e PTB 20046 1 Watt, 1465–1513 MHz Cellular Radio RF Power Transistor Description The 20046 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1465 to 1501 MHz. Rated at 1 watt minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 1 Watt, 1465–1513 MHz Class AB Characteristics 18% Collector Efficiency at 1 Watt Gold Metallization Silicon Nitride Passivated 200 46 LOT COD E Package 20201 Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 50 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 0.7 Adc Total Device Dissipation at Tflange = 25°C PD 10 Watts 0.057 W/°C Above 25°C derate by Storage Temperature Tstg 150 °C Thermal Resistance (Tflange = 70°C) RθJC 17.5 °C/W 1 9/28/98 e PTB 20046 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IB = 0 A, IC = 10 mA, RBE = 22 Ω V(BR)CER 50 — — Volts Breakdown Voltage C to E VBE = 0 V, IC = 10 mA V(BR)CES 50 — — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 4 5 — Volts DC Current Gain VCE = 5 V, IC = 1 A hFE 20 50 120 — Symbol Min Typ Max Units Gpe 10.5 — — dB P-1dB 2.5 — — Watts ηC 18 — — % IMD — -23 — dBc Ψ — — 5:1 — RF Specifications (100% Tested) Characteristic Gain (VCC = 26 Vdc, Pout = 1 W, ICQ = 40 mA, f = 1501 MHz) Power Output at 1 dB Compression (VCC = 26 Vdc, ICQ = 40 mA, f = 1501 MHz) Collector Efficiency (VCC = 26 Vdc, Pout = 1 W, ICQ = 40 mA, f = 1501 MHz) Intermodulation Distortion (VCC = 26 Vdc, Pout = 1 W(PEP), ICQ = 40 mA, f1 = 1500 MHz, f2 = 1501 MHz) Load Mismatch Tolerance (VCC = 26 Vdc, Pout = 1 W, ICQ = 40 mA, f = 1501 MHz—all phase angles at frequency of test) Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 26 Vdc, Pout = 1 W, ICQ = 40 mA) Z Source Z Load Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 Frequency Z Source Z Load MHz R jX R jX 1477 10.42 -1.49 8.69 15.67 1489 10.20 -1.26 8.84 16.01 1501 9.87 -1.05 9.08 16.44 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 2 Specifications subject to change without notice. LF © Ericsson Components AB 1994 EUS/KR 1301-PTB 20046 Uen Rev. D 09-28-98