MITSUBISHI MGF4964BL

< Low Noise GaAs HEMT >
MGF4964BL
Micro-X type plastic package
DESCRIPTION
The MGF4964BL super-low noise InGaAs HEMT (High Electron Mobility
Transistor) is designed for use in K band amplifiers.
Outline Drawing
FEATURES
Low noise figure
@ f=20GHz
NFmin. = 0.65dB (Typ.)
Fig.1
High associated gain
@ f=20GHz
Gs = 13.5dB (Typ.)
APPLICATION
C to K band low noise amplifiers
MITSUBISHI Proprietary
Not to be reproduced or disclosed without
permission by Mitsubishi Electric
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=2V, ID=10mA
ORDERRING INFORMATION
Tape & reel
4000pcs./reel
RoHS COMPLIANT
MGF4964BL is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
Symbol
VGDO
Gate to drain voltage
VGSO
ID
Drain current
PT
Tch
Tstg
Parameter
Gate to source voltage
Ratings
Unit
-3
V
-3
V
IDSS
mA
Total power dissipation
50
mW
Channel temperature
125
C
Storage temperature
-55 to +125
C
ELECTRICAL CHARACTERISTICS
Symbol
(Ta=25C )
Parameter
(Ta=25C )
Test conditions
Limits
Unit
MIN.
TYP.
MAX
Gate to drain breakdown voltage
IG=-10A
-3
--
--
IGSS
Gate to source leakage current
--
--
50
A
IDSS
Saturated drain current
VGS=-2V,VDS=0V
VGS=0V,VDS=2V
15
--
60
mA
VDS=2V,ID=500A
VDS=2V,
-0.1
--
-1.5
V
11.5
13.5
--
dB
--
0.65
0.90
dB
V(BR)GDO
VGS(off)
Gs
Gate to source cut-off voltage
Associated gain
ID=10mA,f=20GHz
NFmin. Minimum noise figure
Note: Gs and NFmin. are tested with sampling inspection.
Publication Date : Apr., 2011
1
V
<Low Noise GaAs HEMT>
MGF4964BL
Micro-X type plastic package
Fig.1
3.2±0.1
(0.30)
2.6±0.1
(0.30)
Bottom
0.5±0.1
Top
(2.3)
(2.3)
3.2±0.1
aAA
②
(0.30)
②
0.65±0.1
H
2.6±0.1
(0.30)
①
③
Unit : mm
2.2±0.1
0.15±0.05
Side
1.35±0.2
1.7±0.1
① Gate
② Source
③ Drain
(GD-32)
Publication Date : Apr., 2011
2
<Low Noise GaAs HEMT>
MGF4964BL
Micro-X type plastic package
TYPICAL CHARACTERISTICS (Ta=25°C)
ID vs. VDS
ID vs. VGS
50
VGS=-0.1V/STEP
VGS=0V
Drain current, ID (mA)
Drain current, ID (mA)
50
40
30
20
10
VDS=2V
30
20
10
0
0
0
-1
-0.5
0
Gate to Source voltage, VGS(V)
1
2
3
Drain to Source voltage, VDS(V)
NF & Gs vs. ID
Ta=25℃
VDG=2V
F=20GHz
16
Gs
1.6
12
1.2
8
NF
0.8
4
0.4
0
0
5
10
15
Associated Gain , Gs (dB)
2.0
Noise Figure ,NF (dB)
40
20
Drain Current , ID (mA)
Publication Date : Apr., 2011
3
<Low Noise GaAs HEMT>
MGF4964BL
Micro-X type plastic package
S PARAMETERS (Ta=25C, VDS=2V, ID=10mA)
Freq.
(GHz)
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
S11
(mag)
0.977
0.952
0.918
0.877
0.831
0.781
0.724
0.659
0.606
0.568
0.516
0.524
0.520
0.541
0.559
0.588
0.614
0.630
0.641
0.666
0.669
0.656
0.646
0.611
0.572
S21
(ang)
-31.7
-47.5
-63.5
-79.7
-96.3
-113.7
-132.0
-149.5
-167.7
175.1
158.1
139.7
124.1
105.9
85.8
68.0
47.4
30.5
13.1
-3.8
-20.0
-37.0
-54.3
-69.1
-88.1
(mag)
4.626
4.519
4.528
4.467
4.400
4.353
4.221
4.063
3.928
3.829
3.706
3.731
3.821
3.870
3.818
3.828
3.571
3.404
3.335
3.280
3.218
3.141
3.138
3.143
3.038
S12
(ang)
146.7
130.5
114.1
98.0
81.8
65.5
49.2
33.7
18.4
4.1
-9.4
-24.6
-38.7
-55.1
-72.6
-90.8
-109.2
-124.6
-142.0
-157.7
-174.6
166.5
148.2
129.0
106.4
(mag)
0.024
0.034
0.044
0.052
0.060
0.066
0.071
0.071
0.070
0.069
0.060
0.063
0.050
0.044
0.049
0.052
0.060
0.057
0.055
0.053
0.055
0.056
0.055
0.059
0.057
S22
(ang)
65.5
53.4
41.5
29.7
18.4
6.6
-6.6
-19.3
-31.3
-41.6
-55.1
-60.3
-65.4
-67.7
-70.7
-76.2
-92.2
-108.3
-123.9
-137.5
-160.0
-178.4
147.5
124.6
98.0
(mag)
0.592
0.576
0.553
0.526
0.497
0.464
0.422
0.379
0.340
0.310
0.271
0.270
0.277
0.292
0.311
0.356
0.371
0.384
0.408
0.425
0.457
0.474
0.482
0.537
0.552
(ang)
-26.1
-39.3
-51.9
-65.0
-77.9
-91.4
-105.5
-118.0
-131.5
-143.9
-153.2
-171.2
-179.1
165.4
143.4
123.9
97.6
78.9
62.7
44.4
29.9
16.2
1.1
-8.4
-25.0
NOISE PARAMETERS (Ta=25C, VDS=2V, ID=10mA)
Freq.
(GHz)
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
Γopt
(mag)
(ang)
0.73
64.1
0.67
78.7
0.61
94.4
0.56
111.0
0.51
128.5
0.47
146.9
0.43
166.1
0.40
-174.1
0.38
-153.8
0.37
-133.1
0.37
-112.1
0.38
-91.1
0.40
-69.8
0.44
-48.4
0.49
-26.5
0.56
-4.4
Rn
0.20
0.16
0.12
0.09
0.06
0.04
0.03
0.04
0.05
0.07
0.10
0.13
0.17
0.21
0.26
0.30
NF min
(dB)
0.23
0.24
0.25
0.27
0.28
0.30
0.33
0.35
0.39
0.43
0.47
0.52
0.57
0.62
0.67
0.72
Measurement plane (3.2mm)
Recommended foot pattern; RO4003C/ROGERS
(r=3.38, t=0.51mm)
Note: We are ready to provide nonlinear model for ADS and MWO users. If you are interested, please contact our sales offices.
Publication Date : Apr., 2011
4
<Low Noise GaAs HEMT>
MGF4964BL
Micro-X type plastic package
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Publication Date : Apr., 2011
5