MITSUBISHI MGF4953A_11

< Low Noise GaAs HEMT >
MGF4953A
Leadless ceramic package
DESCRIPTION
The MGF4953A super-low noise InGaAs HEMT (High Electron Mobility
Transistor) is designed for use in C to K band amplifiers.
The lead-less ceramic package assures minimum parasitic losses.
Outline Drawing
FEATURES
Low noise figure
@ f=12GHz
NFmin. = 0.35dB (Typ.)
High associated gain
@ f=12GHz
Gs = 13.5dB (Typ.)
Fig.1
APPLICATION
C to K band low noise amplifiers
QUALITY GRADE
MITSUBISHI Proprietary
GG
Not to be reproduced or disclosed without
permission by Mitsubishi Electric
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10mA
ORDERING INFORMATION
Tape & reel
10,000pcs/reel
RoHS COMPLIANT
MGF4953A is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
Symbol
VGDO
Gate to drain voltage
VGSO
ID
Gate to source voltage
-3
V
Drain current
60
mA
Total power dissipation
50
mW
Channel temperature
125
C
Storage temperature
-55 to +125
C
PT
Tch
Tstg
Parameter
(Ta=25C )
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Ratings
Unit
-3
V
(Ta=25C )
Test conditions
Limits
Unit
MIN.
TYP.
MAX
Gate to drain breakdown voltage
IG=-10A
-3
--
--
IGSS
Gate to source leakage current
--
--
50
A
IDSS
Saturated drain current
VGS=-2V,VDS=0V
VGS=0V,VDS=2V
15
--
60
mA
VDS=2V,ID=500A
VDS=2V,
-0.1
--
-1.5
V
12.0
13.5
--
dB
--
0.35
0.50
dB
V(BR)GDO
VGS(off)
Gs
Gate to source cut-off voltage
Associated gain
ID=7.5mA,f=12GHz
NFmin. Minimum noise figure
Note: Gs and NFmin. are tested with sampling inspection.
Publication Date : Apr., 2011
1
V
< Low Noise GaAs HEMT >
MGF4953A
Leadless ceramic package
Fig.1
Side
Top
+0.20
2.15 -0.10
Bottom
+0.20
-0.10
2.15
③


5
0.0
J 5
6EG

2-R0.20

③

②
②

0)
2-R0.275
.2
(2
①
①

0.20±0.1
0.80±0.1
20±
0.5
5
0.0
(0.30)
Square shape electrode is Drain
(2.30)
from "A" side view
Unit: mm
① Gate
② Source
③ Drain
Publication Date : Apr., 2011
2
②
±

)
.02
(1
2
0
1.2
②
2-
A
0.0
±
.0 55
4-
5
< Low Noise GaAs HEMT >
MGF4953A
Leadless ceramic package
TYPICAL CHARACTERISTICS
(Ta=25°C)
ID vs. VDS
ID vs. VGS
(VDS=2V)
(VGS=~0.1V/STEP)
40
40
30
30
20
20
10
10
0
0
0
1
2
3
DRAIN TO SOURCE VOLTAGE
-1
GATE TO SOURCE VOLTAGE
VDS (V)
NF & Gs vs. ID
(f=12GHz, VDS=2V)
1.1
16
Ta=25℃
V DS=2V
f =12GHz
1.0
15
14
)
0.9
Gs
13
(
0.8
0.7
12
0.6
11
0.5
10
0.4
9
NF
0.3
8
0.2
7
0
5
10
15
-0.5
20
DRAIN CURRENT ID (mA)
Publication Date : Apr., 2011
3
0
VGS (V)
< Low Noise GaAs HEMT >
MGF4953A
Leadless ceramic package
S PARAMETERS
Freq.
(GHz)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
(VDS=2V,ID=10mA, Ta=25C)
S11
(mag)
0.989
0.968
0.942
0.927
0.857
0.787
0.716
0.654
0.582
0.525
0.494
0.474
0.471
0.484
0.501
0.544
0.579
0.612
0.646
0.688
0.733
0.765
0.798
0.831
0.831
0.814
S21
(ang)
-4.0
-20.4
-36.8
-53.2
-69.5
-85.8
-101.5
-119.2
-135.3
-152.8
-170.2
171.2
152.0
134.6
118.4
101.2
86.8
73.6
62.0
50.3
39.4
28.6
17.7
6.9
-3.9
-14.7
(mag)
5.212
5.101
4.989
4.877
4.766
4.655
4.524
4.378
4.162
4.008
3.887
3.761
3.656
3.593
3.522
3.335
3.209
3.038
2.814
2.726
2.613
2.499
2.384
2.269
2.152
2.034
(ang)
166.6
152.0
137.3
122.7
108.0
93.4
79.3
64.9
52.0
39.5
27.3
15.2
2.9
-9.4
-21.9
-36.1
-49.3
-62.7
-73.7
-85.1
-96.7
-108.3
-120.0
-131.6
-143.2
-154.8
S12
(mag)
0.038
0.046
0.054
0.062
0.070
0.078
0.085
0.093
0.095
0.095
0.096
0.096
0.097
0.096
0.095
0.098
0.099
0.101
0.102
0.107
0.112
0.115
0.119
0.123
0.127
0.131
(ang)
82.4
72.4
62.4
52.4
42.4
32.4
23.5
13.5
4.9
-2.5
-8.4
-14.2
-20.6
-26.0
-33.2
-37.5
-42.9
-49.3
-56.2
-63.9
-75.1
-86.3
-97.5
-108.7
-119.9
-131.1
S22
(mag)
0.689
0.669
0.640
0.604
0.554
0.505
0.454
0.399
0.341
0.288
0.250
0.212
0.180
0.159
0.155
0.163
0.182
0.216
0.260
0.301
0.340
0.370
0.405
0.444
0.483
0.522
(ang)
-10.7
-21.1
-31.5
-41.9
-52.4
-62.7
-72.7
-84.1
-93.6
-102.8
-113.0
-124.7
-140.4
-156.4
-175.5
153.3
132.4
110.1
90.7
76.3
59.0
48.0
37.0
30.2
23.1
17.1
NOISE PARAMETERS (VDS=2V, ID=10mA, Ta=25C)
Freq.
(GHz)
6
7
8
9
10
11
12
13
14
15
16
17
18
NFmin
(dB)
0.27
0.29
0.30
0.31
0.35
0.37
0.38
0.40
0.43
0.45
0.48
0.50
0.53
opt
(mag)
0.71
0.67
0.61
0.56
0.52
0.48
0.44
0.40
0.38
0.36
0.36
0.36
0.38
(ang)
45.4
58.4
72.7
88.1
104.7
122.3
140.9
160.3
-179.4
-158.4
-136.6
-114.2
-91.2
Rn
（）
10.0
8.5
7.0
5.5
4.0
3.0
2.5
1.5
2.0
2.0
3.0
4.0
6.0
Measurement plane (2.2mm)
Board; RO4003C (Rogers Corp.)
r=3.38, t=0.508mm, Au (Cu) =0.035mm
Note:
We are ready to provide nonlinear model for ADS and MWO users. If you are interested, please contact our sales
offices.
Publication Date : Apr., 2011
4
< Low Noise GaAs HEMT >
MGF4953A
Leadless ceramic package
Keep safety first in your circuit designs!
 Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and
more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire ore property damage. Remember to give due
consideration to safety when making your circuit designs, with appropriate measures such as (i) placement
of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any
malfunction or mishap.
Notes regarding these materials
 These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
 Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any thirdparty’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit
application examples contained in these materials.
 All information contained in these materials, including product data, diagrams, charts, programs and
algorithms represents information on products at the time of publication of these materials, and are subject
to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons.
It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized
Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product
listed herein.
The information described here may contain technical in accuracies or typographical errors.
Mitsubishi Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from
these inaccuracies or errors.
Please also pay attention to information published by Mitsubishi Electric Corporation by various means,
including the Mitsubishi Semiconductor home page (http://www.mitsubishielectric.com/).
 When using any or all of the information contained in these materials, including product data, diagrams,
charts, programs, and algorithms, please be sure to evaluate all information as a total system before
making a final decision on the applicability of the information and products. Mitsubishi Electric Corporation
assumes no responsibility for any damage, liability or other loss resulting from the information contained
herein.
 Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or
system that is used under circumstances in which human life is potentially at stake. Please contact
Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when
considering the use of a product contained herein for any specific purposes, such as apparatus or systems
for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
 The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole
ore in part these materials.
 If these products or technologies are subject to the Japanese export control restrictions, they must be
exported under a license from the Japanese government and cannot be imported into a country other than
the approved destination.
Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country
of destination is prohibited.
 Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product
distributor for further details on these materials or the products contained therein.
© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : Apr., 2011
5