e PTB 20080 25 Watts, 1.6–1.7 GHz RF Power Transistor Description ThPTB 20080 is a class A/AB, NPN, silicon bipolar junction, internallymatched RF power transistor intended for 26 Vdc operation from 1.6 to 1.7 GHz. It is rated at 25 Watts minimum output power for PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. 25 Watts, 1.6–1.7 GHz Class AB Characteristics 40% Collector Efficiency at 25 Watts Gold Metallization Silicon Nitride Passivated 40 80 30 60 20 40 VCC = 26 V 10 20 ICQ = 125 mA f = 1.65 GHz 0 2008 0 EXX X Efficiency (%) Output Power (Watts) Typical Output Power & Efficiency vs. Input Power 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Package 20209 Input Power (Watts) Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 50 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 3.4 Adc Total Device Dissipation at Tflange = 25° C PD 123 Watts 0.7 W/°C Above 25° C derate by Storage Temperature Range TSTG 150 °C Thermal Resistance (Tflange = 70°C) RθJC 1.43 °C/W 1 9/28/98 e PTB 20080 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to B VBE = 0 V, IC = 15 mA V(BR)CES 50 — — Vdc Breakdown Voltage E to B IC = 5 mA V(BR)EBO 4.0 — — Vdc Cut-off Current C to E VCE = 26 V ICES — — 10 mA DC Current Gain VCE = 5 V, IC = 2 A hFE 30 — — — Symbol Min Typ Max Units Gpe 10.5 11.5 — dB P-1dB 25 — — Watts Collector Efficiency (VCC = 26 Vdc, POUT = 25 W, ICQ = 125 mA, f = 1.65 GHz) ηC 40 44 — % Load Mismatch Tolerance (VCC = 26 Vdc, POUT = 25 W, ICQ = 125 mA, f = 1.65 GHz—all phase angles at frequency of test) Ψ — — 10:1 — RF Specifications (100% Tested) Characteristic Power Gain (VCC = 26 Vdc, POUT = 10 W, ICQ = 125 mA, f = 1.65 GHz) Power Output at 1 dB Compression (VCC = 26 Vdc, ICQ = 125 mA, f = 1.65 GHz) Impedance Data (data shown for fixed-tuned broadband circuit) VCC = 26 Vdc, POUT = 25 W, ICQ = 125 mA Z Source Frequency Z Load Z Source GHz R jX R jX 1.60 5.6 -4.1 2.6 -1.0 1.65 5.6 -4.0 2.6 -0.6 1.70 5.6 -4.0 2.7 -0.2 2 5/6/98 Z0 = 50 Ω Z Load e PTB 20080 Typical Performance Gain vs. Frequency 13 (as measured in a broadband circuit) Gain (dB) 12 11 VCC = 26 V ICQ = 125 mA 10 PIN = 0.65 W 9 1.60 1.62 1.64 1.66 1.68 1.70 Frequency (GHz) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 3 Specifications subject to change without notice. LF © 1996 Ericsson Inc. EUS/KR 1301-PTB 20080 Uen Rev. C 09-28-98