STD1766 Semiconductor NPN Silicon Transistor Descriptions • Medium power amplifier Features • PC(Collector dissipation)=2W (Ceramic substate of 40×40×0.8mm used) • Low collector saturation voltage : VCE(sat)=0.5V(Typ.) • Complementary pair with STB1188 Ordering Information Type NO. Marking STD1766 Package Code SOT-89 B2 : hFE rank, monthly code Outline Dimensions unit : mm 4.0 0.50±0.1 2.5 -0.3 +0.5 -0.3 +0.2 1.00±0.3 KST-8006-001 -0.02 +0.04 0.42 0~0.1 1.5 -0.1 +0.2 0.42±0.05 1 0.15 Typ. 2 0.52±0.05 4.5 -0.1 +0.2 1.82±0.05 3 PIN Connections 1. Base 2. Collector 3. Emitter 1 STD1766 (Ta=25°°C) Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 40 V Collector-Emitter voltage VCEO 32 V Emitter-Base voltage VEBO 5 V IC 2 A PC 0.5 Collector current Collector dissipation PC * W 2 Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C * : When mounted on 40×40×0.8mm ceramic substate (Ta=25°°C) Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=50µA, IE=0 40 - - V Collector-Emitter breakdown voltage BVCEO IC=1mA, IB=0 32 - - V Emitter-Base breakdown voltage BVEBO IE=50µA, IC=0 5 - - V Collector cut-off current ICBO VCB=20V, IE=0 - - 1 µA Emitter cut-off current IEBO VEB=4V, IC=0 - - 1 µA DC current gain hFE* VCE=3V, IC=0.5A 100 - 320 - Collector-Emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) IC=2A, IB=200mA - 0.5 0.8 V fT VCB=5V, IC=500mA - 100 - MHz VCB=10V, IE=0, f=1MHz - 30 - pF Cob * : hFE rank / O : 100~200, Y : 160~320 KST-8006-001 2 STD1766 Electrical Characteristic Curves Fig. 2 IC - VBE Fig. 1 PC - Ta Fig. 3 I C - VCE Fig. 5 hFE - Fig. 4 VCE(sat) - IC IC KST-8006-001 3