DP500 Semiconductor PNP Silicon Transistor Description • Extremely low collector-to-emitter saturation voltage ( VCE(SAT)=-0.2V Typ. @IC /IB =-3A/-150mA) • Suitable for low voltage large current drivers • Excellent hFE Linearity • Complementary pair with DN500 Ordering Information Type NO. DP500 Marking DP500 Outline Dimensions Package Code T-92 unit : mm PIN Connections 1. Emitter 2. Collector 3. Base KST-9091-000 1 DP500 Absolute maximum ratings (Ta=25° C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -15 V Collector-Emitter voltage VCEO -12 V Emitter-Base voltage VEBO -5 V Collector current IC -5 A Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature T stg -55~150 °C * : When mounted on 40×40×0.8mm ceramic substate Electrical Characteristics Characteristic (Ta=25° C) Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=-50µA, I E =0 -15 - - V Collector-Emitter breakdown voltage BVCEO IC=-1mA, IB=0 -12 - - V Emitter-Base breakdown voltage BVEBO IE =-50µA, IC =0 -5 - - V Collector cut-off current ICBO VCB=-12V, I E =0 - - -1 µA Emitter cut-off current IEBO VEB =-5V, IC =0 - - -1 µA 120 - 700 - 40 - - - * DC current gain h FE1 VCE=-1V, IC =-100mA h FE2 VCE=-1V, IC =-3A Collector-Emitter on voltage VCE(sat1) IC=-3A, IB =-150mA - - -0.3 V Base-Emitter on voltage VBE(sat) IC=-3A, IB =-150mA - - -1.2 V fT VCB=-5V, I C=-500mA - 150 - MHz VCB=-10V, I E =0, f=1MHz - - 50 pF Transition frequency Collector output capacitance C ob * : h FE rank / O : 120 ~ 240, Y : 200 ~ 400, G : 350 ~ 700 KST-9091-000 2 DP500 Electrical Characteristic Curves Fig. 1 Pc - Ta Fig. 3 hFE - IC Fig. 2 Ic - VBE Fig. 4 VCE(sat) - IC KST-9091-000 3