KODENSHI DP030U

DP030U
Semiconductor
PNP Silicon Transistor
Features
• Extremely low collector-to-emitter saturation voltage
( VCE(SAT)= -0.15V Typ. @IC /IB =-100mA/-10mA)
• Suitable for low voltage large current drivers
• Excellent hFE Linearity
• Complementary pair with DN030U
• Switching Application
Ordering Information
Type NO.
Marking
DP030U
Package Code
P01
SOT-323F
Outline Dimensions
unit : mm
2.1±0.1
0.30~0.40
3
2
+0.1
0.70-0.15
1.30 BSC
1
0~0.1
0.11±0.05
2.0±0.1
1.30±0.1
PIN Connections
1. Base
2. Emitter
3. Collector
KST-3055-000
1
DP030U
Absolute maximum ratings
(Ta=25° C)
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
VCBO
-15
V
Collector-Emitter voltage
VCEO
-12
V
Emitter-Base voltage
VEBO
-5
V
Collector current
IC
-300
mA
Collector dissipation
PC
200
mW
Junction temperature
Tj
150
°C
Storage temperature
T stg
-55~150
°C
Electrical Characteristics
Characteristic
(Ta=25° C)
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Collector-Base breakdown voltage
BVCBO
IC=-50µA, I E =0
-15
-
-
V
Collector-Emitter breakdown voltage
BVCEO
IC=-1mA, IB=0
-12
-
-
V
Emitter-Base breakdown voltage
BVEBO
IE =-50µA, IC =0
-5
-
-
V
Collector cut-off current
ICBO
VCB=-12V, I E =0
-
-
-0.1
µA
Emitter cut-off current
IEBO
VEB =-5V, IC =0
-
-
-0.1
µA
h FE1
VCE=-1V, IC =-100mA
200
-
450
-
h FE2
VCE=-1V, IC =-300mA
70
-
-
-
DC current gain
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Transition frequency
Collector output capacitance
VCE(sat1)
IC=-100mA, IB =-10mA
-
-
-0.2
V
VCE(sat2)
IC=-300mA, IB =-30mA
-
-
-0.5
V
VBE(sat1)
IC=-100mA, IB =-10mA
-
-
-1.2
V
VBE(sat2)
IC=-300mA, IB =-30mA
-
-
-1.7
V
VCE=-5V, IC =-10mA
-
350
-
MHz
VCB=-10V, I E =0, f=1MHz
-
4
-
pF
fT
C ob
KST-3055-000
2
DP030U
Electrical Characteristic Curves
Fig. 1 PC - Ta
Fig. 2 IC-VBE
1V
Fig. 3 hFE - IC
Fig. 4 IC - VCE
Eohhfie
Fig. 5 VCE(sat) - IC
KST-3055-000
3