Jsiisu <~>£.mi-L.ond.uctoi lA-10ducts., Una. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor 2SA1962 11 DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEO= -230V(Min) 1 • Good Linearity of hFE ' 3 PIN 1.BASE • Complement to Type 2SC5242 2. COLLECTOR 3.BUIITTER • APPLICATIONS 2 TO-SPf package 3 • Power amplifier applications • Recommend for SOW high fidelity audio frequency C *- -B— f» amplifier output stage applications t ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE C '[) ' o ° C \ UNIT M, '". ' ' i y ; \f •f ^ , ...... . . I,\ f_ : V L ; h \! ] VCBO Collector-Base Voltage -230 V P*'^ i VCEO Collector-Emitter Voltage -230 V •.'.'• || 1 I i! ' ' ] . i 1 |i U •«-N-». U -H-t-J -HR*- - ^ y j mm VEBO Ic Emitter-Base Voltage Collector Current-Continuous -5 -15 V DIM A A B C F H J D IB Base Current-Continuous -1.5 A PC Collector Power Dissipation Tc-25 C 130 W Tj Junction Temperature 150 Tstg Storage Temperature Range -55-150 °c •c K L N U R S T U Z MIN MAX 19.90 15,50 4.40 0.90 3.20 2.90 0.50 19.90 1.90 10.80 4.40 3.30 1.40 1.00 2.10 8.90 20.10 15.70 4.60 1.10 3.40 3.10 0.70 20.10 2.10 11.00 4.60 3.35 1.60 1.20 2.30 9.10 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information Furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verity that datasheets are current before placing orders. Quality Semi-Conductors Silicon PNP Power Transistor 2SA1962 ELECTRICAL CHARACTERISTICS Tc-25°C unless otherwise specified TYP. PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage l c =-50mA; IB= 0 VcE(sat) Collector-Emitter Saturation Voltage lc= -8A; IB= -0.8A -3.0 V VsE(on) Base-Emitter On Voltage lc= -7A ; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -230V ; IE= 0 -5 uA IEBO Emitter Cutoff Current VEB= -5V; lc= 0 -5 uA hpE-1 DC Current Gain lc=-1A;V C E=-5V 55 hFE-2 DC Current Gain lc= -7A ; VCE= -5V 35 COB Output Capacitance IE=0; VCB= -10V; ftest= 1.0MHz Current-Gain — Bandwidth Product lc=-1A;V CE =-5V fr • MIN SYMBOL hpE-1 Classifications R 0 55-110 80-160 CONDITIONS MAX UNIT V -230 160 360 PF 30 MHz