STMICROELECTRONICS STN3P6F6

STN3P6F6
P-channel 60 V, 0.13 Ω typ., 3 A STripFET™ VI DeepGATE™
Power MOSFET in a SOT-223 package
Datasheet - production data
Features
4
1
2
Order code
VDSS
RDS(on)max
ID
STN3P6F6
60 V
0.16 Ω @ 10 V
3A
• RDS(on) * Qg industry benchmark
3
• Extremely low on-resistance RDS(on)
• High avalanche ruggedness
SOT-223
• Low gate drive power losses
Applications
• Switching applications
Figure 1. Internal schematic diagram
Description
This device is a P-channel Power MOSFET
developed using the 6th generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest RDS(on) in all packages.
D (2, 4)
G (1)
S (3)
Table 1. Device summary
Order code
Marking
Package
Packaging
STN3P6F6
STN3P6F6
SOT-223
Tape and reel
Note:
For the P-channel Power MOSFET the actual polarity of the voltages and the current must
be reversed.
March 2013
This is information on a product in full production.
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www.st.com
12
Contents
STN3P6F6
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
60
V
VGS
Gate-source voltage
± 20
V
ID
Drain current (continuous) at Tpcb = 25 °C
3
A
ID
Drain current (continuous) at Tpcb = 100 °C
2
A
Drain current (pulsed)
12
A
Total dissipation at Tpcb = 25 °C
2.6
W
Operating junction temperature
Storage temperature
-55 to 175
°C
Value
Unit
57
°C/W
IDM
PTOT
(1)
Tj
Pstg
1. Pulse width is limited by safe operating area.
Table 3. Thermal data
Symbol
Parameter
Rthj-pcb(1) Thermal resistance junction-pcb max
1. When mounted on FR-4 board of 15
Note:
mm2,
2 Oz Cu, t<10 sec
For the P-channel Power MOSFET actual polarity of voltages and current has to be
reversed.
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Electrical characteristics
2
STN3P6F6
Electrical characteristics
(Tcase = 25 °C unless otherwise specified).
Table 4. On /off states
Symbol
V(BR)DSS
Parameter
Drain-source
breakdown voltage
(VGS = 0)
Test conditions
ID = 250 µA
IDSS
Zero gate voltage
VDS = 60 V
drain current (VGS = 0) VDS = 60 V, TC=125 °C
IGSS
Gate-body leakage
current (VDS = 0)
Min.
Typ.
60
Gate threshold voltage VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source onVGS = 10 V, ID = 1.5 A
resistance
Unit
V
1
10
µA
µA
±100
nA
4
V
0.13
0.16
Ω
Min.
Typ.
Max.
Unit
-
pF
pF
pF
VGS = ± 20 V
VGS(th)
Max.
2
Table 5. Dynamic
Symbol
Parameter
Test conditions
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 48 V, f = 1 MHz,
VGS = 0
-
340
40
20
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 48 V, ID = 3 A,
VGS = 10 V
(see Figure 14)
-
6.4
1.7
1.7
-
nC
nC
nC
Min.
Typ.
Max.
Unit
-
6.4
5.3
14
3.7
-
ns
ns
ns
ns
Table 6. Switching times
Symbol
td(on)
tr
td(off)
tf
Note:
4/12
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 48 V, ID = 1.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 13)
For the P-channel Power MOSFET actual polarity of voltages and current has to be
reversed.
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STN3P6F6
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
ISD
ISDM (1)
Source-drain current
Source-drain current (pulsed)
VSD (2)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
trr
Qrr
IRRM
Test conditions
Min.
Typ.
Max. Unit
-
3
12
A
A
ISD = 3 A, VGS = 0
-
1.1
V
ISD = 5 A, di/dt = 100 A/µs
VDD = 16 V, Tj = 150 °C
(see Figure 15)
-
20
17.8
1.8
ns
nC
A
1. Pulse width limited by safe operating area.
2. Pulse duration = 300 µs, duty cycle 1.5%
Note:
For the P-channel Power MOSFET actual polarity of voltages and current has to be
reversed.
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Electrical characteristics
2.1
STN3P6F6
Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3. Thermal impedance
AM15339v1
ID
(A)
is
ea n)
ar
is DS(o
h
t
in ax R
ion m
at by
r
e
d
Op ite
Lim
10
10ms
1
pcb
100ms
Tj=175°C
Tc=25°C
0.1
1s
Single
pulse
0.01
0.1
10
1
VDS(V)
Figure 4. Output characteristics
Figure 5. Transfer characteristics
AM15340v1
ID
(A)
VGS= 10 V
AM15346v1
ID
(A)
VDS= 9 V
25
25
VGS= 6 V
20
20
15
15
VGS= 5 V
10
10
5
5
VGS= 4 V
0
0
5
0
10
VDS(V)
Figure 6. Gate charge vs gate-source voltage
AM15341v1
VGS
(V)
VDD=30V
10
ID=3A
2
3
4
5
6
7
8
9
10 VGS(V)
Figure 7. Static drain-source on-resistance
AM15350v1
RDS(on)
(mΩ)
VGS=10V
180
8
160
6
140
4
120
2
0
0
6/12
2
4
6
Qg(nC)
100
1
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2
3
4
5
6
7
8
9
ID(A)
STN3P6F6
Electrical characteristics
Figure 8. Capacitance variations
Figure 9. Normalized BVDSS vs temperature
C
(pF)
400
AM15342v1
350
Ciss
AM15349v1
VDS
(norm)
1.15
ID = 1mA
1.10
300
250
1.05
200
1
150
100
0.95
50
0
0
20
10
30
Coss
Crss
50 VDS(V)
40
Figure 10. Normalized gate threshold voltage vs
temperature
AM15344v1
VGS(th)
(norm)
0.90
-55 -30 -5
20 45 70 95 120
TJ(°C)
Figure 11. Normalized on-resistance vs
temperature
AM15350v1
RDS(on)
(norm)
2
1.10
VGS=10V
1.8
ID=250 µA
1
1.6
1.4
0.90
1.2
0.80
1
0.8
0.70
0.6
0.60
-55 -30 -5
20 45 70 95 120
TJ(°C)
0.4
-55 -30 -5
20 45 70 95 120
TJ(°C)
Figure 12. Source-drain diode forward
characteristics
AM15345v1
VSD
(V)
TJ=-55°C
1.05
TJ=25°C
0.95
0.85
0.75
TJ=175°C
0.65
0.55
2
4
6
8
ISD(A)
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Test circuits
3
STN3P6F6
Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
Figure 15. Test circuit for inductive load
switching and diode recovery times
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4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
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Package mechanical data
STN3P6F6
Table 8. SOT-223 mechanical data
mm
Dim.
Min.
Typ.
A
Max.
1.80
A1
0.02
0.1
B
0.60
0.70
0.85
B1
2.90
3.00
3.15
c
0.24
0.26
0.35
D
6.30
6.50
6.70
e
2.30
e1
4.60
E
3.30
3.50
3.70
H
6.70
7.00
7.30
V
10°
Figure 16. SOT-223 mechanical data drawing
0046067_M
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Revision history
Revision history
Table 9. Document revision history
Date
Revision
Changes
31-Oct-2012
1
First release.
09-Nov-2012
2
Modified: note 1 in Table 3
16-Jan-2013
3
Document status promoted from preliminary data to production data
14-Mar-2013
4
Modified: Figure 1, 3, Ciss, Coss, Crss typical values in Table 5
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STN3P6F6
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