, U na. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SA1986 Silicon PNP Power Transistor i DESCRIPTION • High Current Capability • High Power Dissipation • High Collector-Emitter Breakdown Voltage: V(BR)CEO= -230V(Min) PIN 1.BASE • Complement to Type 2SC5358 2.COLLECTOR 3. EMITTER APPLICATIONS 1 • Power amplifier applications TO-3PI package 2 3 • Recommend for SOW high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -230 V VCEO Collector-Emitter Voltage -230 V VEBO Emitter-Base Voltage -5 V IB Utg Collector Current-Continuous -15 Base Current-Continuous -1.5 Collector Power Dissipation @ TC=25'C 150 w Junction Temperature 150 "C -55-150 •c Storage Temperature Range mm DIM A B C D F H J K L N Q R S T U z WIN MAX 19.90 20.10 15.50 15.70 4.60 4.40 1.10 0.90 3.20 3.40 2.90 3.10 0.50 0.70 19.90 20.10 1.90 2.10 10.80 11.00 4.40 4.60 3.35 3.30 1.40 1.60 1.00 1.20 2.10 2,30 8.90 9.10 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors Silicon PNP Power Transistor 2SA1986 ELECTRICAL CHARACTERISTICS Tc=25'C unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage lc= -50mA ; IB= 0 VcE(sat) Collector-Emitter Saturation Voltage lc= -8.0A; IB= -0.8A -3.0 V VeE(an) Base-Emitter On Voltage lc= -7A ; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -230V ; IE= 0 -5 uA IEBO Emitter Cutoff Current VEB= -5V; lc= 0 -5 uA hpE-1 DC Current Gain lc=-1A; VCE=-5V 55 hpE-2 DC Current Gain lc= -7A ; VCE= -5V 35 COB Output Capacitance |E=0 ; VCB= -1 OV;f= 1.0MHz 360 pF Current-Gain— Bandwidth Product lc=-1A; VCE=-5V 30 MHz fr • hpE-1 Classifications R 0 55-110 80-160 CONDITIONS MIN TYP. MAX UNIT V -230 160