DIOTEC BCP28

BCP 28, BCP 48
Darlington Transistors
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
PNP
Power dissipation – Verlustleistung
±0.2
6.5
±0.1
3
1.65
2.3
2
±0.2
3.5
±0.3
7
0.7
1.5 W
Plastic case
Kunststoffgehäuse
4
1
PNP
3
3.25
Dimensions / Maße in mm
1 = B1 2, 4 = C 3 = E2
SOT-223
Weight approx. – Gewicht ca.
0.04 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25/C)
Grenzwerte (TA = 25/C)
BCP 28
BCP 48
Collector-Emitter-voltage
B open
- VCE0
30 V
60 V
Collector-Base-voltage
E open
- VCB0
40 V
80 V
Emitter-Base-voltage
C open
- VEB0
10 V
Power dissipation – Verlustleistung
Ptot
1.5 W 1)
Collector current – Kollektorstrom (DC)
- IC
500 mA
Peak Collector current – Kollektor-Spitzenstrom
- ICM
800 mA
Base current – Basisstrom (DC)
- IB
100 mA
Peak Base current – Basisstrom
- IBM
200 mA
Junction temperature – Sperrschichttemperatur
Tj
150/C
Storage temperature – Lagerungstemperatur
TS
- 65…+ 150/C
Characteristics (Tj = 25/C)
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
Collector-Base cutoff current – Kollektorreststrom
IE = 0, - VCB = 30 V
BCP 28
- ICB0
–
–
100 nA
IE = 0, - VCB = 60 V
BCP 48
- ICB0
–
–
100 nA
IE = 0, - VCB = 30 V, TA = 150/C
BCP 28
- ICB0
–
–
10 :A
IE = 0, - VCB = 60 V, TA = 150/C
BCP 48
- ICB0
–
–
10 :A
- IEB0
–
–
100 nA
Emitter-Base cutoff current – Emitterreststrom
IC = 0, - VEB = 4 V
1
) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2
01.11.2003
Darlington Transistors
BCP 28, BCP 48
Characteristics (Tj = 25/C)
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
–
–
1V
–
–
1.5 V
Collector saturation volt. – Kollektor-Sättigungsspg. 1)
- IC = 100 mA, - IB = 0.1 mA
- VCEsat
Base saturation voltage – Basis-Sättigungsspannung 1)
- IC = 100 mA, - IB = 0.1 mA
- VBEsat
DC current gain – Kollektor-Basis-Stromverhältnis 1)
- VCE = 1 V, - IC = 0.1 mA
- VCE = 5 V, - IC = 10 mA
- VCE = 5 V, - IC = 100 mA
- VCE = 5 V, - IC = 500 mA
BCP 28
hFE
4000
–
–
BCP 48
hFE
2000
–
–
BCP 28
hFE
10000
–
–
BCP 48
hFE
4000
–
–
BCP 28
hFE
20000
–
–
BCP 48
hFE
10000
–
–
BCP 28
hFE
4000
–
–
BCP 48
hFE
2000
–
–
fT
–
200 MHz
–
–
8 pF
–
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 50 mA, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE = ie = 0, f = 1 MHz
CCB0
Thermal resistance – Wärmewiderstand
junction to ambient air – Sperrschicht zu umgebender Luft
RthA
93 K/W 2)
junction to soldering point – Sperrschicht zu Lötpad
RthS
17 K/W
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
BCP 29, BCP 49
Pinning – Anschlußbelegung
4=2
1
2
3
) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
1
2
3