SAMHOP STM8300

STM8300
S a mHop Microelectronics C orp.
Ver 1.0
Dual Enhancement Mode Field Effect Transistor ( N and P Channel )
PRODUCT SUMMARY (N-Channel)
PRODUCT SUMMARY (P-Channel)
R DS(ON) (m Ω) Max
V DSS
ID
30V
5.3A
V DSS
ID
-30V
-4.7A
R DS(ON) (m Ω) Max
46 @ VGS=10V
56 @ VGS=-10V
65 @ VGS=4.5V
90 @ VGS=-4.5V
S O-8
1
D2
5
4
G2
D2
6
3
S2
D1
7
2
G1
D1
8
1
S1
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID
Drain Current-Continuous
TA=25°C
TA=70°C
IDM
P-Channel
Units
30
-30
V
±20
±20
V
5.3
-4.7
A
4.2
-3.8
A
19
-17
A
N-Channel
-Pulsed
a
b
a
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
TA=25°C
2.0
W
TA=70°C
1.28
W
-55 to 150
°C
62.5
°C/W
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
a
Details are subject to change without notice.
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STM8300
Ver 1.0
N-Channel ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
Conditions
Min
30
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
IDSS
Zero Gate Voltage Drain Current
VDS=24V , VGS=0V
IGSS
Gate-Body Leakage Current
VGS= ±20V , VDS=0V
V
1
uA
±100
nA
1.6
3
V
ON CHARACTERISTICS
VDS=VGS , ID=250uA
VGS(th)
Gate Threshold Voltage
RDS(ON)
Drain-Source On-State Resistance
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
tr
Rise Time
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Qgd
Gate-Source Charge
VGS=10V , ID=5.3A
38
46
m ohm
VGS=4.5V , ID=4.5A
48
65
m ohm
VDS=5V , ID=5.3A
10
S
310
pF
73
pF
44
pF
VDD=15V
ID=1A
VGS=10V
RGEN=6 ohm
7.5
ns
9.5
ns
16
13
ns
ns
VDS=15V,ID=5.3A,VGS=10V
5.3
2.8
0.9
1.2
nC
nC
c
COSS
tD(OFF)
1
VDS=15V,VGS=0V
f=1.0MHz
c
VDS=15V,ID=5.3A,VGS=4.5V
VDS=15V,ID=5.3A,
VGS=10V
Gate-Drain Charge
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
IS
VSD
Maximum Continuous Drain-Source Diode Forward Current
Diode Forward Voltage
b
VGS=0V,IS=1A
0.79
1
A
1.2
V
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STM8300
Ver 1.0
P-Channel ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RDS(ON)
Drain-Source On-State Resistance
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS
CISS
COSS
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Total Gate Charge
Qgs
Qgd
Gate-Source Charge
Gate-Drain Charge
Min
VGS=0V , ID=-250uA
-30
Typ
-1
±100
VGS= ±20V , VDS=0V
-1.0
-1.8
-3.0
uA
nA
46
56
V
m ohm
VGS=-4.5V , ID=-3.7A
68
90
m ohm
VDS=-5V , ID=-4.7A
7.5
S
520
125
pF
pF
pF
VDS=-15V,VGS=0V
f=1.0MHz
78
c
Diode Forward Voltage b
ns
ns
ns
ns
VDD=-15V
ID=-1A
VGS=-10V
RGEN=6 ohm
7.5
12.4
VDS=-15V,ID=-4.7A,VGS=-10V
10.3
nC
VDS=-15V,ID=-4.7A,VGS=-4.5V
5.2
1.1
2.8
nC
VDS=-15V,ID=-4.7A,
VGS=-10V
62
37
DRAIN-SOURCE DIODE CHARACTERISTICS
Maximum Continuous Drain-Source Diode Forward Current
IS
VSD
Units
V
VDS=-24V , VGS=0V
VDS=VGS , ID=-250uA
VGS=-10V , ID=-4.7A
Max
c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Conditions
VGS=0V,IS=-1A
-0.77
nC
nC
-1
A
-1.2
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 2%.
_ 300us, Duty Cycle <
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
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STM8300
Ver 1.0
N-Channel
15
25
VG S =4.5V
VG S =10V
VG S =4V
I D, Drain Current(A)
I D, Drain Current(A)
20
VG S =3.5V
15
10
VG S =3V
5
VG S =2.5V
12
9
25 C
6
T j=125 C
3
-55 C
0
0
0.5
1
2
1.5
2.5
0
0.0
3
V DS, Drain-to-Source Voltage(V)
3.5
2.8
4.2
2.0
R DS(on), On-Resistance
Normalized
65
V G S =4.5V
RDS(on)(m Ω)
2.1
Figure 2. Transfer Characteristics
78
52
39
V G S =10V
26
13
1
5
10
15
20
1.8
V GS =4.5V
I D =4.5A
1.6
1.4
1.2
V GS =10V
I D =5.3A
1.0
0.8
25
0
25
75
50
100
125
150
T j ( °C )
ID, Drain Current(A)
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.4
BVDSS, Normalized
Drain-Source Breakdown Voltage
1.6
Vth, Normalized
Gate-Source Threshold Voltage
1.4
VGS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
0
0.7
V DS =V G S
I D =250uA
1.2
1.0
0.8
0.6
0.4
-55 -25
0
25
50
75
100 125 150
Tj, Junction Temperature( ° C )
1.15
1.10
I D =250uA
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75 100 125 150
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
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STM8300
Ver 1.0
20
90
Is, Source-drain current(A)
I D =5.3A
RDS(on)(m Ω)
75
T J = 125 C
60
45
25 C
75 C
30
15
0
0
2
4
6
8
75 C
T J = 125 C
0.3
0.6
0.9
1.2
1.5
V GS, Gate-to-Source Voltage(V)
V SD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
V GS, Gate to Source Voltage(V)
500
C, Capacitance(pF)
25 C
1.0
0
10
600
400
Ciss
300
200
Coss
100
Crss
0
0
5
10
15
20
25
VDS=15V
ID=5.3A
8
6
4
2
0
30
0
4
5
6
7
Figure 9. Capacitance
Figure 10. Gate Charge
70
100
60
10
T D(off)
Tr
Tf
10
T D(on)
V DS =15V ,ID=1A
6 10
RD
Rg, Gate Resistance(Ω)
)L
im
8
it
10
1m
1
0.1
60 100 300 600
ON
S(
10
0.1
V G S =10V
1
3
2
Qg, Total Gate Charge(nC)
250
1
1
V DS, Drain-to-Source Voltage(V)
I D, Drain Current(A)
Switching Time(ns)
10
DC
0u
s
s
10
ms
0m
s
V G S =10V
S ingle P ulse
T A =25 C
1
10
30
50
V DS, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Jul,31,2008
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STM8300
Ver 1.0
V ( BR )D S S
15V
tp
L
VDS
D R IVE R
D .U .T
RG
+
- VD D
IA S
A
20V
tp
0.0 1
IAS
Unclamped Inductive Test Circuit
Unclamped Inductive Waveforms
F igure 13a.
F igure 13b.
Normalized Transient
Thermal Resistance
10
1
0.5
0.2
0.1
0.1
P DM
0.05
t1
t2
0.02
0.01
0.00001
1.
2.
3.
4.
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
10
R ӰJ A (t)=r (t) * R ӰJ A
R ӰJ A =S ee Datas heet
T J M-T A = P DM* R ӰJ A (t)
Duty C ycle, D=t1/t2
100
1000
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STM8300
Ver 1.0
P-Channel
15
15
VGS=4V
VGS=10V
-I D, Drain Current(A)
-I D, Drain Current(A)
12
VGS=3.5V
9
6
VGS=3V
3
12
9
125 C
6
25 C
3
-55 C
0
0
0
0.5
1
1.5
2
2.5
0
3
-V DS, Drain-to-Source Voltage(V)
100
1.4
R DS(on), On-Resistance
Normalized
RDS(on)(m Ω)
1.5
V G S =-4.5V
60
V G S =-10V
20
1
1
3
6
9
12
3.6
4.5
5.4
VGS=-4.5V
ID=-3.7A
1.3
VGS=-10V
ID=-4.7A
1.2
1.1
1.0
0
15
0
50
25
75
100
125
150
T j ( °C )
-ID, Drain Current(A)
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with Drain
Current and Temperature
BVDSS, Normalized
Drain-Source Breakdown Voltage
1.2
Vth, Normalized
Gate-Source Threshold Voltage
2.7
Figure 2. Transfer Characteristics
120
40
1.8
-V GS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
80
0.9
VDS=VGS
ID=-250uA
1.1
1.0
0.9
0.8
0.7
0.6
0.5
-50 -25
0
25
50
75
100 125 150
Tj, Junction Temperature( ° C )
1.3
I D =-250uA
1.2
1.1
1.0
0.9
0.8
0.7
-50
-25
0
25
50
75
100 125 150
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
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STM8300
Ver 1.0
120
20.0
-Is, Source-drain current(A)
I D= - 4 . 7 A
R DS(on)(m Ω)
100
80
125 C
60
75 C
25 C
40
20
0
2
0
4
8
6
10.0
125 C
25 C
75 C
1.0
10
0
-VGS, Gate-to-Source Voltage(V)
0.9
1.2
1.5
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
-V GS, Gate to Source Voltage(V)
900
750
C, Capacitance(pF)
0.6
-VSD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
600
Ciss
450
300
Coss
150
Crss
0
0
5
10
15
20
25
V DS= - 1 5 V
I D= - 4 . 7 A
8
6
4
2
0
30
0
2
4
6
8
10
12
14
V DS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
16
70
100
60
T D(off)
-ID, Drain Current(A)
250
Switching Time(ns)
0.3
Tr
Tf
10
T D(on)
V D S = -15V,I D=-1A
1
6 10
R
0.1
60 100 300 600
Rg, Gate Resistance(Ω)
(O
DS
N)
L im
it
10
1m
1
0.1
V G S = -10 V
1
10
DC
10
1 0 ms
0m
s
0u
s
s
V G S =10V
S ingle P ulse
T A =25 C
1
10
30
50
-VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Figure 11. switching characteristics
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STM8300
Ver 1.0
V ( BR )D S S
15V
tp
D R IVE R
L
VDS
D .U .T
RG
+
- VD D
IA S
A
20V
tp
0.0 1
IAS
Unclamped Inductive Test Circuit
Unclamped Inductive Waveforms
F igure 13a.
F igure 13b.
Normalized Transient
Thermal Resistance
10
0.5
1
0.2
0.1
P DM
0.05
0.1
t1
t2
0.02
1. RthJA (t)=r (t) * R th JA
2. R thJA=See Datasheet
3. TJM-TA = PDM* R thJA (t)
4. Duty Cycle, D=t1/t2
0.01
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
10
100
1000
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STM8300
Ver 1.0
PACKAGE OUTLINE DIMENSIONS
SO-8
1
L
E
D
A
C
0.015X45±
B
A1
e
0.008
TYP.
0.016 TYP.
0.05 TYP.
H
MILLIME T E R S
INC HE S
S Y MB OLS
MIN
A
A1
D
E
H
L
1.35
0.10
4.80
3.81
5.79
0.41
0±
MAX
1.75
0.25
4.98
3.99
6.20
1.27
8±
MIN
0.053
0.004
0.189
0.150
0.228
0.016
0±
MAX
0.069
0.010
0.196
0.157
0.244
0.050
8±
Jul,31,2008
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STM8300
Ver 1.0
SO-8 Tape and Reel Data
SO-8 Carrier Tape
P1
D1
P2
B0
E
E2
E1
A
A0
A
P0
D0
TERMINAL NUMBER 1
T
SECTION A-A
K0
FEEDING DIRECTION
unit:р
PACKAGE
A0
SOP 8N
150п
6.50
²0.15
B0
K0
D0
D1
E
5.25
²0.10
2.10
²0.10
ӿ1.5
(MIN)
ӿ1.55
²0.10
12.0
+0.3
- 0.1
E1
1.75
²0.10
E2
P0
P1
P2
T
5.5
²0.10
8.0
²0.10
4.0
²0.10
2.0
²0.10
0.30
²0.013
SO-8 Reel
W1
S
K
V
M
N
G
R
H
W
UNIT:р
TAPE SIZE
12 р
REEL SIZE
M
N
W
W1
H
ӿ330
330
² 1
62
²1.5
12.4
+ 0.2
16.8
- 0.4
ӿ12.75
+ 0.15
K
S
G
R
V
2.0
²0.15
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