DG648BH - Dynex Semiconductor Ltd.

DG648BH45
DG648BH45
Gate Turn-off Thyristor
DS4093-4 July 2014 (LN31736)
APPLICATIONS
KEY PARAMETERS
2000A
ITCM
VDRM
4500V
745A
IT(AV)
dVD/dt
1000V/µs
300A/µs
diT/dt
■ Variable speed A.C. motor drive inverters (VSD-AC)
■ Uninterruptable Power Supplies
■ High Voltage Converters
■ Choppers
■ Welding
■ Induction Heating
■ DC/DC Converters
FEATURES
■ Double Side Cooling
■ High Reliability In Service
■ High Voltage Capability
■ Fault Protection Without Fuses
■ High Surge Current Capability
■ Turn-off Capability Allows Reduction In Equipment
Size And Weight. Low Noise Emission Reduces Acoustic
Cladding Necessary For Environmental Requirements
Outline type code: H.
See Package Details for further information.
VOLTAGE RATINGS
Type Number
DG648BH45
Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage
VRRM
VDRM
V
V
4500
16
Conditions
Tvj = 125oC, IDM = 50mA,
IRRM = 50mA
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
Units
2000
A
ITCM
Repetitive peak controllable on-state current VD = VDRM, Tj = 125oC, diGQ/dt = 40A/µs, Cs = 2.0µF
IT(AV)
Mean on-state current
THS = 80oC. Double side cooled. Half sine 50Hz.
745
A
IT(RMS)
RMS on-state current
THS = 80oC. Double side cooled. Half sine 50Hz.
1170
A
1/19
DG648BH45
SURGE RATINGS
Symbol
Parameter
Conditions
Max.
Units
ITSM
Surge (non-repetitive) on-state current
10ms half sine. Tj = 125oC
16.0
kA
I2t
I2t for fusing
10ms half sine. Tj =125oC
1.28 x 106
A2s
Critical rate of rise of on-state current
VD = 4500V, IT = 2000A, Tj = 125oC, IFG > 30A,
Rise time > 1.0µs
300
A/µs
To 66% VDRM; RGK ≤ 1.5Ω, Tj = 125oC
175
V/µs
To 66% VDRM; VRG = -2V, Tj = 125oC
1000
V/µs
IT = 2000A, VDM = 4500V,- Tj = 125°C,
diGQ/dt = 40A/µs, Cs = 2.0µF
200
nH
diT/dt
dVD/dt
LS
Rate of rise of off-state voltage
Peak stray inductance in snubber circuit
GATE RATINGS
Symbol
Parameter
VRGM
Peak reverse gate voltage
IFGM
Peak forward gate current
Conditions
This value maybe exceeded during turn-off
Min.
Max.
Units
-
16
V
20
100
A
PFG(AV)
Average forward gate power
-
15
W
PRGM
Peak reverse gate power
-
19
kW
diGQ/dt
Rate of rise of reverse gate current
30
60
A/µs
tON(min)
Minimum permissable on time
50
-
µs
tOFF(min)
Minimum permissable off time
100
-
µs
Min.
Max.
Units
Double side cooled
-
0.018
o
Anode side cooled
-
0.03
o
Cathode side cooled
-
0.045
o
-
0.006
o
-
125
o
Operating junction/storage temperature range
-40
125
o
Clamping force
18.0
22.0
THERMAL RATINGS AND MECHANICAL DATA
Symbol
Rth(j-hs)
Parameter
DC thermal resistance - junction to heatsink
surface
Rth(c-hs)
Contact thermal resistance
Tvj
Virtual junction temperature
TOP/Tstg
2/19
Conditions
Clamping force 20.0kN
With mounting compound
per contact
C/W
C/W
C/W
C/W
C
C
kN
DG648BH45
CHARACTERISTICS
Tj = 125oC unless stated otherwise
Symbol
Conditions
Parameter
Min.
Max.
Units
VTM
On-state voltage
At 2000A peak, IG(ON) = 7A d.c.
-
3.2
V
IDM
Peak off-state current
VDRM = 4500V, VRG = 0V
-
100
mA
IRRM
Peak reverse current
At VRRM
-
50
mA
VGT
Gate trigger voltage
VD = 24V, IT = 100A, Tj = 25oC
-
1.0
V
IGT
Gate trigger current
VD = 24V, IT = 100A, Tj = 25oC
-
3.0
A
IRGM
Reverse gate cathode current
VRGM = 16V, No gate/cathode resistor
-
50
mA
EON
Turn-on energy
VD = 3000V
-
3170
mJ
td
Delay time
IT = 2000A, dIT/dt = 300A/µs
-
1.35
µs
tr
Rise time
IFG = 30A, rise time < 1.0µs
-
3.2
µs
Turn-off energy
-
10000
mJ
tgs
Storage time
-
20.0
µs
tgf
Fall time
IT = 2000A, VDM = VDRM
-
2.0
µs
tgq
Gate controlled turn-off time
Snubber Cap Cs = 2.0µF,
-
22.0
µs
QGQ
Turn-off gate charge
diGQ/dt = 40A/µs
-
6000
µC
QGQT
Total turn-off gate charge
-
12000
µC
IGQM
Peak reverse gate current
-
690
A
EOFF
3/19
DG648BH45
2.0
8.0
1.5
6.0
1.0
4.0
VGT
0.5
2.0
Gate trigger current IGT - (A)
Gate trigger voltage VGT - (V)
CURVES
IGT
0
-50
-25
0
25
50
75 100
Junction temperature Tj - (°C)
0
150
125
Fig.1 Maximum gate trigger voltage/current vs junction temperature
Instantaneous on-state current ITM - (A)
4000
Measured under pulse conditions.
IG(ON) = 7A
Half sine wave 10ms
Tj = 125°C
3000
Tj = 25°C
2000
1000
0
0
1.0
2.0
3.0
4.0
Instantaneous on-state voltage VTM - (V)
Fig.2 On-state characteristics
4/19
5.0
DG648BH45
Maximum permissible turn-off
current ITCM - (A)
3000
Conditions:
Tj = 125°C, VDM = VDRM,
dIGQ/dt = 40A/µs
2000
1000
0
0
1.0
2.0
3.0
Snubber capacitance CS - (µF)
4.0
Fig.3 Maximum dependence of ITCM on CS
0.020
Thermal impedance - °C/W
dc
0.015
0.010
0.005
0
0.001
0.01
0.1
Time - (s)
1.0
10
Peak half sine wave on-state current - (kA)
Fig.4 Maximum (limit) transient thermal impedance - double side cooled
40
30
20
10
0
0.0001
0.001
0.01
Pulse duration - (s)
0.1
Fig.5 Surge (non-repetitive) on-state current vs time
1.0
5/19
DG648BH45
Mean on-state power dissipation - (W)
4000
Conditions:
IG(ON) = 7A
dc
3000
180°
120°
2000
60°
30°
1000
0
0
500
1000
1500
Mean on-state current IT(AV) - (A)
70
80
90 100 120
Maximum permissible case
temperature - (°C)
130
Mean on-state power dissipation - (W)
Fig.6 Steady state rectangluar wave conduction loss - double side cooled
3000
Conditions:
IG(ON) = 7A
2000
60°
180°
120°
90°
30°
1000
0
0
90 100 120 130
200 400 600 800 1000 1200 1400 80
Mean on-state current IT(AV) - (A)
Maximum permissible case
temperature - (°C)
Fig.7 Steady state sinusoidal wave conduction loss - double side cooled
6/19
DG648BH45
Conditions:
Tj = 25°C, IFGM = 30A,
CS = 2.0µF,
dI/dt = 300A/µs,
3000 dIFG/dt = 30A/µs
VD = 3000V
VD = 2000V
2000
1000
VD = 1000V
0
0
500
1000
1500
2000
On-state current IT - (A)
2500
3000
Fig.8 Turn-on energy vs on-state current
5000
Conditions:
Tj = 25°C, IT = 2000A,
CS = 2.0µF, RS = 10 Ohms
dI/dt = 300A/µs,
dIFG/dt = 30A/µs
4000
Turn-on energy loss EON - (mJ)
Turn-on energy loss EON - (mJ)
4000
3000
VD = 3000V
2000
VD = 2000V
1000
VD = 1000V
0
0
20
40
60
Peak forward gate current IFGM - (A)
80
Fig.9 Turn-on energy vs peak forward gate current
7/19
DG648BH45
Turn-on energy loss EON - (mJ)
4000
Conditions:
Tj = 125°C, IFGM = 30A,
CS = 2.0µF,
RS = 10Ω,
3000 dIT/dt = 300A/µs,
dIFG/dt = 30A/µs,
VD = 3000V
VD = 2000V
2000
1000
0
VD = 1000V
0
500
1000
1500
2000
On-state current IT - (A)
2500
3000
Fig.10 Turn-on energy vs on-state current
4000
Conditions:
Tj = 125°C, IT = 2000A,
CS = 2.0µF, RS = 10 Ohms
dI/dt = 300A/µs,
dIFG/dt = 30A/µs
3000
VD = 3000V
4000
Turn-on energy loss EON - (mJ)
Turn-on energy loss EON - (mJ)
5000
VD = 2000V
2000
1000
Conditions:
IT = 2000A,
Tj = 125°C,
CS = 2.0µF
3000 RS = 10 Ohms
IFGM = 30A,
dIFG/dt = 30A/µs
VD = 3000V
VD = 2000V
2000
1000
VD = 1000V
VD = 1000V
0
0
0
20
40
60
Peak forward gate current IFGM - (A)
Fig.11 Turn-on energy vs peak forward gate current
8/19
80
0
100
200
300
Rate of rise of on-state current dIT/dt - (A/µs)
Fig.12 Turn-on energy vs rate of rise of on-state current
DG648BH45
tr
3.0
2.0
td
1.0
0
Conditions: Tj = 125°C, IFGM = 30A,
CS = 2.0µF, VD = 3000V,
RS = 10Ω, dIT/dt = 300A/µs,
dIFG/dt = 30A/µs,
0
500
1000
1500
2000
On-state current IT - (A)
2500
3000
Fig.13 Delay time & rise time vs turn-on current
8.0
Turn-on delay time and rise time - (µs)
Turn-on delay and rise time - (µs)
4.0
Conditions:
Tj = 125°C, IT = 2000A,
CS = 2.0µF,
RS = 10 Ohms,
dI/dt = 300A/µs,
dIFG/dt = 30A/µs,
VD = 3000V
6.0
4.0
2.0
tr
td
0
0
20
40
60
Peak forward gate current IFGM - (A)
80
Fig.14 Delay time & rise time vs peak forward gate current
9/19
DG648BH45
5000
4000
Turn-off energy loss EOFF - (mJ)
VDRM
Conditions:
Tj = 25°C,
CS = 2.0µF,
dIGQ/dt = 40A/µs
0.75x VDRM
3000
0.5x VDRM
2000
1000
0
0
500
1000
1500
2000
On-state current IT - (A)
2500
3000
Fig.15 Turn-off energy vs on-state current
Turn-off energy per pulse EOFF - (mJ)
6000
5000
Conditions:
Tj = 25°C,
CS = 2.0µF,
IT = 2000A
VDRM
0.75x VDRM
4000
3000
2000
20
0.5x VDRM
30
40
50
60
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
Fig.16 Turn-off energy vs rate of rise of reverse gate current
10/19
70
DG648BH45
10000
Conditions:
Tj = 125°C,
CS = 2.0µF,
dIGQ/dt = 40A/µs
6000
0.75x VDRM
0.5x VDRM
4000
2000
0
0
500
1000
1500
2000
2500
On-state current IT - (A)
FIG 17Fig.17
TURNTurn-off
OFF ENERGY
ON STATE CURRENT
energy vs on-state current
12000
Turn-off energy per pulse EOFF - (mJ)
Turn-off energy loss EOFF - (mJ)
8000
VDRM
10000
Conditions:
Tj = 125°C,
CS = 2.0µF,
IT = 2000A
3000
VDRM
0.75x VDRM
8000
6000
4000
20
0.5x VDRM
30
40
50
60
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
70
Fig.18 Turn-off energy loss vs rate of rise of reverse gate current
11/19
DG648BH45
Turn-off energy per pulse EOFF - (mJ)
8000
Conditions:
Tj = 125°C,
VDM = 0.75x VDRM,
dIGQ/dt = 40A/µs
6000
CS = 2.0µF
CS = 4.0µF
4000
2000
0
0
500
1000
1500
2000
On-state current IT - (A)
2500
3000
Fig.19 Turn-off energy vs on-state current
Gate storage time tgs - (µs)
20.0
Conditions:
CS = 2.0µF,
dIGQ/dt = 40A/µs
Tj = 125°C
Tj = 25°C
15.0
10.0
5.0
0
0
500
1000
1500
2000
On-state current IT - (A)
Fig.20 Gate storage time vs on-state current
12/19
2500
3000
DG648BH45
30
Conditions:
CS = 2.0µF,
IT = 2000A
Gate storage time tgs - (µs)
25
20
Tj = 125°C
15
10
20
Tj = 25°C
30
40
50
60
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
70
Fig.21 Gate storage time vs rate of rise of reverse gate current
2.0
Tj = 125°C
Conditions:
CS = 2.0µF,
dIGQ/dt = 40A/µs
Gate fall time tgf - (µs)
1.5
Tj = 25°C
1.0
0.5
0
0
500
1000
1500
2000
On-state current IT - (A)
2500
3000
Fig.22 Gate fall time vs on-state current
13/19
DG648BH45
2.5
Conditions:
CS = 2.0µF,
IT = 2000A
Tj = 125°C
Gate fall time tgf - (µs)
2.0
1.5
Tj = 25°C
1.0
0.5
20
30
40
50
60
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
70
Fig.23 Gate fall time vs rate of rise of reverse gate current
Peak reverse gate current IGQM - (A)
800
Conditions:
CS = 2.0µF,
dIGQ/dt = 40A/µs
Tj = 125°C
600
Tj = 25°C
400
200
0
0
500
1000
1500
2000
Turn-off current IT - (A)
2500
Fig.24 Peak reverse gate current vs turn-off current
14/19
3000
DG648BH45
750
Conditions:
CS = 2.0µF,
IT = 2000A
Tj = 125°C
Peak reverse gate current IGQM - (A)
700
650
Tj = 25°C
600
550
500
20
30
40
50
60
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
70
Fig.25 Peak reverse gate current vs rate of rise of reversegate current
Total turn-off charge QGQ - (µC)
8000
Conditions:
CS = 2.0µF,
dIGQ/dt = 40A/µs
Tj = 125°C
6000
Tj = 25°C
4000
2000
0
0
500
1000
1500
2000
On-state current IT - (A)
2500
3000
Fig.26 Turn-off gate charge vs on-state current
15/19
DG648BH45
Turn-off gate charge QGQ - (µC)
7000
Conditions:
CS = 2.0µF,
IT = 2000A
6000
TJ = 125°C
5000
Tj = 25°C
4000
3000
20
30
40
50
60
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
70
Rate of rise of off-state voltage dV/dt
- (V/µs)
Fig.27 Turn-off gate charge vs rate of rise of reverse gate current
1000
Tj = 125°C
500
VD = 2250V
VD = 3000V
0
0.1
1.0
10
100
Gate cathode resistance RGK - (Ohms)
1000
Fig.28 Rate of rise of off-state voltage vs gate cathode resistance
16/19
Anode voltage and current
DG648BH45
0.9VD
0.9IT
dVD/dt
VD
VD VDM
IT
td
tgs
tr
tgf
tgt
Gate voltage and current
dIFG/dt
0.1IFG
ITAIL
VDP
0.1VD
tgq
IFG
VFG
IG(ON)
0.1IGQ
tw1
VRG
QGQ
0.5IGQM
IGQM
V(RG)BR
Recommended gate conditions:
ITCM = 2000A
IFG = 30A
IG(ON) = 7A d.c.
tw1(min) = 20µs
IGQM = 690A
diGQ/dt = 40A/µs
QGQ = 6000µC
VRG(min) = 2V
VRG(max) = 16V
These are recommended Dynex Semiconductor conditions. Other conditions are permitted
according to users gate drive specifications.
Fig.29 General switching waveforms
17/19
DG648BH45
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 holes Ø3.60 ± 0.05 x 2.0 ± 0.1 deep (One in each electrode)
Cathode Aux. Tube
Gate Tube
15°
52
Anode
26 ± 0.5
Ø100
Ø62.85
9.6
Ø62.85
Cathode
55
Nominal weight: 820g
Clamping force: 20kN ±10%
Lead coaxial length: 600mm
Package outine type code: H
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T