AUK STD1664

STD1664
Semiconductor
NPN Silicon Transistor
Description
• Medium power amplifier application
Features
• PC(Collector dissipation)=2W(Ceramic substate of 40×40×0.8mm used)
• Low collector saturation voltage : VCE(sat)=0.15V(Typ.)
• Complementary pair with STB1132
Ordering Information
Type NO.
Marking
STD1664
Package Code
A2
SOT-89
: hFE rank, monthly code
Outline Dimensions
unit : mm
4.0
0.50±0.1
2.5
-0.3
+0.5
-0.3
+0.2
1.00±0.3
KST-8004-001
-0.02
+0.04
0.42
0~0.1
1.5
-0.1
+0.2
0.42±0.05
1
0.15 Typ.
2
0.52±0.05
4.5
-0.1
+0.2
1.82±0.05
3
PIN Connections
1. Base
2. Collector
3. Emitter
1
STD1664
(Ta=25°°C)
Absolute maximum ratings
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
VCBO
40
V
Collector-Emitter voltage
VCEO
32
V
Emitter-Base voltage
VEBO
5
V
IC
1
A
PC
0.5
PC*
2
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55~150
°C
Collector current
Collector dissipation
W
* : When mounted on 40×40×0.8mm ceramic substate
(Ta=25°°C)
Electrical Characteristics
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Unit
Collector-Base breakdown voltage
BVCBO
IC=50µA, IE=0
40
-
-
V
Collector-Emitter breakdown voltage
BVCEO
IC=1mA, IB=0
32
-
-
V
Emitter-Base breakdown voltage
BVEBO
IE=50µA, IC=0
5
-
-
V
Collector cut-off current
ICBO
VCB=20V, IE=0
-
-
0.5
µA
Emitter cut-off current
IEBO
VEB=4V, IC=0
-
-
0.5
µA
DC current gain
hFE*
VCE=3V, IC=0.1A
100
-
320
-
IC=500mA, IB=50mA
-
0.15
0.4
V
VCE=5V, IC=50mA
-
150
-
MHz
VCB=10V, IE=0, f=1MHz
-
15
-
pF
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
VCE(sat)
fT
Cob
* : hFE rank / O : 100 ~ 200, Y : 160 ~ 320
KST-8004-001
2
STD1664
Electrical Characteristic Curves
Fig. 1 PC - Ta
Fig. 2 IC - VBE
Fig. 3 IC - VCE
Fig. 5 hFE -
Fig. 4 VCE(sat) - IC
IC
KST-8004-001
3