Power Transistors 2SD1261, 2SD1261A Silicon NPN triple diffusion planar type Darlington Unit: mm For power amplification Complementary to 2SB0938 (2SB938) and 2SB0938A (2SB938A) ■ Absolute Maximum Ratings 10.0±0.3 1.5max. 1.1max. 2.0 ● High foward current transfer ratio hFE High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.5min. ● 1.0±0.1 1.5±0.1 6.0±0.5 ■ Features ● 3.4±0.3 8.5±0.2 0.8±0.1 (TC=25˚C) 0.5max. 2.54±0.3 5.08±0.5 Parameter Symbol Collector to 2SD1261 base voltage 2SD1261A Collector to 2SD1261 Ratings 60 VCBO Unit 1 2 1:Base 2:Collector 3:Emitter N Type Package 3 V 80 Collector current IC 4 A Collector power TC=25°C dissipation Ta=25°C 40 PC Junction temperature Tj Storage temperature Tstg ■ Electrical Characteristics 2SD1261 2SD1261A Collector cutoff 2SD1261 current 2SD1261A Emitter cutoff current 2SD1261 voltage 2SD1261A Forward current transfer ratio –55 to +150 ˚C ICEO min 200 200 VCE = 30V, IB = 0 500 VCE = 40V, IB = 0 500 2 60 VCE = 3V, IC = 3A 1000 fT Turn-on time ton Storage time tstg Fall time tf 2.5 IC = 3A, IB = 12mA 2 IC = 5A, IB = 20mA 4 VCC = 50V Internal Connection P 1000 to 2500 2000 to 5000 4000 to 10000 µA µA mA 10000 VCE = 3V, IC = 3A IC = 3A, IB1 = 12mA, IB2 = –12mA, Unit V 80 VCE = 10V, IC = 0.5A, f = 1MHz Rank classification max VCB = 80V, IE = 0 1000 Transition frequency typ VCB = 60V, IE = 0 VCE = 3V, IC = 0.5A hFE2 Q 1:Base 2:Collector 3:Emitter N Type Package (DS) 3 VEB = 5V, IC = 0 * VCE(sat) hFE2 Conditions hFE1 Collector to emitter saturation voltage R 2 IC = 30mA, IB = 0 VBE Rank 1 VCEO Base to emitter voltage FE2 ˚C IEBO Collector to emitter *h 5.08±0.5 150 ICBO 0 to 0.4 1.1 max. Symbol current R0.5 R0.5 2.54±0.3 (TC=25˚C) Parameter Collector cutoff 0.8±0.1 W 1.3 +0.4 A 3.0–0.2 V 8 4.4±0.5 5 ICP +0 VEBO Peak collector current 1.0±0.1 1.5–0.4 Emitter to base voltage 6.0±0.3 10.0±0.3 V 80 3.4±0.3 2.0 VCEO 4.4±0.5 emitter voltage 2SD1261A 8.5±0.2 14.7±0.5 Unit: mm 60 V V 20 MHz 0.5 µs 4 µs 1 µs C B E Note)The part numbers in the parenthesis show conventional part number. 1 Power Transistors 2SD1261, 2SD1261A PC — Ta IC — VCE IC — VBE 10 (1) 40 30 20 10 TC=25˚C 10 VCE=3V IB=4.0mA 8 3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 6 Collector current IC (A) (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (PC=1.3W) Collector current IC (A) Collector power dissipation PC (W) 50 1.0mA 0.5mA 4 2 8 25˚C 6 TC=100˚C –25˚C 4 2 (2) (3) 0 0 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 2 4 8 TC=100˚C 1 –25˚C 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 104 1000 TC=100˚C 103 25˚C –25˚C 102 0.1 0.3 1 3 t=10ms IC 3 1ms 300ms 1 0.3 0.03 0.01 1 3 10 30 2SD1261A 2SD1261 0.1 100 300 Collector to emitter voltage VCE 1000 (V) 30 10 3 0.3 1 3 10 30 Rth(t) — t Thermal resistance Rth(t) (˚C/W) 10 ICP 100 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) 102 (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 100 Collector to base voltage VCB (V) 103 Non repetitive pulse TC=25˚C 300 1 0.1 10 Collector current IC (A) Area of safe operation (ASO) 30 3.2 IE=0 f=1MHz TC=25˚C 3000 10 0.01 0.03 10 Collector output capacitance Cob (pF) Forward current transfer ratio hFE 25˚C 2.4 Cob — VCB VCE=3V 10 1.6 10000 IC/IB=250 30 3 0.8 Base to emitter voltage VBE (V) hFE — IC 100 Collector current IC (A) 0 105 100 Collector current IC (A) 2 10 Collector to emitter voltage VCE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 6 1 Time t (s) 10 102 103 104 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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