e PTB 20216 6 Watts, 1.8–2.0 GHz RF Power Transistor Description The 20216 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation across the 1.80 to 2.00 GHz frequency band. Rated at 6 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 6 Watts, 1.80–2.00 GHz Class AB Characteristics 30% Collector Efficiency at 4 Watts Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel Typical Output Power vs. Input Power Output Power (Watts) 7 VCC = 26 V 6 ICQ = 50 mA f = 1.8 - 2.0 GHz 5 202 16 LO 4 TC OD E 3 2 0.0 0.2 0.4 0.6 0.8 Package 20227 Input Power (Watts) Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 50 Vdc Collector-Emitter Voltage VCES 50 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 1.0 Adc Total Device Dissipation at Tflange = 25°C PD 19.7 Watts 0.112 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RθJC 8.9 °C/W 1 9/28/98 e PTB 20216 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IC = 10 mA, IB = 0 A V(BR)CEO 20 — — Volts Breakdown Voltage C to E VBE = 0 V, IC = 10 mA V(BR)CES 50 — — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 4.0 5.0 — Volts DC Current Gain VCE = 5 V, IC = 50 mA hFE 20 40 — — Symbol Min Typ Max Units Gain (VCC = 26 Vdc, Pout = 4 W, ICQ = 50 mA, f = 2.0 GHz) Gpe 8.0 10 — dB Gain (VCC = 26 Vdc, Pout = 6 W, ICQ = 50 mA, f = 2.0 GHz) Gpe 7.0 9.0 — dB Collector Efficiency (VCC = 26 Vdc, Pout = 4 W, ICQ = 50 mA, f = 2.0 GHz) ηC 30 — — % Load Mismatch Tolerance (VCC = 26 Vdc, Pout = 4 W, ICQ = 50 mA, f = 2.0 GHz—all phase angles at frequency of test) Ψ — — 5:1 — RF Specifications (100% Tested) Characteristic Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 26 Vdc, Pout = 4 W, ICQ = 50 mA) Z Source Z Load Z0 = 50 Ω Frequency Z Source Z Load GHz R jX R jX 1.90 14.49 -7.50 11.49 -10.15 1.95 12.30 -6.16 7.23 -6.29 2.00 10.00 -3.55 4.41 -1.34 Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 2 5/19/98 Specifications subject to change without notice. LF © 1996 Ericsson Inc. EUS/KR 1301-PTB 20216 Uen Rev. C 09-28-98