DG648BH45 DG648BH45 Gate Turn-off Thyristor DS4093-4 July 2014 (LN31736) APPLICATIONS KEY PARAMETERS 2000A ITCM VDRM 4500V 745A IT(AV) dVD/dt 1000V/µs 300A/µs diT/dt ■ Variable speed A.C. motor drive inverters (VSD-AC) ■ Uninterruptable Power Supplies ■ High Voltage Converters ■ Choppers ■ Welding ■ Induction Heating ■ DC/DC Converters FEATURES ■ Double Side Cooling ■ High Reliability In Service ■ High Voltage Capability ■ Fault Protection Without Fuses ■ High Surge Current Capability ■ Turn-off Capability Allows Reduction In Equipment Size And Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements Outline type code: H. See Package Details for further information. VOLTAGE RATINGS Type Number DG648BH45 Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage VRRM VDRM V V 4500 16 Conditions Tvj = 125oC, IDM = 50mA, IRRM = 50mA CURRENT RATINGS Symbol Parameter Conditions Max. Units 2000 A ITCM Repetitive peak controllable on-state current VD = VDRM, Tj = 125oC, diGQ/dt = 40A/µs, Cs = 2.0µF IT(AV) Mean on-state current THS = 80oC. Double side cooled. Half sine 50Hz. 745 A IT(RMS) RMS on-state current THS = 80oC. Double side cooled. Half sine 50Hz. 1170 A 1/19 DG648BH45 SURGE RATINGS Symbol Parameter Conditions Max. Units ITSM Surge (non-repetitive) on-state current 10ms half sine. Tj = 125oC 16.0 kA I2t I2t for fusing 10ms half sine. Tj =125oC 1.28 x 106 A2s Critical rate of rise of on-state current VD = 4500V, IT = 2000A, Tj = 125oC, IFG > 30A, Rise time > 1.0µs 300 A/µs To 66% VDRM; RGK ≤ 1.5Ω, Tj = 125oC 175 V/µs To 66% VDRM; VRG = -2V, Tj = 125oC 1000 V/µs IT = 2000A, VDM = 4500V,- Tj = 125°C, diGQ/dt = 40A/µs, Cs = 2.0µF 200 nH diT/dt dVD/dt LS Rate of rise of off-state voltage Peak stray inductance in snubber circuit GATE RATINGS Symbol Parameter VRGM Peak reverse gate voltage IFGM Peak forward gate current Conditions This value maybe exceeded during turn-off Min. Max. Units - 16 V 20 100 A PFG(AV) Average forward gate power - 15 W PRGM Peak reverse gate power - 19 kW diGQ/dt Rate of rise of reverse gate current 30 60 A/µs tON(min) Minimum permissable on time 50 - µs tOFF(min) Minimum permissable off time 100 - µs Min. Max. Units Double side cooled - 0.018 o Anode side cooled - 0.03 o Cathode side cooled - 0.045 o - 0.006 o - 125 o Operating junction/storage temperature range -40 125 o Clamping force 18.0 22.0 THERMAL RATINGS AND MECHANICAL DATA Symbol Rth(j-hs) Parameter DC thermal resistance - junction to heatsink surface Rth(c-hs) Contact thermal resistance Tvj Virtual junction temperature TOP/Tstg 2/19 Conditions Clamping force 20.0kN With mounting compound per contact C/W C/W C/W C/W C C kN DG648BH45 CHARACTERISTICS Tj = 125oC unless stated otherwise Symbol Conditions Parameter Min. Max. Units VTM On-state voltage At 2000A peak, IG(ON) = 7A d.c. - 3.2 V IDM Peak off-state current VDRM = 4500V, VRG = 0V - 100 mA IRRM Peak reverse current At VRRM - 50 mA VGT Gate trigger voltage VD = 24V, IT = 100A, Tj = 25oC - 1.0 V IGT Gate trigger current VD = 24V, IT = 100A, Tj = 25oC - 3.0 A IRGM Reverse gate cathode current VRGM = 16V, No gate/cathode resistor - 50 mA EON Turn-on energy VD = 3000V - 3170 mJ td Delay time IT = 2000A, dIT/dt = 300A/µs - 1.35 µs tr Rise time IFG = 30A, rise time < 1.0µs - 3.2 µs Turn-off energy - 10000 mJ tgs Storage time - 20.0 µs tgf Fall time IT = 2000A, VDM = VDRM - 2.0 µs tgq Gate controlled turn-off time Snubber Cap Cs = 2.0µF, - 22.0 µs QGQ Turn-off gate charge diGQ/dt = 40A/µs - 6000 µC QGQT Total turn-off gate charge - 12000 µC IGQM Peak reverse gate current - 690 A EOFF 3/19 DG648BH45 2.0 8.0 1.5 6.0 1.0 4.0 VGT 0.5 2.0 Gate trigger current IGT - (A) Gate trigger voltage VGT - (V) CURVES IGT 0 -50 -25 0 25 50 75 100 Junction temperature Tj - (°C) 0 150 125 Fig.1 Maximum gate trigger voltage/current vs junction temperature Instantaneous on-state current ITM - (A) 4000 Measured under pulse conditions. IG(ON) = 7A Half sine wave 10ms Tj = 125°C 3000 Tj = 25°C 2000 1000 0 0 1.0 2.0 3.0 4.0 Instantaneous on-state voltage VTM - (V) Fig.2 On-state characteristics 4/19 5.0 DG648BH45 Maximum permissible turn-off current ITCM - (A) 3000 Conditions: Tj = 125°C, VDM = VDRM, dIGQ/dt = 40A/µs 2000 1000 0 0 1.0 2.0 3.0 Snubber capacitance CS - (µF) 4.0 Fig.3 Maximum dependence of ITCM on CS 0.020 Thermal impedance - °C/W dc 0.015 0.010 0.005 0 0.001 0.01 0.1 Time - (s) 1.0 10 Peak half sine wave on-state current - (kA) Fig.4 Maximum (limit) transient thermal impedance - double side cooled 40 30 20 10 0 0.0001 0.001 0.01 Pulse duration - (s) 0.1 Fig.5 Surge (non-repetitive) on-state current vs time 1.0 5/19 DG648BH45 Mean on-state power dissipation - (W) 4000 Conditions: IG(ON) = 7A dc 3000 180° 120° 2000 60° 30° 1000 0 0 500 1000 1500 Mean on-state current IT(AV) - (A) 70 80 90 100 120 Maximum permissible case temperature - (°C) 130 Mean on-state power dissipation - (W) Fig.6 Steady state rectangluar wave conduction loss - double side cooled 3000 Conditions: IG(ON) = 7A 2000 60° 180° 120° 90° 30° 1000 0 0 90 100 120 130 200 400 600 800 1000 1200 1400 80 Mean on-state current IT(AV) - (A) Maximum permissible case temperature - (°C) Fig.7 Steady state sinusoidal wave conduction loss - double side cooled 6/19 DG648BH45 Conditions: Tj = 25°C, IFGM = 30A, CS = 2.0µF, dI/dt = 300A/µs, 3000 dIFG/dt = 30A/µs VD = 3000V VD = 2000V 2000 1000 VD = 1000V 0 0 500 1000 1500 2000 On-state current IT - (A) 2500 3000 Fig.8 Turn-on energy vs on-state current 5000 Conditions: Tj = 25°C, IT = 2000A, CS = 2.0µF, RS = 10 Ohms dI/dt = 300A/µs, dIFG/dt = 30A/µs 4000 Turn-on energy loss EON - (mJ) Turn-on energy loss EON - (mJ) 4000 3000 VD = 3000V 2000 VD = 2000V 1000 VD = 1000V 0 0 20 40 60 Peak forward gate current IFGM - (A) 80 Fig.9 Turn-on energy vs peak forward gate current 7/19 DG648BH45 Turn-on energy loss EON - (mJ) 4000 Conditions: Tj = 125°C, IFGM = 30A, CS = 2.0µF, RS = 10Ω, 3000 dIT/dt = 300A/µs, dIFG/dt = 30A/µs, VD = 3000V VD = 2000V 2000 1000 0 VD = 1000V 0 500 1000 1500 2000 On-state current IT - (A) 2500 3000 Fig.10 Turn-on energy vs on-state current 4000 Conditions: Tj = 125°C, IT = 2000A, CS = 2.0µF, RS = 10 Ohms dI/dt = 300A/µs, dIFG/dt = 30A/µs 3000 VD = 3000V 4000 Turn-on energy loss EON - (mJ) Turn-on energy loss EON - (mJ) 5000 VD = 2000V 2000 1000 Conditions: IT = 2000A, Tj = 125°C, CS = 2.0µF 3000 RS = 10 Ohms IFGM = 30A, dIFG/dt = 30A/µs VD = 3000V VD = 2000V 2000 1000 VD = 1000V VD = 1000V 0 0 0 20 40 60 Peak forward gate current IFGM - (A) Fig.11 Turn-on energy vs peak forward gate current 8/19 80 0 100 200 300 Rate of rise of on-state current dIT/dt - (A/µs) Fig.12 Turn-on energy vs rate of rise of on-state current DG648BH45 tr 3.0 2.0 td 1.0 0 Conditions: Tj = 125°C, IFGM = 30A, CS = 2.0µF, VD = 3000V, RS = 10Ω, dIT/dt = 300A/µs, dIFG/dt = 30A/µs, 0 500 1000 1500 2000 On-state current IT - (A) 2500 3000 Fig.13 Delay time & rise time vs turn-on current 8.0 Turn-on delay time and rise time - (µs) Turn-on delay and rise time - (µs) 4.0 Conditions: Tj = 125°C, IT = 2000A, CS = 2.0µF, RS = 10 Ohms, dI/dt = 300A/µs, dIFG/dt = 30A/µs, VD = 3000V 6.0 4.0 2.0 tr td 0 0 20 40 60 Peak forward gate current IFGM - (A) 80 Fig.14 Delay time & rise time vs peak forward gate current 9/19 DG648BH45 5000 4000 Turn-off energy loss EOFF - (mJ) VDRM Conditions: Tj = 25°C, CS = 2.0µF, dIGQ/dt = 40A/µs 0.75x VDRM 3000 0.5x VDRM 2000 1000 0 0 500 1000 1500 2000 On-state current IT - (A) 2500 3000 Fig.15 Turn-off energy vs on-state current Turn-off energy per pulse EOFF - (mJ) 6000 5000 Conditions: Tj = 25°C, CS = 2.0µF, IT = 2000A VDRM 0.75x VDRM 4000 3000 2000 20 0.5x VDRM 30 40 50 60 Rate of rise of reverse gate current dIGQ/dt - (A/µs) Fig.16 Turn-off energy vs rate of rise of reverse gate current 10/19 70 DG648BH45 10000 Conditions: Tj = 125°C, CS = 2.0µF, dIGQ/dt = 40A/µs 6000 0.75x VDRM 0.5x VDRM 4000 2000 0 0 500 1000 1500 2000 2500 On-state current IT - (A) FIG 17Fig.17 TURNTurn-off OFF ENERGY ON STATE CURRENT energy vs on-state current 12000 Turn-off energy per pulse EOFF - (mJ) Turn-off energy loss EOFF - (mJ) 8000 VDRM 10000 Conditions: Tj = 125°C, CS = 2.0µF, IT = 2000A 3000 VDRM 0.75x VDRM 8000 6000 4000 20 0.5x VDRM 30 40 50 60 Rate of rise of reverse gate current dIGQ/dt - (A/µs) 70 Fig.18 Turn-off energy loss vs rate of rise of reverse gate current 11/19 DG648BH45 Turn-off energy per pulse EOFF - (mJ) 8000 Conditions: Tj = 125°C, VDM = 0.75x VDRM, dIGQ/dt = 40A/µs 6000 CS = 2.0µF CS = 4.0µF 4000 2000 0 0 500 1000 1500 2000 On-state current IT - (A) 2500 3000 Fig.19 Turn-off energy vs on-state current Gate storage time tgs - (µs) 20.0 Conditions: CS = 2.0µF, dIGQ/dt = 40A/µs Tj = 125°C Tj = 25°C 15.0 10.0 5.0 0 0 500 1000 1500 2000 On-state current IT - (A) Fig.20 Gate storage time vs on-state current 12/19 2500 3000 DG648BH45 30 Conditions: CS = 2.0µF, IT = 2000A Gate storage time tgs - (µs) 25 20 Tj = 125°C 15 10 20 Tj = 25°C 30 40 50 60 Rate of rise of reverse gate current dIGQ/dt - (A/µs) 70 Fig.21 Gate storage time vs rate of rise of reverse gate current 2.0 Tj = 125°C Conditions: CS = 2.0µF, dIGQ/dt = 40A/µs Gate fall time tgf - (µs) 1.5 Tj = 25°C 1.0 0.5 0 0 500 1000 1500 2000 On-state current IT - (A) 2500 3000 Fig.22 Gate fall time vs on-state current 13/19 DG648BH45 2.5 Conditions: CS = 2.0µF, IT = 2000A Tj = 125°C Gate fall time tgf - (µs) 2.0 1.5 Tj = 25°C 1.0 0.5 20 30 40 50 60 Rate of rise of reverse gate current dIGQ/dt - (A/µs) 70 Fig.23 Gate fall time vs rate of rise of reverse gate current Peak reverse gate current IGQM - (A) 800 Conditions: CS = 2.0µF, dIGQ/dt = 40A/µs Tj = 125°C 600 Tj = 25°C 400 200 0 0 500 1000 1500 2000 Turn-off current IT - (A) 2500 Fig.24 Peak reverse gate current vs turn-off current 14/19 3000 DG648BH45 750 Conditions: CS = 2.0µF, IT = 2000A Tj = 125°C Peak reverse gate current IGQM - (A) 700 650 Tj = 25°C 600 550 500 20 30 40 50 60 Rate of rise of reverse gate current dIGQ/dt - (A/µs) 70 Fig.25 Peak reverse gate current vs rate of rise of reversegate current Total turn-off charge QGQ - (µC) 8000 Conditions: CS = 2.0µF, dIGQ/dt = 40A/µs Tj = 125°C 6000 Tj = 25°C 4000 2000 0 0 500 1000 1500 2000 On-state current IT - (A) 2500 3000 Fig.26 Turn-off gate charge vs on-state current 15/19 DG648BH45 Turn-off gate charge QGQ - (µC) 7000 Conditions: CS = 2.0µF, IT = 2000A 6000 TJ = 125°C 5000 Tj = 25°C 4000 3000 20 30 40 50 60 Rate of rise of reverse gate current dIGQ/dt - (A/µs) 70 Rate of rise of off-state voltage dV/dt - (V/µs) Fig.27 Turn-off gate charge vs rate of rise of reverse gate current 1000 Tj = 125°C 500 VD = 2250V VD = 3000V 0 0.1 1.0 10 100 Gate cathode resistance RGK - (Ohms) 1000 Fig.28 Rate of rise of off-state voltage vs gate cathode resistance 16/19 Anode voltage and current DG648BH45 0.9VD 0.9IT dVD/dt VD VD VDM IT td tgs tr tgf tgt Gate voltage and current dIFG/dt 0.1IFG ITAIL VDP 0.1VD tgq IFG VFG IG(ON) 0.1IGQ tw1 VRG QGQ 0.5IGQM IGQM V(RG)BR Recommended gate conditions: ITCM = 2000A IFG = 30A IG(ON) = 7A d.c. tw1(min) = 20µs IGQM = 690A diGQ/dt = 40A/µs QGQ = 6000µC VRG(min) = 2V VRG(max) = 16V These are recommended Dynex Semiconductor conditions. Other conditions are permitted according to users gate drive specifications. Fig.29 General switching waveforms 17/19 DG648BH45 PACKAGE DETAILS For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes Ø3.60 ± 0.05 x 2.0 ± 0.1 deep (One in each electrode) Cathode Aux. Tube Gate Tube 15° 52 Anode 26 ± 0.5 Ø100 Ø62.85 9.6 Ø62.85 Cathode 55 Nominal weight: 820g Clamping force: 20kN ±10% Lead coaxial length: 600mm Package outine type code: H ASSOCIATED PUBLICATIONS Title Application Note Number Calculating the junction temperature or power semiconductors GTO gate drive units AN4506 AN4571 Recommendations for clamping power semiconductors AN4839 Use of V , r on-state characteristic AN5001 Impoved gate drive for GTO series connections AN5177 TO 18/19 T