, One. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SB1507 Silicon PNP Power Transistor IH DESCRIPTION • Low Collector Saturation Voltage :VCE(sat)= -0.4(V)(Max)@lc= -4A • Good Linearity of hFE I I I | I | III • Wide Area of Safe Operation • Complement to Type 2SD2280 PIN 1 BASE 2. COLLECTOR 3. EMITTER ' TO-3PML package APPLICATIONS Iks • Designed for relay drivers, high-speed inverters, converters. -*. C f t Qi'd'. ABSOLUTE MAXIMUM RATINGS(Ta=25 r ) A _ (cf\ f \~ u 22 i -'J •:• j SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V .:v^i •"» Ji^d IL',.".T t vr_ it"H 4 . i -- e \ •f 1 k 1*- .». •^i '^B Q mm Ic ICM Collector Current-Continuous -7 A Collector Current-Peak -20 A Collector Power Dissipation @ Ta=25'C 3 W PC Tj Tstg Collector Power Dissipation Tc-25 C 40 Junction Temperature 150 •c -55-150 •c Storage Temperature Range DIM MIN A 19.90 B 15.90 5.50 C D 0.90 3.30 F G 2.90 5.90 H J 0.595 22.30 K 1.90 L N 10.80 (J 4.90 R 3.75 S 3.20 LI 9.90 Y 4.70 1.90 Z MAX 20.10 16.10 5.70 1.10 3.50 3.10 6.10 0.605 22.50 2.10 11.00 5.10 3.95 3.40 10.10 4.90 2.10 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors Silicon PNP Power Transistor 2SB1507 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage lc=-1mA; RBE= °° -50 V V(BR)CBO Collector-Base Breakdown Voltage lc=-1mA;l E =0 -60 V V(BR)EBO Emitter-Base Breakdown Voltage l E =-1mA;l c =0 -6 V VcE(sat) Collector-Emitter Saturation Voltage |c= -4A; IB= -0.4A -0.4 V ICBO Collector Cutoff Current VCB= -40V; IE= 0 -100 nA IEBO Emitter Cutoff Current VEB= -4V; lc= 0 -100 nA hpE-1 DC Current Gain lc=-1A; VCe=-2V 70 hFE-2 DC Current Gain lc= -5A; VCE= -2V 30 Current-Gain — Bandwidth Product lc=-1A;V C E=-5V fr 280 10 MHz 0.2 fS 0.7 us 0.1 US Switching Times ton Turn-on Time lstg Storage Time tf lc=-2A; R L = 1 0 Q , IB1= -\B2= -0.2A, Vcc= -20V Fall Time hpE-1 Classifications Q R S 70-140 100-200 140-280