, One. J.E.IS.S..U TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SB1490 Silicon PNP Darlington Power Transistor DESCRIPTION • High DC Current Gain: hFE= 5000(Min)@lc= -6A • Low-Collector Saturation Voltage- i » .» . ' : VCE(sat)= -2.5V(Max.)@lc= -6A • Complement to Type 2SD2250 02 PIN 1.BASE 2.COLLECTOR ii ( • 1 APPLICATIONS 2 ^—-~ B - • Designed for power amplifier applications 3.MITTER TO-3PL package 3 » 1 ™*«*.C* f • Optimum for SOW HiFi output applications. j D ABSOLUTE MAXIMUM RATINGS(Ta=25X:) SYMBOL PARAMETER A VALUE UNIT r -i O v ^iaipflA.^ Ii » VcBO Collector-Base Voltage -160 fc-H1* Pm K V Qi »'j |*• '• I B •' VCEO Collector-Emitter Voltage -140 i' V -* >—G--^ VEBO Emitter-Base Voltage -5 V Collector Current-Continuous -7 A —j mm Ic ICM Collector Current-Peak Collector Power Dissipation @ TC-25°C -12 90 W PC Tj Tstg A Collector Power Dissipation @ Ta=25°C 3.5 Junction Temperature 150 •c -55-150 r Storage Temperature Range DIM A B C D b F G H J K N P Q R U W WIN 25.50 19.30 4^0 0.90 2.80 2.40 10.80 3.10 0.50 20.00 3.90 2.40 3.10 1.90 3.90 2.90 MAX 26.50 20.201 5^0 1.10 3JO 2.60 11.00 3.30 0.70 21.00 4.10 2.GO 330 2.10 4.10 3.10 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors Silicon PNP Darlington Power Transistor 2SB1490 ELECTRICAL CHARACTERISTICS Tc~25'C unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage lc= -30mA; IB= 0 VcE(sat) Collector-Emitter Saturation Voltage lc= -6A; IB= -6mA -2.5 V VaE(sat) Base-Emitter Saturation Voltage lc= -6A; IB= -6mA -3.0 V ICBO Collector Cutoff Current VCB=-160V; I E =0 -100 uA I CEO Collector Cutoff Current VCE= -140V; IB= 0 -100 wA IEBO Emitter Cutoff Current VEB= -5V; lc= 0 -100 uA hpE-1 DC Current Gain lc=-1A;V CE =-5V 2000 hFE-2 DC Current Gain lc= -6A; VCE= -5V 5000 Current-Gain— Bandwidth Product lc=-0.5A;V C E=-10V fi CONDITIONS MIN TYP. MAX UNIT V -140 30000 20 MHz 1.0 us 1.5 us 1.2 ns Switching Times 'on Turn-on Time tstg Storage Time Fall Time tf Classifications Q P 5000-15000 8000-30000 I C =-6A; lBi=-lB2=-6mA, Vcc= -50V