, One. / TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor 2SA1964 DESCRIPTION • Collector-Emitter Breakdown VoltagePIN 1.BASE :V(BR)CEo=-160V(Min) 2.COLLECTOR • Good Linearity of hFE 3. EMITTER • Wide Area of Safe Operation TO-220Fa package • Complement to Type 2SC5248 -.—B—* S-» '^•r +, rf APPLICATIONS L. • Power amplifier applications. j • Driver stage amplifier applications. A . O j r O ^ '• ABSOLUTE MAXIMUM RATINGS(Ta=25°C) SYMBOL VCBO PARAMETER Collector-Base Voltage VALUE -160 UNIT V m j" \ 1 t J liKi C I K rv ju d Ij • fri't •— *0»t- ~-+m ff • VCEO Collector-Emitter Voltage -160 V mm VEBO Ic Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation @Ta=25'C -5 V -1.5 A 2 W PC Collector Power Dissipation @TC=25'C 20 Tj Junction Temperature 150 °c Tstg Storage Temperature -55-150 "C DIM A B C 0 F G H J K L N Q R S U V MIN 16^5 930 4.35 0.75 3JO 6.90 5.15 0.45 13J5 1.10 4.98 445 2.95 2.70 1.75 1.30 MAX 17.15 10.10 4.65 0^0 3.40 7.10 5.45 0.75 13.65 1JO 5,18 5.15 3J!5 2.90 2J06 1JO NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors Silicon PNP Power Transistor 2SA1964 ELECTRICAL CHARACTERISTICS Tj=25'C unless otherwise specified PARAMETER SYMBOL CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage lc=-1mA; le= 0 -160 V V(BR)CBO Collector-Base Breakdown Voltage lc= -50 u A; IE= 0 -160 V V(BR)EBO Emitter-Base Breakdown Voltage l E =-50nA;l c =0 -5 V VcE(sat) Collector-Emitter Saturation Voltage I C =-1A;I B =-0.1A -1.0 V ICBO Collector Cutoff Current V CB =-160V;I E =0 -1.0 uA IEBO Emitter Cutoff Current VEB= -4V; lc= 0 -1.0 uA hFE DC Current Gain lc=-0.1A;V C E=-5V fr Current-Gain— Bandwidth Product lc=-0.2A;V CE =-10V 150 MHz Output Capacitance IE=0; VCB=-10V;f=1MHz 35 pF COB Classifications D E 60-120 1 00-200 60 200