NJSEMI 2SA1964

, One.
/
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Power Transistor
2SA1964
DESCRIPTION
• Collector-Emitter Breakdown VoltagePIN 1.BASE
:V(BR)CEo=-160V(Min)
2.COLLECTOR
• Good Linearity of hFE
3. EMITTER
• Wide Area of Safe Operation
TO-220Fa package
• Complement to Type 2SC5248
-.—B—*
S-»
'^•r
+,
rf
APPLICATIONS
L.
• Power amplifier applications.
j
• Driver stage amplifier applications.
A
.
O
j
r
O
^
'•
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
VCBO
PARAMETER
Collector-Base Voltage
VALUE
-160
UNIT
V
m j"
\
1
t
J
liKi C
I
K
rv
ju
d Ij
•
fri't
•—
*0»t-
~-+m ff •
VCEO
Collector-Emitter Voltage
-160
V
mm
VEBO
Ic
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation
@Ta=25'C
-5
V
-1.5
A
2
W
PC
Collector Power Dissipation
@TC=25'C
20
Tj
Junction Temperature
150
°c
Tstg
Storage Temperature
-55-150
"C
DIM
A
B
C
0
F
G
H
J
K
L
N
Q
R
S
U
V
MIN
16^5
930
4.35
0.75
3JO
6.90
5.15
0.45
13J5
1.10
4.98
445
2.95
2.70
1.75
1.30
MAX
17.15
10.10
4.65
0^0
3.40
7.10
5.45
0.75
13.65
1JO
5,18
5.15
3J!5
2.90
2J06
1JO
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon PNP Power Transistor
2SA1964
ELECTRICAL CHARACTERISTICS
Tj=25'C unless otherwise specified
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
lc=-1mA; le= 0
-160
V
V(BR)CBO
Collector-Base Breakdown Voltage
lc= -50 u A; IE= 0
-160
V
V(BR)EBO
Emitter-Base Breakdown Voltage
l E =-50nA;l c =0
-5
V
VcE(sat)
Collector-Emitter Saturation Voltage
I C =-1A;I B =-0.1A
-1.0
V
ICBO
Collector Cutoff Current
V CB =-160V;I E =0
-1.0
uA
IEBO
Emitter Cutoff Current
VEB= -4V; lc= 0
-1.0
uA
hFE
DC Current Gain
lc=-0.1A;V C E=-5V
fr
Current-Gain— Bandwidth Product
lc=-0.2A;V CE =-10V
150
MHz
Output Capacitance
IE=0; VCB=-10V;f=1MHz
35
pF
COB
Classifications
D
E
60-120
1 00-200
60
200