PTF 10119 12 Watts, 2.1–2.2 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10119 is an internally matched, common source, N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 12 watts power output. Nitride surface passivation and gold metallization ensure excellent device reliability. • • • • • • • INTERNALLY MATCHED Performance at 2.17 GHz, 28 Volts - Output Power = 12 Watts Min - Power Gain = 11 dB Typ - Efficiency = 43% Typ @ P-1dB Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% lot traceability Typical Output Power vs. Input Power Output Power (Watts) 20 16 1011 9 12 A-12 8 3456 0053 VDD = 28 V IDQ = 160 mA f = 2170 MHz 4 0 0 0.2 0.4 0.6 0.8 1 1.2 Input Power (Watts) Package 20222 Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS ±20 Vdc Operating Junction Temperature TJ 200 °C Total Device Dissipation at Tflange = 25°C Above 25°C derate by PD 55 Watts 0.31 W/°C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RqJC 3.2 °C/W e 1 e PTF 10119 Electrical Characteristics Characteristic (100% Tested) Conditions Drain-Source Breakdown Voltage VGS = 0 V, ID = 50 mA Symbol Min Typ Max Units V(BR)DSS 65 — — Volts Zero Gate Voltage Drain Current VDS = 26 V, VGS = 0 V IDSS — — 1.0 mA Gate Threshold Voltage VDS = 10 V, ID = 75 mA VGS(th) 3.0 — 5.0 Volts Forward Transconductance VDS = 10 V, ID = 2 A gfs — 0.8 — Siemens Symbol Min Typ Max Units Gps 10 11 — dB p-1dB 12 14 — Watts hD 30 43 — % Y — — 10:1 — RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 3 W, IDQ = 160 mA, f = 2.11, 2.17 GHz) Power Output at 1 dB Compressed (VDD = 28 V, IDQ = 160 mA, f = 2.17 GHz) Drain Efficiency (VDD = 28 V, POUT = 12 W, IDQ = 160 mA, f = 2.17 GHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 12 W, IDQ = 160 mA, f = 2.17 GHz —all phase angles at frequency of test) 0 Impedance Data 0. 45 Z0 = 50 W VDS = 28 V, POUT = 12 W, IDQ = 160 mA D 0.3 Z Source Z Load 0.2 G 2.30 GHz 0.1 S R jX R jX 2.00 5.7 -12.11 3.30 1.21 2.10 16.4 -19.50 3.55 0.92 2.12 19.7 -18.82 4.12 0.88 2.15 22.8 -14.14 3.75 0.62 23.0 -13.15 3.53 0.34 2.20 26.6 -9.28 3.32 0.38 2.30 20.2 12.03 3.23 0.84 2.00 GHz 05 0.3 2 0.5 0.4 0.3 Z Source 0.2 2.17 0.2 0.1 L W AVE GHz 2.00 GHz 0.1 0.0 Z Load W < --- Z Source W Frequency Z Load 2.30 GHz e PTF 10119 Bias Voltage vs. Temperature Capacitance vs. Supply Voltage * 1.03 Cds and Cgs (pF) Bias Voltage (V) 1.01 1.00 0.99 0.98 0.97 0.075 0.2875 0.96 0.5 0.7125 0.95 0.925 1.1375 40 Cgs 35 2 1.5 25 Cds 20 20 40 1 15 10 0.5 Crss 0 0 0 0 2.5 30 5 0.94 -20 VGS = 0 V f = 1 MHz 45 60 80 Crss (pF) 1.02 3 50 Voltage nomalized to 1.0 V Series show current (A) 100 10 20 30 40 Supply Voltage (Volts) Temp. (°C) *This part is internally matched. Measurements of the finished product will not yield these figures. Ericsson Microelectronics RF Power Products Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: [email protected] www.ericsson.com/rfpower 3 Specifications subject to change without notice. L1 © 1998 Ericsson Inc. EUS/KR 1301-PTF 10119 Uen Rev. A 12-21-99 e Notes 4