MCH6448 Ordering number : ENA2004A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6448 Low-Voltage Driver Switching Device Applications Features • • • • ON-resistance RDS(on)1=17mΩ (typ.) 1.2V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings Unit VDSS VGSS Gate-to-Source Voltage Drain Current (DC) 20 ID IDP Drain Current (Pulse) Allowable Power Dissipation Channel Temperature PD Tch Storage Temperature Tstg V ±9 V 8 A PW≤10μs, duty cycle≤1% 32 A When mounted on ceramic substrate (1200mm2×0.8mm) 1.5 W 150 °C --55 to +150 °C Product & Package Information unit : mm (typ) 7022A-009 • Package : MCPH6 • JEITA, JEDEC : SC-88, SC-70-6, SOT-363 • Minimum Packing Quantity : 3,000 pcs./reel 2.0 6 5 0.15 0 t o 0.02 1 2 0.3 0.85 1 6 2 5 3 4 ZX TL 3 0.65 Marking LOT No. 0.25 Packing Type : TL LOT No. 0.07 MCH6448-TL-H 4 2.1 1.6 0.25 Package Dimensions Electrical Connection 1, 2, 5, 6 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain 3 SANYO : MCPH6 4 http://semicon.sanyo.com/en/network 62712 TKIM/20112PE TKIM TC-00002664 No. A2004-1/7 MCH6448 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance typ Unit max ID=1mA, VGS=0V VDS=20V, VGS=0V IGSS VGS(off) | yfs | VGS=±7.2V, VDS=0V VDS=10V, ID=4A 7.7 RDS(on)1 ID=4A, VGS=4.5V 17 22 mΩ RDS(on)2 ID=2A, VGS=2.5V 20 28 mΩ RDS(on)3 ID=1A, VGS=1.8V 26 39 mΩ RDS(on)4 ID=0.5A, VGS=1.2V 62 124 mΩ Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Turn-OFF Delay Time Ratings min V(BR)DSS IDSS Input Capacitance Rise Time Conditions 20 VDS=10V, ID=1mA V 0.3 1 μA ±10 μA 1.0 V S 705 pF 150 pF Crss 125 pF td(on) tr 6 ns 47 ns 103 ns Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=10V, f=1MHz See specified Test Circuit VDS=10V, VGS=4.5V, ID=8A IS=8A, VGS=0V 81 ns 11.2 nC 1.3 nC 2.8 nC 0.8 1.2 V Switching Time Test Circuit 4.5V 0V VDD=10V VIN ID=4A RL=2.5Ω VIN D PW=10μs D.C.≤1% VOUT G MCH6448 P.G 50Ω S Ordering Information Device MCH6448-TL-H Package Shipping memo MCPH6 3,000pcs./reel Pb Free and Halogen Free No. A2004-2/7 MCH6448 ID -- VDS 3 2 VGS=0.9V 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS -- V 60 40 20 2 3 4 5 6 Gate-to-Source Voltage, VGS -- V 3 2 25°C -Ta= 7 5 75°C 3 25°C 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A SW Time -- ID 1000 7 5 3 2 tr 10 7 5 td(on) 25°C 1.8 2.0 IT16739 VGS=1.2V, ID=0.5A 60 =2.0A .5V, I D V GS=2 40 A V, I D=1.0 V GS=1.8 20 =4.0A VGS=4.5V, ID --40 --20 0 20 40 60 80 100 120 140 160 IT16741 IS -- VSD VGS=0V 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0 0.2 0.4 0.6 0.8 1.0 Ciss, Coss, Crss -- VDS 10000 7 5 1.2 IT16743 f=1MHz 1000 7 5 Ciss 3 2 Coss 100 7 5 Crss 3 3 2 1.0 0.1 1.6 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- pF tf 3 2 1.4 3 2 td(off) 100 7 5 1.2 80 0.01 7 5 3 2 0.001 7 10 IT16742 VDD=10V VGS=4.5V 1.0 100 100 7 5 3 2 2 1.0 0.1 0.8 Ambient Temperature, Ta -- °C Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 7 5 10 0.6 RDS(on) -- Ta 0 --60 VDS=10V 7 0.4 IT16740 | yfs | -- ID 100 0.2 Gate-to-Source Voltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 2.0A 4.0A 1 0 120 1.0A 0 0 1.0 80 0 Switching Time, SW Time -- ns 2 Ta=25°C ID=0.5A 100 4 IT16738 RDS(on) -- VGS 120 6 5°C 25°C --25° C 1.0V 8 Ta= 7 1 10 --25° C 4 12 Ta= 75° C 1.2V 0 VDS=10V 14 5 0 ID -- VGS 16 Drain Current, ID -- A 2.5V 1.8V 3.0V 6 4.5V Drain Current, ID -- A 7 7.0V 8 2 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 7 100 IT16744 10 0 5 10 15 Drain-to-Source Voltage, VDS -- V 20 IT16745 No. A2004-3/7 MCH6448 VGS -- Qg 100 7 5 3 2 VDS=10V ID=8A 4.0 3.5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 4.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1 2 3 4 5 6 7 8 9 10 Total Gate Charge, Qg -- nC PD -- Ta Allowable Power Dissipation, PD -- W 1.6 11 12 IT16746 10 7 5 3 2 1.0 7 5 3 2 ASO IDP=32A (PW≤10μs) ID=8A 100 1m DC Operation in this area is limited by RDS(on). μs s 10m s 100 ope ms rati on 0.1 7 5 3 2 0.01 7 5 Ta=25°C 3 Single pulse 2 2 0.001 When mounted on ceramic substrate (1200mm ×0.8mm) 2 3 5 7 1.0 2 3 5 7 10 2 0.1 3 Drain-to-Source Voltage, VDS -- V 5 7 100 IT16747 1.5 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 Ta=25°C Single pulse When mounted on ceramic substrate (1200mm2×0.8mm) 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT16748 No. A2004-4/7 MCH6448 Taping Specification MCH6448-TL-H No. A2004-5/7 MCH6448 Outline Drawing MCH6448-TL-H Land Pattern Example Mass (g) Unit 0.008 mm * For reference Unit: mm 2.1 0.6 0.4 0.65 0.65 No. A2004-6/7 MCH6448 Note on usage : Since the MCH6448 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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