dBm(TYP.) @f=1.9GHz,Pin=8dBm
 High power gain
Gp=20dB(TYP.) @f=1.9GHz
 High power added efficiency
add=45%(TYP.) @f=1.9GHz,Pin=8dBm
 Hermetic Package
APPLICATION
 For UHF Band power amplifiers
QUALITY
Fig.1
 GG
RECOMMENDED BIAS CONDITIONS
 Vds=10V
Delivery
 Ids=150mA
 Rg=1k
-01:Tape & Reel(1K), -03:Trai(50pcs)
Absolute maximum ratings
Symbol
(Ta=25C)
Ratings
Unit
-15
V
VGDO Gate to drain breakdown voltage
-15
V
ID
Drain current
400
mA
IGR
Reverse gate current
-1.2
mA
IGF
Forward gate current
5.0
mA
PT
Total power dissipation
3
W
Tch
Cannel temperature
175
C
Tstg
Storage temperature
-65 to +175
C
VGSO
Parameter
Gate to sourcebreakdown voltage
Electrical characteristics
Symbol
(Ta=25C)
Parameter
Test conditions
Limits
Unit
Min.
Typ.
Max.
-
300
400
mA
-1.0
-
-5.0
V
IDSS
Saturated drain current
VDS=3V,VGS=0V
VGS(off)
gm
Gate to source cut-off voltage
VDS=3V,ID=1.0mA
Transconductance
VDS=3V,ID=150mA
-
130
-
mS
Po
add
Output power
Power added Efficiency
VDS=10V,ID=150mA,f=1.9GHz
Pin=8dBm
25
-
27
35
-
dBm
%
GLP
Linear Power Gain
VDS=10V,ID=150mA,f=1.9GHz
18
20
-
dB
NF
Noise figure
-
1.0
-
dB
Rth(ch-c)
Thermal Resistance
-
35
50
C/W
*1:Channel to case /
*1
Vf Method
Above parameters, ratings, limits are subject to change.
Publication Date : Apr., 2011
1
< High-power GaAs FET (small signal gain stage) >
MGF0918A
L & S BAND / 0.5W
SMD non - matched
MGF0918A TYPICAL CHARACTERISTICS
Po,Gp,PAE vs.Pin
35
30
70
Vds=10V
Id(off)=150mA
f=1.9GHz
60
Po
25
Po(dBm)
20
40
PAE
15
30
Gp
10
20
5
10
0
-10
Gp(dB),PAE(%)
50
0
-5
0
5
10
15
Pin(dBm)
P i(S C L ) v s .P o (S C L ),IM 3
30
30
25
Po(SCL)(dBm)
20
20
Po
10
15
0
10
-10
5
-20
IM 3
0
-30
-5
-40
-1 0
-50
-1 5
-60
-2 0
-70
-20
-1 5
-10
-5
0
5
P in (S C L )( d B m )
Publication Date : Apr., 2011
2
10
15
IM3(dBc)
V D = 10 V
ID =1 50 m A
f 1 = 1 .9 0 G H z
f 2 = 1 .9 1 G H z
< High-power GaAs FET (small signal gain stage) >
MGF0918A
L & S BAND / 0.5W
SMD non - matched
MGF0918A S PARAMETERS
freq.
(MHz)
600
1000
1400
1800
2200
2600
3000
3400
3800
4200
4600
5000
5400
5800
6200
6600
7000
7400
7800
8200
8600
9000
9400
9800
10200
10600
11000
11400
11800
12200
(Ta=25C,VD=10V,ID=150mA, Reference Plane see Fig.1)
S11
(mag)
0.966
0.939
0.919
0.905
0.897
0.892
0.890
0.889
0.888
0.886
0.883
0.877
0.868
0.856
0.840
0.820
0.797
0.771
0.743
0.713
0.674
0.618
0.545
0.485
0.475
0.535
0.640
0.730
0.813
0.876
S21
(ang)
-47.70
-72.11
-90.91
-105.49
-116.96
-126.16
-133.71
-140.07
-145.57
-150.45
-154.92
-159.19
-163.52
-168.29
-173.99
177.60
172.89
162.95
154.14
146.69
137.66
123.53
102.00
73.05
39.23
5.13
-23.88
-43.68
-54.21
-63.08
(mag)
6.220
5.269
4.470
3.805
3.257
2.811
2.453
2.168
1.946
1.775
1.647
1.553
1.489
1.448
1.427
1.423
1.433
1.457
1.491
1.536
1.587
1.643
1.699
1.748
1.782
1.788
1.753
1.656
1.473
1.176
(ang)
142.02
120.98
103.95
89.91
78.05
67.78
58.64
50.31
42.56
35.21
28.16
21.31
14.56
7.83
1.01
-6.02
-13.41
-21.33
-29.97
-39.52
-50.18
-62.15
-75.56
-90.54
-107.10
-125.18
-144.56
-164.88
177.63
160.67
S12
(mag)
0.015
0.021
0.024
0.026
0.026
0.025
0.024
0.024
0.023
0.023
0.022
0.023
0.024
0.025
0.027
0.029
0.031
0.035
0.038
0.042
0.047
0.053
0.058
0.064
0.071
0.077
0.082
0.086
0.088
0.087
S22
(ang)
56.75
41.10
27.49
15.71
5.60
-3.00
-10.20
-16.12
-20.89
-24.64
-27.52
-29.72
-31.42
-32.85
-34.23
-35.84
-37.92
-40.74
-44.55
-49.58
-56.03
-64.03
-73.66
-84.89
-97.58
-111.47
-126.11
-140.87
-154.90
-167.09
(mag)
0.302
0.360
0.426
0.492
0.553
0.606
0.651
0.687
0.716
0.738
0.754
0.768
0.779
0.788
0.797
0.806
0.814
0.820
0.824
0.824
0.818
0.806
0.786
0.759
0.723
0.678
0.636
0.609
0.607
0.636
(ang)
-56.49
-78.28
-94.16
-105.68
-114.07
-120.27
-125.02
-128.82
-132.05
-134.94
-137.64
-140.24
-142.75
-145.19
-147.53
-149.77
-151.90
-153.92
-155.84
-157.68
-159.47
-161.21
-162.88
-164.44
-165.75
-166.62
-166.73
-165.59
-162.55
-156.74
2.0
Gate Mark
Round corner
0.8
0.80
Gate Mark
(1)
(1)
(3)
2.8
1.20
4.20
Reference Plane
Reference Plane
(2)
(2) 0.6
0.25
4.00
2.5
0.3
(1) Gate
(2) Drain
(3) Source
BACK SIDE PATTERN
(Unit:mm)
Fig.1 OUTLINE DRAWING
Publication Date : Apr., 2011
3
K
MAG/MSG
0.21
0.29
0.36
0.42
0.49
0.60
0.70
0.76
0.86
0.93
1.07
1.10
1.15
1.20
1.20
1.18
1.21
1.12
1.12
1.13
1.19
1.27
1.40
1.47
1.45
1.38
1.22
1.15
1.14
1.19
(dB)
26.18
24.00
22.70
21.65
20.98
20.51
20.09
19.56
19.27
18.87
17.15
16.35
15.58
14.90
14.51
14.33
13.88
14.06
13.86
13.40
12.62
11.77
10.90
10.32
10.00
10.00
10.44
10.47
9.96
8.65
< High-power GaAs FET (small signal gain stage) >
MGF0918A
L & S BAND / 0.5W
SMD non - matched
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Publication Date : Apr., 2011
4