NJSEMI 2SB757

J.Elieu ^s.mi-L-onaactoi I/ loaucti, Line.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
2SB757
Silicon PNP Power Transistors
DESCRIPTION
•With TO-3PN package
•High collector current
•Wide area of safe operation
•Complement to type 2SD847
APPLICATIONS
•Audio amplifications
•Serie regulators
•General purpose power amplifiers
PINNING
DESCRIPTION
PIN
1
1
Base
2
Collector;connected to
mounting base
3
Emitter
2
3
Fig.1 simplified outline (TO-3PN) and symbol
ABSOLUTE MAXIMUM RATINGS (Tc=25
SYMBOL
CONDITIONS
PARAMETER
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-40
V
VCEO
Collector-emitter voltage
Open base
-40
V
VEBO
Emitter-base voltage
Open collector
-5
V
Ic
Collector current
-15
A
IB
Base current
-5
A
PC
Collector power dissipation
80
W
Tj
Junction temperature
150
Storage temperature
-55-150
Tstg
Tc=25
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Rth j-C
Thermal resistance from junction to case
Quality Semi-Conductors
VALUE
1.56
UNIT
/W
2SB757
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CBO
Collector-base breakdown voltage
lc=-0.1mA;lE=0
-40
V
V(BR)CEO
Collector-emitter breakdown voltage
lc=-10mA; IB=0
-40
V
V(BR)EBO
Emitter-base breakdown voltage
lE=-0.1mA; lc=0
-5
V
VcE(sat)
Collector-emitter saturation voltage
IC=-5A; IB=-0.5A
-0.8
V
VBE(sat)
Base-emitter saturation voltage
IC=-5A; IB=-0.5A
-1.8
V
ICBO
Collector cut-off current
VCB=-40V; IE=0
-10
uA
IEBO
Emitter cut-off current
VEB=-5V; lc=0
-100
uA
HFE
DC current gain
lc=-5A ; VCE=-2V
40
240
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
lc=-15A;lBi=-lB2=-1.5A
RL=2n;Pw=20us,Duty<2%
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