e PTB 20074 14 watts, 1.477–1.501 GHz Cellular Radio RF Power Transistor Description The 20074 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.477 to 1.501 GHz. Rated at 14 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 14 watts, 1.477–1.501 GHz Class AB Characteristics 30% Collector Efficiency at 10 watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power Output Power (Watts) 20 15 200 74 LOT COD E 10 VCC = 26 V ICQ = 50 mA f = 1.501 GHz 5 0 0 1 2 3 4 Package 20201 Input Power (Watts) Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 50 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 1.4 Adc Total Device Dissipation at Tflange = 25°C PD Above 25°C derate by 25 Watts 0.14 W/°C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RθJC 7.0 °C/W 1 9/28/98 e PTB 20074 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IB = 0 A, IC = 40 mA, RBE = 22 Ω V(BR)CER 50 — — Volts Breakdown Voltage C to E VBE = 0 V, IC = 40 mA V(BR)CES 50 — — Volts Breakdown Voltage E to B IC = 0 A, IE = 20 mA V(BR)EBO 4 5 — Volts DC Current Gain VCE = 10 V, IC = 0.25 A hFE 20 50 120 — Symbol Min Typ Max Units Gpe 7 8 — dB P-1dB 13 15 — Watts ηC 30 — — % IMD — -30 — dBc Ψ — — 5:1 — RF Specifications (100% Tested) Characteristic Gain (VCC = 26 Vdc, Pout = 10 W, ICQ = 50 mA, f = 1.501 GHz) Power Output at 1 dB Compression (VCC = 26 Vdc, ICQ = 50 mA, f = 1.501 GHz) Collector Efficiency (VCC = 26 Vdc, Pout = 10 W, ICQ = 50 mA, f = 1.501 GHz) Intermodulation Distortion (VCC = 26 Vdc, Pout = 10 W(PEP), ICQ = 50 mA, f1 = 1.500 GHz, f2 = 1.501 GHz) Load Mismatch Tolerance (VCC = 26 Vdc, Pout = 10 W, ICQ = 50 mA, f = 1.501 GHz—all phase angles at frequency of test) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 2 Specifications subject to change without notice. LF © Ericsson Components AB 1995 EUS/KR 1301-PTB 20074 Uen Rev. C 09-28-98