12A02MH Ordering number : EN7483A SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 12A02MH Low-Frequency General-Purpose Amplifier Applications Applications • Low-frequency Amplifier, high-speed switching, small motor drive, muting circuit Features • • • Large current capacity Low collector-to-emitter saturation voltage (resistance) RCE (sat) typ.=285mΩ [IC=1A, IB=50mA] Small ON-resistance (Ron) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings VCBO VCEO Collector-to-Emitter Voltage Emitter-to-Base Voltage VEBO IC ICP Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature PC Tj Storage Temperature Tstg When mounted on ceramic substrate (600mm2×0.8mm) 0.25 Packing Type : TL 0 to 0.02 1.6 A mW AK LOT No. TL 2 0.3 Electrical Connection 3 0.85 0.25 --2 600 Marking LOT No. 0.07 A 12A02MH-TL-E 3 2.1 V --1 °C • Package : MCPH3 • JEITA, JEDEC : SC-70, SOT-323 • Minimum Packing Quantity : 3,000 pcs./reel 0.65 --5 °C Product & Package Information 1 V 150 unit : mm (typ) 7019A-004 0.15 V --12 --55 to +150 Package Dimensions 2.0 Unit --15 1 : Base 2 : Emitter 3 : Collector 1 SANYO : MCPH3 2 http://www.sanyosemi.com/en/network/ 90512 TKIM/O2203 TSIM TA-100608 No.7483-1/6 12A02MH Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Ratings Conditions min typ Unit max ICBO IEBO hFE VCB= --12V, IE=0A VEB= --4V, IC=0A VCE= --2V, IC= --10mA fT Cob VCE= --2V, IC= --50mA VCB= --10V, f=1MHz VCE(sat) VBE(sat) IC= --400mA, IB= --20mA IC= --400mA, IB= --20mA V(BR)CBO V(BR)CEO IC= --10μA, IE=0A IC= --1mA, RBE=∞ --15 --12 V V(BR)EBO ton IE= --10μA, IC=0A --5 V tstg tf See specified Test Circuit. 300 --100 nA --100 nA 700 450 MHz 6 pF --120 --240 --0.9 --1.2 mV V V 30 ns 75 ns 15 ns Switching Time Test Circuit IB1 PW=20μs D.C.≤1% OUTPUT IB2 INPUT RB VR 50Ω RL + + 220μF 470μF VBE=5V VCC= --5V IC=20IB1= --20IB2= --400mA Ordering Information memo 3,000pcs./reel Pb Free VCE= --2V --7mA --1000 --700 --600 --500 --3mA --2mA --400 --300 --1mA --200 --0.5mA --800 --600 --400 --200 --25° C --5mA 5°C 25 °C A 10 5m -- --1 IC -- VBE --1200 Ta= 7 mA mA --30 mA --20 Collector Current, IC -- mA --800 Shipping MCPH3 IC -- VCE --1000 --900 Package Collector Current, IC -- mA Device 12A02MH-TL-E --100 0 0 IB=0mA --100 --200 --300 --400 --500 --600 --700 --800 --900 --1000 Collector-to-Emitter Voltage, VCE -- mV IT05094 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V --1.2 IT05095 No.7483-2/6 12A02MH hFE -- IC 1000 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV DC Current Gain, hFE 7 Ta=75°C 25°C 5 --25°C 3 2 100 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 2 --100 5°C =7 Ta 5°C --2 5 25 3 °C 2 --10 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 10 7 5 3 2 3 5 7 2 --10 Collector-to-Base Voltage, VCB -- V f=1MHz ON-resistance, Ron -- Ω IB 2 1.0 7 5 3 2 0.1 --0.1 3 5 7--1000 IT05097 3 2 25°C --1.0 Ta= --25°C 7 75°C 5 3 2 2 3 5 7 --10 2 3 5 7 --100 2 3 5 7--1000 IT05099 fT -- IC VCE= --2V 5 3 2 100 7 5 3 2 2 3 5 7 --10 2 3 5 7 --100 2 3 5 7--1000 IT05101 Collector Current, IC -- mA PC -- Ta OUT 1kΩ 3 2 5 700 IN 5 5 7 --100 3 IC / IB=20 IT05100 1kΩ 2 VBE(sat) -- IC 10 --1.0 3 Collector Dissipation, PC -- mW 7 5 7 --10 7 Ron -- IB 10 3 1000 Gain-Bandwidth Product, fT -- MHz Output Capacitance, Cob -- pF 2 2 2 Collector Current, IC -- mA f=1MHz 1.0 --1.0 Ta= 3 2 IT05098 Cob -- VCB 3 °C 75 5°C --2 °C 25 --10 7 5 --0.1 --1.0 5 7--1000 Collector Current, IC -- mA 3 2 7 5 7 --100 7 5 --10 IC / IB=50 7 3 2 Collector Current, IC -- mA VCE(sat) -- IC --1000 IC / IB=20 --1.0 --1.0 5 7--1000 IT05096 Collector Current, IC -- mA VCE(sat) -- IC --1000 7 5 VCE= --2V 600 M ou 500 nt ed 400 on ac er am ic 300 bo ar d( 200 60 0m m2 ✕ 0. 8m 100 m ) 0 2 3 5 7 --1.0 2 Base Current, IB -- mA 3 5 7 --10 IT06091 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT05104 No.7483-3/6 12A02MH Embossed Taping Specification 12A02MH-TL-E No.7483-4/6 12A02MH Outline Drawing 12A02MH-TL-E Land Pattern Example Mass (g) Unit 0.007 mm * For reference Unit: mm 2.1 0.6 0.4 0.65 0.65 No.7483-5/6 12A02MH Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 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Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. 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Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of September, 2012. Specifications and information herein are subject to change without notice. PS No.7483-6/6