2SD1060 Ordering number : EN686K SANYO Semiconductors DATA SHEET 2SD1060 NPN Epitaxial Planar Silicon Transistor 50V / 5A Switching Applications Applications • Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching Features • Low collector-to-emitter saturation voltage : VCE(sat)=0.3V max / IC=3A, IB= 0.3A Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings Unit VCBO VCEO Collector-to-Emitter Voltage Emitter-to-Base Voltage VEBO IC ICP Collector Current Collector Current (Pulse) Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25°C 60 V 50 V 6 V 5 A 9 A 1.75 W 30 W 150 °C --55 to +150 °C Package Dimensions Product & Package Information unit : mm (typ) 7536-002 • Package : TO-220-3L • JEITA, JEDEC : SC-46, TO-220AB • Minimum Packing Quantity : 50 pcs./magazine 4.5 3.6 2.8 (1.7) 1.3 10.0 Marking 1.3 Electrical Connection 2 9.2 8.9 MAX 13.3 15.7 (0.6) D1060 1 Rank LOT No. 1.27 0.8 3 13.08 3.0 1.52 0.5 2.4 1 2 3 2.54 1 : Base 2 : Collector 3 : Emitter 2.54 SANYO : TO-220-3L http://semicon.sanyo.com/en/network 40412 TKIM TC-00002737/82207FA TIIM TC-00000844/913003TN(KT)/91098HA(KT)/D251MH/4017KI No.686-1/4 2SD1060 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time min typ ICBO IEBO VCB=40V, IE=0A VEB=4V, IC=0A hFE1 VCE=2V, IC=1A 100* hFE2 VCE=2V, IC=2A 80 fT Cob VCE=5V, IC=1A Unit max 0.1 mA 0.1 mA 280* 30 VCB=10V, f=1MHz IC=3A, IB=0.3A VCE(sat) V(BR)CBO Collector-to-Base Breakdown Voltage Ratings Conditions MHz 100 pF 0.3 V IC=1mA, IE=0A 60 V(BR)CEO V(BR)EBO ton IC=1mA, RBE=∞ 50 V 6 V tstg tf See specified Test Circuit IE=1mA, IC=0A V 0.1 μs 1.4 μs 0.2 μs * : The 2SD1060 is classified by 1A hFE as follows Rank R S hFE 100 to 200 140 to 280 Switching Time Test Circuit IB1 PW=20μs D.C.≤1% INPUT OUTPUT IB2 RB VR RL= 10Ω 50Ω + 100μF + 470μF VBE= --5V VCC=20V IC=10IB1= --10IB2=2A IC -- VCE VCE=2V 9 100mA 6 50mA 4 2 8 7 6 5 4 3 --20°C Collector Current, IC -- A 150mA Ta=8 0°C 25°C mA 45 8 IC -- VBE 10 A A 0m 0m mA A 40 35 300 250m 200mA 500 Collector Current, IC -- A 0m A 10 2 1 0 IB=0mA 0 0.4 0.8 1.2 1.6 2.0 Collector-to-Emitter Voltage, VCE -- V 2.4 ITR08436 0 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V 1.2 1.4 ITR08438 No.686-2/4 2SD1060 hFE -- IC 1000 7 3 Ta=80°C 2 25°C --20°C 100 7 5 3 2 10 0.01 2 3 5 0.1 2 3 5 2 1.0 3 5 Collector Current, IC -- A VCE(sat) -- IC 10 5 3 2 °C 25 0.1 0°C Ta=8 --20°C 5 3 2 0.01 2 3 5 2 0.1 3 5 2 1.0 3 5 ASO s 1m ms 10 2 DC op 1.0 tio era 7 n Collector Current, IC -- A s 3 5 3 2 0.1 °C 0°C 8 Ta= 3 2 C --20° 2 3 5 2 0.1 3 5 2 1.0 3 5 2 10 ITR08442 5 2 10 ITR08446 VBE(sat) -- IC 5 3 2 1.0 IC / IB=10 7 IC / IB=20 5 2 3 5 2 0.1 3 5 2 1.0 3 Collector Current, IC -- A PC -- Ta 2.0 0m IC=5A 5 25 5 2 2 10 ITR08444 10 7 0.1 7 ICP=9A 10 3 2 3 Collector Current, IC -- A 2 5 10 Base-to-Emitter Saturation Voltage, VCE(sat) -- V 1.0 1.0 Collector Current, IC -- A Collector Dissipation, PC -- W Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 3 2 0.01 2 10 ITR08440 IC / IB=20 5 IC / IB=10 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V DC Current Gain, hFE 5 VCE(sat) -- IC 10 VCE=2V 1.8 1.75 1.6 1.4 No 1.2 he at 1.0 sin k 0.8 0.6 0.4 0.2 1ms to 100ms : Single pulse 5 7 1.0 2 3 5 7 2 10 3 Collector-to-Emitter Voltage, VCE -- PC -- Tc 35 5 0 7 100 V ITR08448 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT12873 Collector Dissipation, PC -- W 30 25 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 ITR08449 No.686-3/4 2SD1060 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of April, 2012. Specifications and information herein are subject to change without notice. PS No.686-4/4