, Line, TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor 2SA1940 11 DESCRIPTION • Low Collector Saturation Voltage: VCE(sa.)= -2.0V(Min) @lc= -6A r • Good Linearity of hFE 2 * PIN 1.BASE • Complement to Type 2SC51 97 2. COLLECTOR 3.BMITTER APPLICATIONS 2 TO-3PI package 3 • Power amplifier applications • Recommend for 55W high fidelity audio frequency C -*- ^__ amplifier output stage applications 1 i~» Ml *L 1 ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER _ *T C t > 'f1 VALUE \ UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V 0 f } 1 .^ if, nV, ^ i\i Emitter-Base Voltage -5 V Ic Collector Current-Continuous -8 A IB Base Current-Continuous -0.8 A PC Collector Power Dissipation Tc=25 C 80 W Tj Junction Temperature 150 •c -55-150 °c Tstg Storage Temperature Range ~ta _ ii | - > \m ii J -»>• U-N—» VEBO ;j — H._ ' • ¥ —V R WIN DIM MAX A 19.90 20.10 B 15.50 15.70 4.40 4.60 C 1.10 0.90 D 3.20 3,40 F 2.90 3.10 H J 0.50 0.70 19.90 20.10 K 1.90 2.10 L 10.80 11,00 N 4.40 4.60 U H 3.50 3.35 S 1.40 1.60 T 1.00 1.20 LI 2.10 2.30 Z 8.90 9.10 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time or"going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verity that datasheets are current before placing orders. Qualify Semi-Conductors Silicon PNP Power Transistor 2SA1940 ELECTRICAL CHARACTERISTICS Tc=25'C unless otherwise specified PARAMETER SYMBOL CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IG= -50mA ; IB= 0 VcE(sat) Collector-Emitter Saturation Voltage |c= -6A; IB= -0.6A -2.0 V VeE(on) Base-Emitter On Voltage |c= -4A ; VCE= -5V -1.5 V ICBO Collector Cutoff Current V CB =-120V;I E =0 -5 uA IEBO Emitter Cutoff Current VEB= -5V; lc=0 -5 uA hpE-1 DC Current Gain lc=-1A;V CE =-5V 55 hFE-2 DC Current Gain lc= -4A ; VCE= -5V 35 COB Output Capacitance lE=0;VcB=-10V;ftes,= 1.0MHz Current-Gain—Bandwidth Product lc=-1A; VCE=-5V fr hFE.i Classifications R O 55-110 80-160 -120 V 160 260 pF 30 MHz