2N3904 / MMBT3904 / MMPQ3904 / PZT3904 N Discrete Power & Signal Technologies 2N3904 MMBT3904 C E C B TO-92 SOT-23 E B Mark: 1A MMPQ3904 E B E B E B SOIC-16 E PZT3904 B C C C C C C C C C E C B SOT-223 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage I C = 10 mA, IB = 0 40 V V(BR)CBO Collector-Base Breakdown Voltage I C = 10 µA, IE = 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage I E = 10 µA, I C = 0 6.0 V IBL Base Cutoff Current VCE = 30 V, VEB = 0 50 nA ICEX Collector Cutoff Current VCE = 30 V, VEB = 0 50 nA ON CHARACTERISTICS* hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage IC = 0.1 mA, VCE = 1.0 V IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 50 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 40 70 100 60 30 0.65 300 0.2 0.3 0.85 0.95 V V V V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product Cobo Output Capacitance Cibo Input Capacitance NF Noise Figure (except MMPQ3904) IC = 10 mA, VCE = 20 V, f = 100 MHz VCB = 5.0 V, IE = 0, f = 1.0 MHz VEB = 0.5 V, IC = 0, f = 1.0 MHz IC = 100 µA, VCE = 5.0 V, RS =1.0kΩ, f=10 Hz to 15.7 kHz 300 MHz 4.0 pF 8.0 pF 5.0 dB 35 ns SWITCHING CHARACTERISTICS (except MMPQ3904) td Delay Time VCC = 3.0 V, VBE = 0.5 V, tr Rise Time I C = 10 mA, IB1 = 1.0 mA 35 ns ts Storage Time VCC = 3.0 V, IC = 10mA 200 ns tf Fall Time I B1 = IB2 = 1.0 mA 50 ns *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Spice Model NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2 Isc=0 Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p Itf=.4 Vtf=4 Xtf=2 Rb=10) 2N3904 / MMBT3904 / MMPQ3904 / PZT3904 NPN General Purpose Amplifier (continued) Thermal Characteristics Symbol TA = 25°C unless otherwise noted Characteristic PD Max RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient Symbol *PZT3904 1,000 8.0 200 125 mW mW/°C °C/W °C/W Max **MMBT3904 350 2.8 357 Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Effective 4 Die Each Die RθJA Units 2N3904 625 5.0 83.3 Characteristic PD Units MMPQ3904 1,000 8.0 mW mW/°C °C/W °C/W °C/W 125 240 *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. **Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 500 V CE = 5V 400 125 °C 300 25 °C 200 - 40º C 100 0 0.1 IC 1 10 - COLLECTOR CURRENT (mA) 100 Base-Emitter Saturation Voltage vs Collector Current 1 0.8 β = 10 - 40 °C 25 °C 0.6 125 °C 0.4 0.1 1 10 I C - COLLECTOR CURRENT (mA) P 23 100 VCESAT- COLLECTOR-EMITTER VOLTAGE (V) Typical Pulsed Current Gain vs Collector Current VBE(ON)- BASE-EMITTER ON VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Characteristics VBESAT- BASE-EMITTER VOLTAGE (V) 2N3904 / MMBT3904 / MMPQ3904 / PZT3904 NPN General Purpose Amplifier Collector-Emitter Saturation Voltage vs Collector Current β = 10 0.15 125 °C 0.1 25 °C 0.05 - 40 °C 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 Base-Emitter ON Voltage vs Collector Current 1 VCE = 5V 0.8 - 40 °C 25 °C 0.6 125 °C 0.4 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 (continued) Typical Characteristics (continued) POWER DISSIPATION vs AMBIENT TEMPERATURE ICBO- COLLECTOR CURRENT (nA) Collector-Cutoff Current vs Ambient Temperature 1 P D - POWER DISSIPATION (W) 500 VCB = 30V 100 10 1 0.1 25 50 75 100 125 TA - AMBIENT TEMPERATURE ( °C) 150 0.75 SOT-223 0.5 0.25 0 0 25 50 75 100 o TEMPERATURE ( C) Test Circuits 3.0 V 275 Ω 300 ns 10.6 V Duty Cycle = 2% Ω 10 KΩ 0 - 0.5 V C1 < 4.0 pF < 1.0 ns FIGURE 1: Delay and Rise Time Equivalent Test Circuit 3.0 V 10 < t1 < 500 µs t1 10.9 V 275 Ω Duty Cycle = 2% 10 KΩ Ω 0 C1 < 4.0 pF 1N916 - 9.1 V < 1.0 ns FIGURE 2: Storage and Fall Time Equivalent Test Circuit 125 150 2N3904 / MMBT3904 / MMPQ3904 / PZT3904 NPN General Purpose Amplifier