Power Transistors 2SD2215, 2SD2215A Silicon NPN triple diffusion planar type Unit: mm 7.0±0.3 For power amplification High collector to base voltage VCBO I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. ■ Absolute Maximum Ratings +0.3 1.0±0.2 1.1±0.1 10.0 –0. ● 0.8±0.2 7.2±0.3 ■ Features ● 3.5±0.2 3.0±0.2 0.85±0.1 0.75±0.1 0.4±0.1 2.3±0.2 (TC=25˚C) 4.6±0.4 2SD2215 base voltage 2SD2215A Collector to 2SD2215 350 VCBO 400 250 VCEO emitter voltage 2SD2215A Emitter to base voltage VEBO Peak collector current Collector current 300 Unit 1 2 1:Base 2:Collector 3:Emitter I Type Package 3 V 7.0±0.3 3.5±0.2 V 5 V ICP 1.5 A IC 0.75 A 2.0±0.2 0 to 0.15 dissipation Junction temperature Tj Storage temperature Tstg W 1.3 0.75±0.1 150 ˚C –55 to +150 ˚C 1 3 4.6±0.4 Symbol 2SD2215 current 2SD2215A Collector cutoff 2SD2215 current 2SD2215A Emitter cutoff current Collector to emitter 2SD2215 voltage 2SD2215A Forward current transfer ratio Conditions min typ 1:Base 2:Collector 3:Emitter I Type Package (Y) max VCE = 350V, VBE = 0 1 VCE = 400V, VBE = 0 1 VCE = 150V, IB = 0 1 VCE = 200V, IB = 0 1 IEBO VEB = 5V, IC = 0 1 VCEO IC = 30mA, IB = 0 hFE1* VCE = 10V, IC = 0.3A 70 hFE2 VCE = 10V, IC = 1A 10 ICES ICEO 0.9±0.1 0 to 0.15 2 (TC=25˚C) Parameter Collector cutoff 0.5 max. 1.1±0.1 2.3±0.2 ■ Electrical Characteristics 1.0 1.0 max. 7.2±0.3 2.5 15 PC Ta=25°C 10.2±0.3 3.0±0.2 Collector power TC=25°C Unit: mm 1.0 Collector to Ratings 2.5±0.2 Symbol 2.5±0.2 Parameter 250 Unit mA mA mA V 300 250 Base to emitter voltage VBE VCE = 10V, IC = 1A 1.5 V Collector to emitter saturation voltage VCE(sat) IC = 1A, IB = 0.2A 1 V Transition frequency fT VCE = 5V, IC = 0.5A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf *h FE1 IC = 1A, IB1 = 0.1A, IB2 = – 0.1A, VCC = 50V 30 MHz 0.5 µs 2 µs 0.5 µs Rank classification Rank Q P hFE1 70 to 150 120 to 250 1 Power Transistors 2SD2215, 2SD2215A PC — Ta IC — VCE 1.0 10 5 IB=14mA 12mA 10mA 0.8 8mA 0.6 6mA 0.4 4mA 0.2 2mA 25˚C TC=100˚C –25˚C 2.4 1.6 0.8 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 2 4 6 8 10 12 0 Collector to emitter voltage VCE (V) VCE(sat) — IC hFE — IC 3000 1000 1 25˚C –25˚C 0.1 0.03 0.03 0.1 0.3 1 1.6 300 100 TC=100˚C 25˚C –25˚C 30 10 3 0.1 0.3 1 3 VCE=10V f=10MHz TC=25˚C 300 100 30 10 3 1 0.1 0.001 0.003 0.01 0.03 10 Collector current IC (A) Area of safe operation (ASO) 0.1 0.3 Collector current IC (A) Rth(t) — t Non repetitive pulse TC=25˚C 3 ICP IC 1 t=1ms 10ms 0.3 DC 0.1 2SD2215 0.01 0.003 2SD2215A 0.03 0.001 1 3 10 30 100 300 Collector to emitter voltage VCE 1000 (V) Thermal resistance Rth(t) (˚C/W) 1000 10 Note: Rth was measured at Ta=25˚C and under natural convection. (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) 100 (2) 10 1 0.1 10–3 2.4 0.3 1 0.01 0.03 3 2.0 fT — IC Transition frequency fT (MHz) Forward current transfer ratio hFE TC=100˚C 0.01 0.01 1.2 VCE=10V 3 0.3 0.8 1000 IC/IB=10 10 0.4 Base to emitter voltage VBE (V) 10000 Collector current IC (A) Collector current IC (A) 3.2 (2) 0 2 VCE=10V Collector current IC (A) (1) 15 4.0 TC=25˚C (1) TC=Ta (2) Without heat sink (PC=1.3W) 0 Collector to emitter saturation voltage VCE(sat) (V) IC — VBE 1.2 Collector current IC (A) Collector power dissipation PC (W) 20 10–2 10–1 1 10 Time t (s) 102 103 104 1 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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