CPH5905 Ordering number : EN7177B SANYO Semiconductors DATA SHEET TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET CPH5905 High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications Features Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting efficiency greatly The CPH5905 contains a 2SK3357-equivalent chip and a 2SC4639-equivalent chip in one package Drain and emitter are shared • • • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [FET] Drain-to-Source Voltage VDSX VGDS Gate-to-Drain Voltage Gate Current Drain Current IG ID Allowable Power Dissipation PD 15 Mounted on a ceramic board (600mm2×0.8mm) V --15 V 10 mA 50 mA 350 mW [TR] Collector-to-Base Voltage VCBO VCEO VEBO Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) V 150 IB PC Collector Dissipation V V 6 IC ICP Base Current 55 50 mA 300 mA 30 mA Mounted on a ceramic board (600mm2×0.8mm) 350 mW Mounted on a ceramic board (600mm2×0.8mm) 500 mW [TR] Total Power Dissipation Junction Temperature PT Tj Storage Temperature Tstg 150 °C --55 to +150 °C Product & Package Information unit : mm (typ) 7017A-007 • Package : CPH5 • JEITA, JEDEC : SC-74A, SOT-25 • Minimum Packing Quantity : 3,000 pcs./reel 5 4 CPH5905G-TL-E CPH5905H-TL-E 0.15 2.9 3 Packing Type : TL Marking LOT No. 1E RANK 0.05 1.6 2.8 0.2 0.6 Package Dimensions 0.9 0.2 0.6 TL 1 2 0.95 0.4 1 : Collector 2 : Gate 3 : Source 4 : Emitter/Drain 5 : Base Electrical Connection 5 4 3 SANYO : CPH5 1 2 http://semicon.sanyo.com/en/network 60612 TKIM/62005AC MSIM TB-00001552/22802 TSIM TA-49 No.7177-1/8 CPH5905 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ max Unit [FET] Gate-to-Drain Breakdown Voltage V(BR)GDS IGSS VGS(off) Gate Cutoff Current Cutoff Voltage Drain Current IG=--10μA, VGS=0V VGS=--10V, VDS=0V --15 V --1.0 VDS=5V, ID=100μA VDS=5V, VGS=0V VDS=5V, VGS=0V, f=1kHz --0.4 --0.7 10.0* nA --1.5 V 32.0* mA Forward Transfer Admittance IDSS | yfs | Input Capacitance Ciss Reverse Transfer Capacitance Crss VDS=5V, VGS=0V, f=1kHz VDS=5V, VGS=0V, f=1kHzz Noise Figure NF VDS=5V, Rg=1kΩ, ID=1mA, f=1kHz ICBO IEBO VCB=35V, IE=0A 0.1 μA VEB=4V, IC=0A 0.1 μA VCE=6V, IC=1mA Gain-Bandwidth Product hFE fT VCE=6V, IC=10mA 200 Output Capacitance Cob 1.7 Collector-to-Emitter Saturation Voltage VCE(sat) VBE(sat) VCB=6V, f=1MHz IC=50mA, IB=5mA 24 35 mS 10.0 pF 2.9 pF 1.0 dB [TR] Collector Cutoff Current Emitter Cutoff Current DC Current Gain Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time 135 IC=50mA, IB=5mA 400 MHz pF 0.08 0.4 mV 0.8 1.0 V V(BR)CBO V(BR)CEO IC=10μA, IE=0A 55 V IC=1mA, RBE=∞ 50 V V(BR)EBO ton IE=10μA, IC=0A 6 tstg tf See specified Test Circuit. V 0.15 ns 0.75 ns 0.20 ns * : The CPH5905 is classified by IDSS as follows : (unit : mA) Rank IDSS G 10.0 to 20.0 H 16.0 to 32.0 The specifications shown above are for each individual FET or transistor. Switching Time Test Circuit IB1 PC=20μs D.C.≤1% OUTPUT IB2 INPUT 1kΩ RL 2kΩ VR 50Ω + 220μF VBE= --5V + 470μF VCC=20V 10IB1= --10IB2=IC=10mA Ordering Information Package Shipping CPH5905G-TL-E Device CPH5 3,000pcs./reel CPH5905H-TL-E CPH5 3,000pcs./reel memo Pb Free No.7177-2/8 CPH5905 ID -- VDS 20 [FET] ID -- VDS 20 [FET] VGS=0V 16 V V GS=0 12 Drain Current, ID -- mA Drain Current, ID -- mA 16 --0.1V --0.2V 8 --0.3V 4 --0.2V 8 --0.3V --0.4V 4 --0.4V --0.5V --0.6V --0.7V --0.1V 12 --0.5V --0.6V --0.7V 0 0 0.4 0 0.8 1.2 1.6 2.0 Drain-to-Source Voltage, VDS -- V 2.4 ID -- VGS 22 0 4 6 8 10 Drain-to-Source Voltage, VDS -- V 12 ITR02750 ID -- VGS [FET] 16 VDS=5V 20 2 ITR02749 [FET] VDS=5V IDSS=15mA 14 6 4 25 6 8 75° C 8 10 --2 5°C 10 20 m 15 A mA 10 mA S =3 0m 12 Ta = A 14 12 °C Drain Current, ID -- mA 16 ID S Drain Current, ID -- mA 18 4 2 2 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 Gate-to-Source Voltage, VGS -- V Forward Transfer Admittance, | yfs | -- mS A 30m mA =15 I DSS 3 2 10 7 5 3 --0.8 --0.6 --0.4 --0.2 Gate-to-Source Voltage, VGS -- V [FET] VDS=5V f=1kHz 5 --1.0 IT04224 | yfs | -- ID 7 0 --1.2 0.2 | yfs | -- IDSS 100 Forward Transfer Admittance, | yfs | -- mS 0 --1.4 0.2 ITR02752 [FET] VDS=5V VGS=0V f=1kHz 7 5 3 2 10 2 3 5 7 3 1.0 2 3 5 7 2 10 3 5 Drain Current, ID -- mA IT04225 VGS(off) -- IDSS [FET] 7 3 5 Drain Current, IDSS -- mA 2 IT04226 Ciss -- VDS [FET] 10 3 VDS=5V ID=100μA VGS=0V f=1MHz 2 Input Capacitance, Ciss -- pF Cutoff Voltage, VGS(off) -- V 0 1.0 7 5 3 2 10 7 5 3 7 10 2 3 5 Drain Current, IDSS -- mA IT04227 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 IT04228 No.7177-3/8 CPH5905 Crss -- VDS [FET] VDS=0V f=1MHz 7 3 2 1.0 6 4 2 7 2 1.0 3 5 7 2 10 Drain-to-Source Voltage, VDS -- V 5 7 0.1 2 3 Frequency, f -- kHz 5 7100 ITR02758 PD -- Ta [FET] [FET] VDS=5V ID=1mA f=1kHz 8 6 4 2 400 5 7 1.0 2 3 5 7 10 5 7 1.0 2 3 Signal Source Resistance, Rg -- kΩ 5 71000 ITR02759 IC -- VCE [TR] 50 5 7 10 A 50μ 0μ A 4 2 3 5 7 100 A 400μ 350 M ou 300 nt ed on 250 ac er am ic 200 bo ar 150 d (6 00 m m2 ✕ 100 0. 8m m ) 50 2 3 0 35 200μA 150μA 20 100μA 15 50μA 10 60 80 100 120 50μA 45μA 40μA 35μA 8 30μA 6 25μA 20μA 4 15μA 10μA 2 IB=0μA 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 5μA IB=0μA Collector-to-Emitter Voltage, VCE -- V 1.0 0 5 10 15 20 25 30 35 40 45 Collector-to-Emitter Voltage, VCE -- V ITR10376 IC -- VBE 160 0 0.9 [TR] hFE -- IC 2 VCE=6V 160 IT09866 [TR] 5 0 140 IC -- VCE 10 30 25 40 12 300μA 250μA 40 20 Ambient Temperature, Ta -- °C 350μA 50 45 0 2 3 0 2 3 Collector Current, IC -- mA 0 0.1 2 3 IT04229 NF -- Rg 10 0 0.01 3 Allowable Power Dissipation, PD -- mW 7 Noise Figure, NF -- dB [FET] VDS=5V ID=1mA Rg=1kΩ 8 5 5 Collector Current, IC -- mA NF -- f 10 Noise Figure, NF -- dB Reverse Transfer Capacitance, Crss -- pF 10 50 ITR10377 [TR] VCE=6V 140 DC Current Gain, hFE 100 80 60 Ta=75 °C 25°C --25°C Collector Current, IC -- mA 1000 120 40 20 0.2 0.4 0.6 0.8 5 3 Ta=75°C 2 25°C --25°C 100 7 5 0 0 7 1.0 Base-to-Emitter Voltage, VBE -- V 1.2 1.4 ITR10378 3 0.1 2 3 5 1.0 2 3 5 10 2 3 Collector Current, IC -- mA 5 100 2 3 ITR10379 No.7177-4/8 CPH5905 f T -- IC [TR] VCE=6V 3 3 2 100 7 5 2 10 7 5 3 2 3 1.0 2 3 5 7 2 10 3 5 7 Collector Current, IC -- mA 5 2 100 ITR10380 Cob -- VCB 5 [TR] 10 7 5 3 2 2 1.0 1.0 2 1.0 3 5 7 2 10 3 5 Collector-to-Base Voltage, VCB -- V VBE(sat) -- IC 10 7 100 ITR10382 1.0 7 5 3 2 0.1 5°C Ta=7 °C --25 7 5 2 3 5 7 2 10 25 3 °C 5 7 Collector Current, IC -- mA 2 100 ITR10383 PC -- Ta [TR] 400 IC / IB=10 7 [TR] Collector Dissipation, PC -- mW 350 5 3 2 1.0 Ta= --25°C 7 25°C 75°C 5 3 1.0 7 10 ITR10381 [TR] 2 2 1.0 5 7 5 IC / IB=10 3 7 5 3 VCE(sat) -- IC 3 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 7 Emitter-to-Base Voltage, VEB -- V f=1MHz 3 Output Capacitance, Cob -- pF [TR] f=1MHz 5 2 1.0 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Cib -- VEB 5 Input Capacitance, Cib -- pF Gain-Bandwidth Product, fT -- MHz 7 M ou 300 nt 250 ed on ac er am ic 200 bo ar 150 d (6 00 m 100 m2 ✕ 0. 8m m ) 50 0 2 3 5 7 10 2 3 5 Collector Current, IC -- mA 7 2 100 ITR10384 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT09867 No.7177-5/8 CPH5905 Embossed Taping Specification CPH5905G-TL-E, CPH5905H-TL-E No.7177-6/8 CPH5905 Outline Drawing CPH5905G-TL-E, CPH5905H-TL-E Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 No.7177-7/8 CPH5905 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 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Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2012. Specifications and information herein are subject to change without notice. PS No.7177-8/8