15C01M Ordering number : EN7505A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 15C01M Low-Frequency General-Purpose Amplifier Applications Applications • Low-frequency Amplifier, muting circuit Features • • • • Large current capacity Low collector-to-emitter saturation voltage (resistance) RCE (sat) typ.=0.58Ω [IC=0.7A, IB=35mA] Ultrasmall package facilitates miniaturization in end products Small ON-resistance (Ron) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings VCBO VCEO Collector-to-Emitter Voltage Emitter-to-Base Voltage VEBO IC ICP Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature PC Tj Storage Temperature Tstg Mounted on a glass epoxy board (20×30×1.6mm) 0.2 0.425 A mW °C °C Marking 0 to 0.08 1.25 2.1 Packing Type: TL 1.4 300 150 • Package : MCP • JEITA, JEDEC : SC-70, SOT-323 • Minimum Packing Quantity : 3,000 pcs./reel 15C01M-TL-E V mA --55 to +150 Product & Package Information 0.15 V 5 unit : mm (typ) 7023A-009 3 V 15 700 Package Dimensions 2.0 Unit 20 LOT No. 2 0.65 0.9 LOT No. TL 0.3 Electrical Connection 0.3 0.425 YP 1 1 : Base 2 : Emitter 3 : Collector SANYO : MCP 3 1 2 http://www.sanyosemi.com/en/network/ 92612 TKIM/O3003 TSIM TA-3683 No.7505-1/6 15C01M Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO VCB=15V, IE=0A VEB=4V, IC=0A Gain-Bandwidth Product hFE fT VCE=2V, IC=10mA VCE=2V, IC=50mA Output Capacitance Cob Collector-to-Emitter Saturation Voltage VCE(sat) VBE(sat) VCB=10V, f=1MHz IC=200mA, IB=10mA Emitter Cutoff Current DC Current Gain Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Ratings Conditions min typ Unit max 300 0.1 μA 0.1 μA 800 330 MHz 3.2 IC=200mA, IB=10mA pF 150 300 mV 0.9 1.2 V V(BR)CBO V(BR)CEO IC=10μA, IE=0A 20 IC=1mA, RBE=∞ 15 V V V(BR)EBO ton IE=10μA, IC=0A 5 V tstg tf See specified Test Circuit. 30 ns 77 ns 40 ns Ordering Information Device Package Shipping memo MCP 3,000pcs./reel Pb Free 15C01M-TL-E IC -- VCE 200 mA 0.9 0.4mA 100 0.3mA 80 0.2mA 60 0.1mA 40 400 300 200 100 20 IB=0mA 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Collector-to-Emitter Voltage, VCE -- V 1.8 0 3 Ta=75°C --25°C 2 100 7 5 2 3 5 7 10 2 3 5 7 100 Collector Current, IC -- mA 2 3 5 7 1000 IT05492 0.6 0.8 1.0 1.2 IT05491 VCE(sat) -- IC 1000 IC / IB=20 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 25°C 0.4 Base-to-Emitter Voltage, VBE -- V VCE=2V 5 0.2 IT05490 7 3 1.0 0 2.0 hFE -- IC 1000 DC Current Gain, hFE 500 5°C 25°C --25 °C 120 600 Ta= 7 0.5mA Collector Current, IC -- mA 700 0.6mA 160 140 VCE=2V 0.7mA 0 1.0mA Collector Current, IC -- mA 180 IC -- VBE 800 .8mA 5 3 2 100 °C 75 C 5° --2 7 = Ta 5 °C 25 3 2 10 1.0 2 3 5 7 10 2 3 5 7 100 Collector Current, IC -- mA 2 3 5 7 1000 IT05493 No.7505-2/6 15C01M VCE(sat) -- IC 1000 5 3 2 °C 75 5°C --2 5°C 100 = Ta 7 5 2 3 2 10 1.0 2 3 5 7 10 2 3 5 7 100 2 3 Gain-Bandwidth Product, fT -- MHz Output Capacitance, Cob -- pF 5 3 2 3 5 7 1.0 2 3 5 7 2 10 Collector-to-Base Voltage, VCB -- V 1kΩ ON-resistance, Ron -- Ω 2 IB 10 7 5 2 2 3 5 7 10 2 3 5 7 100 2 3 2 1.0 7 5 3 5 7 1000 IT05495 fT -- IC VCE=2V 5 3 2 100 7 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 IT05496 Collector Current, IC -- mA PC -- Ta 300 M ou nt 250 ed on ag las se 200 po xy 150 bo ar d( 100 20 ✕ 30 ✕ 1. 6m m ) 50 2 0.1 0.1 3 OUT IN 3 3 350 1kΩ 75°C 25°C 5 IT05497 Ron -- IB f=1MHz 7 5 1.0 3 Collector Dissipation, PC -- mW 100 7 5 Ta= --25°C 1000 7 7 2 2 Collector Current, IC -- mA f=1MHz 1.0 0.1 3 IT05494 Cob -- VCB 10 5 100 1.0 5 7 1000 Collector Current, IC -- mA IC / IB=20 7 Base-to-Emitter Saturation Voltage, VBE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 7 VBE(sat) -- IC 10000 IC / IB=50 0 2 3 5 7 1.0 2 Base Current, IB -- mA 3 5 7 10 IT06067 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT05499 No.7505-3/6 15C01M Embossed Taping Specification 15C01M-TL-E No.7505-4/6 15C01M Outline Drawing 15C01M-TL-E Land Pattern Example Mass (g) Unit 0.006 mm * For reference Unit: mm 2.1 1.0 0.7 0.65 0.65 No.7505-5/6 15C01M Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 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Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of September, 2012. Specifications and information herein are subject to change without notice. PS No.7505-6/6