BSR 13, BSR 14 Switching Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN NPN Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 0.4 1.3 ±0.1 2.5 max 3 Type Code 2 1 250 mW 1.9 Dimensions / Maße in mm 1=B 2=E 3=C SOT-23 (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) BSR 13 BSR 14 Collector-Emitter-voltage B open VCE0 30 V 40 V Collector-Base-voltage E open VCB0 60 V 75 V Emitter-Base-voltage C open VEB0 5V 6V Power dissipation – Verlustleistung Ptot 250 mW 1) Collector current – Kollektorstrom (dc) IC 800 mA Peak Collector current – Kollektor-Spitzenstrom ICM 800 mA Peak Base current – Basis-Spitzenstrom IBM 200 mA Junction temp. – Sperrschichttemperatur Tj 150/C Storage temperature – Lagerungstemperatur TS - 65…+ 150/C Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. ICB0 – – 30 nA ICB0 – – 10 :A ICB0 – – 10 nA ICB0 – – 10 :A BSR 13 IEB0 – – 30 nA BSR 14 IEB0 – – 10 nA Collector-Base cutoff current – Kollektorreststrom IE = 0, VCB = 50 V IE = 0, VCB = 50 V, Tj = 150/C IE = 0, VCB = 60 V IE = 0, VCB = 60 V, Tj = 150/C BSR 13 BSR 14 Emitter-Base cutoff current – Emitterreststrom IC = 0, VEB = 5 V 1 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 6 01.11.2003 Switching Transistors BSR 13, BSR 14 Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. hFE 35 – – hFE 50 – – hFE 75 – – hFE 100 – 300 hFE 50 – – BSR 13 hFE 30 – – BSR 14 hFE 40 – – DC current gain – Kollektor-Basis-Stromverhältnis 1) VCE = 10 V, IC = 0.1 mA VCE = 10 V, IC = 1 mA VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 150 mA BSR 13 BSR 14 VCE = 1 V, IC = 150 mA VCE = 10 V, IC = 500 mA 1 Collector saturation volt. – Kollektor-Sättigungsspg. ) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA BSR 13 VCEsat – – 400 mV BSR 14 VCEsat – – 300 mV BSR 13 VCEsat – – 1.6 V BSR 14 VCEsat – – 1V Base saturation voltage – Basis-Sättigungsspannung 1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA BSR 13 VBEsat – – 1.3 V BSR 14 VBEsat 0.6 V – 1.2 V BSR 13 VBEsat – – 2.6 V BSR 14 VBEsat – – 2V Gain-Bandwidth Product – Transitfrequenz BSR 13 fT 250 MHz – – BSR 14 fT 300 MHz – – CCB0 – 8 pF – turn-on time ton – – 35 ns delay time td – – 15 ns tr – – 20 ns toff – – 250 ns ts – – 200 ns tf – – 60 ns VCE = 20 V, IC = 20 mA, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 10 V, IE = ie = 0, f = 1 MHz Switching times – Schaltzeiten rise time turn-off time storage time ICon = 150 mA IBon = 15 mA - IBoff = 15 mA fall time Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren Marking - Stempelung 420 K/W 2) BSR 15, BSR 16 BSR 13 = U7 BSR 14 = U8 ) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 01.11.2003 1 2 7