Up to 4 GHz Linear Power Silicon␣ Bipolar Transistor Technical Data AT-64023 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0␣ GHz 26.5 dBm Typical P1 dB at 4.0␣ GHz The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO flange package for good thermal characteristics. This device is designed for use in medium power, wide band amplifier and oscillator applications operating over VHF, UHF and microwave frequencies. • High Gain at 1 dB Compression: 12.5 dB Typical G1 dB at 2.0␣ GHz 9.5 dB Typical G1 dB at 4.0␣ GHz • 35% Total Efficiency • Emitter Ballast Resistors • Hermetic, Metal/Beryllia Stripline Package 230 mil BeO Package Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metallization in the fabrication of these devices. The use of ion-implanted ballast resistors ensures uniform current distribution through the multiple emitter fingers. 4-183 5965-8916E AT-64023 Absolute Maximum Ratings Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2,3] Junction Temperature Storage Temperature Units V V V mA W °C °C Absolute Maximum[1] 2.2 40 20 200 3 200 -65 to 200 Thermal Resistance [2,4]: θjc = 40°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 25 mW/°C for TC > 80°C. 4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications, TA = 25°C Symbol Parameters and Test Conditions Units |S21E|2 Insertion Power Gain; VCE = 16 V, IC = 110 mA f = 2.0 GHz f = 4.0 GHz dB P1 dB Power Output @ 1 dB Gain Compression VCE = 16 V, IC = 110 mA 1 dB Compressed Gain; VCE = 16 V, IC = 110 mA f = 2.0 GHz f= 4.0 GHz f = 2.0 GHz f = 4.0 GHz dBm f = 4.0 GHz % G1 dB ηT Total at 1 dB Compression: VCE = 16 V, IC = 110 mA hFE ICBO IEBO Forward Current Transfer Ratio; VCE = 8 V, IC = 110 mA Collector Cutoff Current; VCB = 16 V Emitter Cutoff Current; VEB = 1 V Efficiency[1] Note: 1. ηT = (RF Output Power)/(RF Input Power + VCE I C). 4-184 Min. 6.5 2.0 25.5 dB 7.0 — µA µA Typ. Max. 27.5 26.5 12.5 9.5 35.0 20 50 200 100 5.0 AT-64023 Typical Performance, TA = 25°C 29 18 30 POUT 150 mA 110 mA 26 12 150 mA 110 mA 70 mA 9 25 70 mA 24 1.0 2.0 3.0 6 1.0 4.0 FREQUENCY (GHz) 20 ηT 15 30 10 20 5 10 0 2.0 3.0 4.0 0 0 5 FREQUENCY (GHz) Figure 1. Power Output @ 1 dB Gain Compression vs. Frequency and Collector Current. VCE = 16 V. 10 15 20 25 POWER IN (dBm) Figure 2. 1 dB Compressed Gain vs. Frequency and Collector Current. VCE= 16 V. Figure 3. Output Power and Efficiency vs. Input Power. VCE = 16 V, IC = 110mA, f = 4.0 GHz. 35 30 MSG GAIN (dB) 25 20 15 MAG |S21E|2 10 5 0 0.1 0.3 0.5 1.0 3.0 5.0 FREQUENCY (GHz) Figure 4. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VCE = 16 V, IC = 110 mA. Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 16 V, IC␣ =␣ 110 mA Freq. GHz 0.1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Mag. .54 .80 .80 .80 .78 .77 .73 .66 .60 .55 .54 S11 Ang. -124 -178 162 147 133 127 116 106 99 98 99 dB 28.2 17.6 11.9 8.6 6.3 5.1 3.8 2.9 2.2 1.4 0.6 S21 Mag. 25.71 7.57 3.92 2.70 2.07 1.80 1.56 1.40 1.28 1.18 1.07 Ang. 135 78 47 21 -4 -24 -51 -79 -109 -141 -175 dB -33.3 -29.5 -28.6 -27.9 -27.6 -25.5 -25.0 -25.8 -27.2 -31.2 -40.9 S12 Mag. .022 .034 .037 .040 .042 .053 .056 .051 .044 .028 .009 A model for this device is available in the DEVICE MODELS section. S-parameters at other bias conditions are available on the Hewlett-Packard Design Pak disk. 4-185 40 S22 Ang. 42 18 10 12 1 -5 -20 -28 -49 -70 -144 Mag. .72 .33 .33 .40 .48 .58 .67 .78 .86 .93 .93 Ang. -51 -119 -142 -156 -169 -178 170 156 142 127 112 EFFICIENCY (%) 27 G1 dB (dB) P1 dB (dBm) 15 POWER OUT (dBm) 25 28 230 mil BeO Package Dimensions .725 ± .030 18.42 ± .76 4 EMITTER .050 1.27 .800 20.32 BASE COLLECTOR .562 14.27 3 1 .120 3.05 .130 3.30 EMITTER 2 .230 5.84 .130 ± .010 3.30 ± .25 .004 ± .002 .10 ± .05 Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 3. Base of package is electrically isolated. .060 1.52 4-186