AUK STD123S

STD123S
Semiconductor
NPN Silicon Transistor
Features
•
•
•
•
•
Low saturation medium current application
Extremely low collector saturation voltage
Suitable for low voltage large current drivers
High DC current gain and large current capability
Low on resistance : RON=0.6Ω(Max.) (IB=1mA)
Ordering Information
Type NO.
Marking
STD123S
Package Code
123
SOT-23
Outline Dimensions
unit : mm
2.4±0.1
1.30±0.1
2.9±0.1
1.90 Typ.
1
3
0.4 Typ.
2
0.45~0.60
-0.03
0.124 +0.05
0~0.1
0.38
1.12 Max.
0.2 Min.
KST-2059-002
PIN Connections
1. Base
2. Emitter
3. Collector
1
STD123S
(Ta=25°°C)
Absolute maximum ratings
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
VCBO
20
V
Collector-Emitter voltage
VCEO
15
V
Emitter-Base voltage
VEBO
6.5
V
IC
1
A
350
mW
Collector current
Collector dissipation
PC
*
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55~150
°C
* : Package mounted on 99.5% alumina 10×8×0.1mm
(Ta=25°°C)
Electrical Characteristics
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Unit
Collector-Base breakdown voltage
BVCBO
IC=50µA, IE=0
20
-
-
V
Collector-Emitter breakdown voltage
BVCEO
IC=1mA, IB=0
15
-
-
V
Emitter-Base breakdown voltage
BVEBO
IE=50µA, IC=0
6.5
-
-
V
Collector cut-off current
ICBO
VCB=20V, IE=0
-
-
0.1
µA
Emitter cut-off current
IEBO
VEB=6V, IC=0
-
-
0.1
µA
DC current gain
hFE
VCE=1V, IC=100mA
150
-
-
-
IC=500mA, IB=50mA
-
0.1
0.3
V
VCE=5V, IC=50mA
-
260
-
MHz
Collector-Emitter saturation voltage
Transistor frequency
VCE(sat)
fT
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
-
5
-
pF
On resistance
RON
f=1KHz, IB=1mA, VIN=0.3V
-
0.6
-
Ω
KST-2059-002
2
STD123S
Electrical Characteristic Curves
Fig. 1 PC - Ta
Fig. 2 COb-VCB
Fig. 2 VCE(sat)-IC
Fig. 4hFE-IC
Fig. 5 RON-IB
KST-2059-002
3