BCP 28, BCP 48 Darlington Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP Power dissipation – Verlustleistung ±0.2 6.5 ±0.1 3 1.65 2.3 2 ±0.2 3.5 ±0.3 7 0.7 1.5 W Plastic case Kunststoffgehäuse 4 1 PNP 3 3.25 Dimensions / Maße in mm 1 = B1 2, 4 = C 3 = E2 SOT-223 Weight approx. – Gewicht ca. 0.04 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) BCP 28 BCP 48 Collector-Emitter-voltage B open - VCE0 30 V 60 V Collector-Base-voltage E open - VCB0 40 V 80 V Emitter-Base-voltage C open - VEB0 10 V Power dissipation – Verlustleistung Ptot 1.5 W 1) Collector current – Kollektorstrom (DC) - IC 500 mA Peak Collector current – Kollektor-Spitzenstrom - ICM 800 mA Base current – Basisstrom (DC) - IB 100 mA Peak Base current – Basisstrom - IBM 200 mA Junction temperature – Sperrschichttemperatur Tj 150/C Storage temperature – Lagerungstemperatur TS - 65…+ 150/C Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. Collector-Base cutoff current – Kollektorreststrom IE = 0, - VCB = 30 V BCP 28 - ICB0 – – 100 nA IE = 0, - VCB = 60 V BCP 48 - ICB0 – – 100 nA IE = 0, - VCB = 30 V, TA = 150/C BCP 28 - ICB0 – – 10 :A IE = 0, - VCB = 60 V, TA = 150/C BCP 48 - ICB0 – – 10 :A - IEB0 – – 100 nA Emitter-Base cutoff current – Emitterreststrom IC = 0, - VEB = 4 V 1 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 2 01.11.2003 Darlington Transistors BCP 28, BCP 48 Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. – – 1V – – 1.5 V Collector saturation volt. – Kollektor-Sättigungsspg. 1) - IC = 100 mA, - IB = 0.1 mA - VCEsat Base saturation voltage – Basis-Sättigungsspannung 1) - IC = 100 mA, - IB = 0.1 mA - VBEsat DC current gain – Kollektor-Basis-Stromverhältnis 1) - VCE = 1 V, - IC = 0.1 mA - VCE = 5 V, - IC = 10 mA - VCE = 5 V, - IC = 100 mA - VCE = 5 V, - IC = 500 mA BCP 28 hFE 4000 – – BCP 48 hFE 2000 – – BCP 28 hFE 10000 – – BCP 48 hFE 4000 – – BCP 28 hFE 20000 – – BCP 48 hFE 10000 – – BCP 28 hFE 4000 – – BCP 48 hFE 2000 – – fT – 200 MHz – – 8 pF – Gain-Bandwidth Product – Transitfrequenz - VCE = 5 V, - IC = 50 mA, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 10 V, IE = ie = 0, f = 1 MHz CCB0 Thermal resistance – Wärmewiderstand junction to ambient air – Sperrschicht zu umgebender Luft RthA 93 K/W 2) junction to soldering point – Sperrschicht zu Lötpad RthS 17 K/W Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren BCP 29, BCP 49 Pinning – Anschlußbelegung 4=2 1 2 3 ) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 01.11.2003 1 2 3