ATP213 Ordering number : ENA1526A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP213 General-Purpose Switching Device Applications Features • • • Low ON-resistance 4V drive Halogen free compliance Large current Slim package Protection diode in • • • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (PW≤10μs) Allowable Power Dissipation Unit 60 PW≤10μs, duty cycle≤1% V 50 A 150 A 50 W Channel Temperature PD Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 37 mJ 25 A Avalanche Current *2 Tc=25°C V ±20 Note : *1 VDD=10V, L=100μH, IAV=25A *2 L≤100μH, Single pulse Package Dimensions Product & Package Information unit : mm (typ) 7057-001 • Package : ATPAK • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ATP213-TL-H 1.5 6.5 0.4 0.4 0.5 4 Packing Type: TL 4.6 2.6 Marking ATP213 TL 6.05 4.6 9.5 7.3 LOT No. Electrical Connection 2.3 0.6 2.3 0.55 0.7 3 0.1 0.5 1 0.8 1.7 2,4 2 0.4 1 : Gate 2 : Drain 3 : Source 4 : Drain 1 3 SANYO : ATPAK http://semicon.sanyo.com/en/network 62012 TKIM/80509PA TK IM TC-00002021 No. A1526-1/7 ATP213 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) Forward Transfer Admittance | yfs | Static Drain-to-Source On-State Resistance Conditions Ratings min typ Unit max 60 ID=1mA, VGS=0V VDS=60V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA V 1.2 1 μA ±10 μA 2.6 V 55 RDS(on)1 RDS(on)2 VDS=10V, ID=25A ID=25A, VGS=10V 12 16 mΩ ID=13A, VGS=4.5V 15 21 mΩ RDS(on)3 ID=7A, VGS=4V 17 26 mΩ Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) Rise Time tr Turn-OFF Delay Time td(off) Fall Time tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD S 3150 VDS=20V, f=1MHz See specified Test Circuit. VDS=30V, VGS=10V, ID=50A pF 310 pF 190 pF 23 ns 170 ns 230 ns 150 ns 58 nC 10.5 nC 12.5 IS=50A, VGS=0V 1.01 nC 1.2 V Switching Time Test Circuit 10V 0V VDD=30V VIN ID=25A RL=1.2Ω VIN D PW=10μs D.C.≤1% VOUT G ATP213 P.G 50Ω S Ordering Information Device ATP213-TL-H Package Shipping memo ATPAK 3,000pcs./reel Pb Free and Halogen Free No. A1526-2/7 ATP213 ID -- VDS VGS=3.0V 20 15 0.6 0.8 1.0 1.2 1.4 1.6 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 1.8 RDS(on) -- VGS 2.0 Tc=25°C Single pulse 35 ID=7A 13A 30 25A 25 20 15 10 1 2 3 4 5 6 7 8 9 Tc= --25 °C 75° C 25° C 20 = Tc 10 7 °C 75 5 3 2 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 5 7 100 IT14841 VDD=30V VGS=10V °C 25 25 7A I D= 0V, . 4 = A =13 VGS , ID V 5 . =4 25A I D= VGS , V 0 . =10 VGS 20 15 10 5 --25 0 25 50 75 100 125 IS -- VSD 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0 0.2 0.4 0.6 0.8 1.0 1.2 Ciss, Coss, Crss -- pF tf 100 7 5 tr 3 td(on) 1.4 IT14842 Ciss, Coss, Crss -- VDS f=1MHz Ciss 3 2 150 IT14840 VGS=0V Single pulse 7 td(off) 5.0 IT14838 5 3 4.5 Diode Forward Voltage, VSD -- V SW Time -- ID 7 4.0 30 0.01 7 5 3 2 0.001 1.0 7 5 0.1 3.5 Case Temperature, Tc -- °C Source Current, IS -- A C 5° 3.0 Single pulse 100 7 5 3 2 --2 2.5 RDS(on) -- Tc 0 --50 °C 25 2 2.0 1.5 35 VDS=10V Single pulse 3 1.0 IT14839 | yfs | -- ID 100 0.5 0 Gate-to-Source Voltage, VGS -- V 10 11 12 13 14 15 16 Gate-to-Source Voltage, VGS -- V Forward Transfer Admittance, | yfs | -- S 25 IT14837 5 Switching Time, SW Time -- ns 30 Tc= 75° C 25°C --25° C 0.4 40 5 35 5 0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0.2 0 Drain-to-Source Voltage, VDS -- V 5 40 10 5 7 45 15 10 0 50 Tc= 75°C C 25 55 --25 ° 30 60 V 35 65 3.5V 6.0 Drain Current, ID -- A 40 VDS=10V Single pulse 70 4.5 V 16.0 10.0V V 8.0V 45 ID -- VGS 75 4. 0V Tc=25°C Single pulse Drain Current, ID -- A 50 2 1000 7 5 Coss 3 2 Crss 2 100 10 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 7 100 IT14843 7 0 10 20 30 40 50 Drain-to-Source Voltage, VDS -- V 60 IT14844 No. A1526-3/7 ATP213 VGS -- Qg 10 7 6 5 4 20 30 40 50 PD -- Tc 40 30 20 10 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT14847 3 5 7 10 2 3 EAS -- Ta 120 50 2 Drain-to-Source Voltage, VDS -- V IT14845 Avalanche Energy derating factor -- % Allowable Power Dissipation, PD -- W 60 Tc=25°C 0.1 Single pulse 2 3 5 7 1.0 0.1 60 μs on ati er 3 2 Total Gate Charge, Qg -- nC Operation in this area is limited by RDS(on). 3 2 1 10 10 ms 0m s 10 7 5 1.0 7 5 0μ s 10 3 2 2 0 ID=50A 10 10 op 3 PW≤10μs DC Drain Current, ID -- A 8 0 IDP=150A 100 7 5 s 1m Gate-to-Source Voltage, VGS -- V 9 ASO 3 2 VDS=30V ID=50A 5 7 100 IT14846 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No. A1526-4/7 ATP213 Taping Specification ATP213-TL-H No. A1526-5/7 ATP213 Outline Drawing ATP213-TL-H Land Pattern Example Mass (g) Unit 0.266 mm * For reference Unit: mm 6.7 6.5 1.6 2 1.5 2.3 2.3 No. A1526-6/7 ATP213 Note on usage : Since the ATP213 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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