ERICSSON PTB20080

e
PTB 20080
25 Watts, 1.6–1.7 GHz
RF Power Transistor
Description
ThPTB 20080 is a class A/AB, NPN, silicon bipolar junction, internallymatched RF power transistor intended for 26 Vdc operation from 1.6
to 1.7 GHz. It is rated at 25 Watts minimum output power for PEP
applications. Ion implantation, nitride surface passivation and gold
metallization ensure excellent device reliability. 100% lot traceability
is standard.
•
•
•
•
•
25 Watts, 1.6–1.7 GHz
Class AB Characteristics
40% Collector Efficiency at 25 Watts
Gold Metallization
Silicon Nitride Passivated
40
80
30
60
20
40
VCC = 26 V
10
20
ICQ = 125 mA
f = 1.65 GHz
0
2008
0
EXX
X
Efficiency (%)
Output Power (Watts)
Typical Output Power & Efficiency vs. Input Power
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Package 20209
Input Power (Watts)
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
VCER
50
Vdc
Collector-Base Voltage
VCBO
50
Vdc
Emitter-Base Voltage (collector open)
VEBO
4.0
Vdc
Collector Current (continuous)
IC
3.4
Adc
Total Device Dissipation at Tflange = 25° C
PD
123
Watts
0.7
W/°C
Above 25° C derate by
Storage Temperature Range
TSTG
150
°C
Thermal Resistance (Tflange = 70°C)
RθJC
1.43
°C/W
1
9/28/98
e
PTB 20080
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to B
VBE = 0 V, IC = 15 mA
V(BR)CES
50
—
—
Vdc
Breakdown Voltage E to B
IC = 5 mA
V(BR)EBO
4.0
—
—
Vdc
Cut-off Current C to E
VCE = 26 V
ICES
—
—
10
mA
DC Current Gain
VCE = 5 V, IC = 2 A
hFE
30
—
—
—
Symbol
Min
Typ
Max
Units
Gpe
10.5
11.5
—
dB
P-1dB
25
—
—
Watts
Collector Efficiency
(VCC = 26 Vdc, POUT = 25 W, ICQ = 125 mA, f = 1.65 GHz)
ηC
40
44
—
%
Load Mismatch Tolerance
(VCC = 26 Vdc, POUT = 25 W, ICQ = 125 mA,
f = 1.65 GHz—all phase angles at frequency of test)
Ψ
—
—
10:1
—
RF Specifications (100% Tested)
Characteristic
Power Gain
(VCC = 26 Vdc, POUT = 10 W, ICQ = 125 mA, f = 1.65 GHz)
Power Output at 1 dB Compression
(VCC = 26 Vdc, ICQ = 125 mA, f = 1.65 GHz)
Impedance Data (data shown for fixed-tuned broadband circuit)
VCC = 26 Vdc, POUT = 25 W, ICQ = 125 mA
Z Source
Frequency
Z Load
Z Source
GHz
R
jX
R
jX
1.60
5.6
-4.1
2.6
-1.0
1.65
5.6
-4.0
2.6
-0.6
1.70
5.6
-4.0
2.7
-0.2
2
5/6/98
Z0 = 50 Ω
Z Load
e
PTB 20080
Typical Performance
Gain vs. Frequency
13
(as measured in a broadband circuit)
Gain (dB)
12
11
VCC = 26 V
ICQ = 125 mA
10
PIN = 0.65 W
9
1.60
1.62
1.64
1.66
1.68
1.70
Frequency (GHz)
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: [email protected]
www.ericsson.com/rfpower
3
Specifications subject to change without notice.
LF
© 1996 Ericsson Inc.
EUS/KR 1301-PTB 20080 Uen Rev. C 09-28-98