J. , L)nc. C/ TELEPHONE: (973) 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 2SA1939 Silicon PNP Power Transistor DESCRIPTION • Low Collector Saturation Voltage- I1 : VCE(«t)= -2.0V(Min) @lc= -5A • Good Linearity of MFE • Complement to Type 2SC51 96 r APPLICATIONS • Power amplifier applications • Recommend for 40W high fidelity audio frequency amplifier output stage applications ' *I. ABSOLUTE MAXIMUM RATINGS(Ta=25C) VALUE i 2 2. COLLECTOR 3. EMITTER TO-3R package 3 -*- C (*- B _ •—•— H— »! t PARAMETER PIN 1.BASE m ' SYMBOL + UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V w$\ G -1 } i r K > ° K, in I/ " q ^ [ - 'V ! J T T tri i .f M u U-N VEBO Emitter-Base Voltage Ic Collector Current-Continuous IB Base Current-Continuous PC Tj -5 mm V -6 A -0.6 A Collector Power Dissipation @ I c-25 C 60 W Junction Temperature 150 'C DIM A B C D f H J K L N U N S T Tstg Storage Temperature Range -55-150 °c I) Z MIN 19.90 15.50 4.40 0.90 3.20 2.90 0.50 19.90 1.90 10.80 4.40 3.30 1.40 1.00 2.10 8.90 MAX 20.10 15.70 4.60 1.10 3.40 3.10 0.70 20.10 2.10 11.00 4.60 3.35 1.60, 1.20 2.30 9.10 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors 2SA1939 Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25'C unless otherwise specified TYP. PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage lc= -50mA ; IB= 0 VcE(sat) Collector-Emitter Saturation Voltage lc= -5A; IB= -0.5A -2.0 V VeEton) Base-Emitter On Voltage lc= -3A; VCE= -5V -1.5 V IGBO Collector Cutoff Current VCB= -80V; IE= 0 -5 nA IEBO Emitter Cutoff Current VEB= -5V; lc= 0 -5 uA hpE-1 DC Current Gain l c =-1A;V ce =-5V 55 hFE-2 DC Current Gain lc= -3A; VCE= -5V 35 COB Output Capacitance IE=0;VCB= -10V; ftest= 1.0MHz 180 pF Current-Gain— Bandwidth Product I G =-1A;V C E=-5V 30 MHz fr • CONDITIONS SYMBOL hpE-1 Classifications R 0 55-110 80-160 MIN MAX -80 UNIT V 160