PTF 10031 50 Watts, 1.0 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10031 is a 50 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.0 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • Performance at 960 MHz, 28 Volts - Output Power = 50 Watts - Power Gain = 13.0 dB Typ - Efficiency = 55% Typ • • • • • • Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability Back Side Common Source Available in Package 20235 as PTF 10015 100% Lot Traceability 70 90 60 80 Output Power (W) 50 A -1 2 70 Efficiency (%) 40 60 30 50 20 VDD = 28 V 40 10 IDQ = 350 mA f = 960 MHz 30 0 1 2 3 3456 9744 100 15 A-1 Package 20235 20 0 Package 20222 1003 1 Efficiency Output Power Typical Power Out & Efficiency vs. Power In 4 234 561 970 Input Power (Watts) Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS ±20 Vdc Operating Junction Temperature TJ 200 °C Total Device Dissipation TCASE = 25°C PD 175 Watts 1.0 W/°C Above 25°C derate by Storage Temperature Range TSTG -65 to 150 °C Thermal Resistance (TCASE = 70°C) RqJC 1.0 °C/W All published data at TCASE = 25°C unless otherwise indicated. e 1 e PTF 10031 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA V(BR)DSS 65 — — Volts Drain-Source Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 mA Gate Threshold Voltage VDS = 10 V, ID = 75 mA VGS(th) 3.0 — 5.0 Volts Forward Transconductance VDS = 10 V, ID = 3 A gfs — 2.8 — Siemens Symbol Min Typ Max Units Gps 12.0 13.0 — dB P-1dB 50 55 — Watts h 50 55 — % Y — — 10:1 — RF Specifications (100% Tested) Characteristic Common Source Power Gain (VDD = 28 V, POUT = 50 W, IDQ = 350 mA, f = 960 MHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 350 mA, f = 960 MHz) Drain Efficiency (VDD = 28 V, POUT = 50 W, IDQ = 350 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 50 W, IDQ = 350 mA, f = 960 MHz— all phase angles at frequency of test) Typical Performance Intermodulation Distortion vs. Power Output Gain vs. Power Output -15 16 VDD = 28 V 15 f1 = 950.000 MHz 14 IMD (dB) Gain (dB) 3rd Order IDQ = 350 mA -25 13 12 VDD = 28 V 11 IDQ = 350 mA f = 960 MHz 10 20 5th -45 7th 10 0 f2 = 950.100 MHz -35 30 40 50 60 -55 70 0 Power Output (Watts) 10 20 30 40 50 Output Power (Watts PEP) 2 60 70 e PTF 10031 Output Power vs. Supply Voltage Gain vs. Frequency 60 (circuit optimized at 960 M Hz) 55 14 Gain (dB) Output Power (Watts) 15 50 IDQ = 350 mA f = 960 MHz 45 13 VDD = 28 V IDQ = 350 m A 12 P O UT = 50 W 11 40 22 24 26 28 30 32 950 34 960 Drain-Source Voltage (Volts) 16 1.02 14 1.01 100 12 80 10 60 8 Cds 40 Bias Voltage (V) Cds & Cgs (pF) Cgs 120 18 1.03 Crss (pF) VGS = 0 V f = 1 MHz 140 6 Crss 20 4 0 10 20 30 990 1000 Voltage normalized to 1.0 V Series show current (A) 1.00 0.43 0.99 1.25 0.98 2.08 0.97 2.9 3.71 0.96 2 0 980 Bias Voltage vs. Temperature Capacitance vs. Supply Voltage 160 970 Fre que ncy (M Hz) 4.53 0.95 40 -20 Supply Voltage (Volts) 5 30 55 Temp. (°C) 80 105 Impedance Data (circuit optimized at 960 MHz) VDD = 28 V, POUT = 50 W, IDQ = 350 mA D Z Source Z Load G S Z0 = 50 W Z Source W Frequency Z Load W MHz R jX R jX 850 1.38 -1.22 2.50 1.00 900 1.20 -0.44 2.45 1.65 950 1.08 +0.67 2.40 2.33 1000 0.96 +1.30 2.40 2.90 3 e PTF 10031 Typical Scattering Parameters (VDS = 28 V, ID = 1.0 A) f (MHz) Mag S11 Ang Mag S21 Ang Mag S12 Ang Mag Ang 40 60 80 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 0.883 0.878 0.876 0.884 0.904 0.915 0.934 0.947 0.962 0.975 0.974 0.977 0.979 0.985 0.981 0.980 0.975 0.973 0.972 0.969 0.966 0.969 0.969 0.970 0.970 0.970 0.971 0.971 0.973 0.973 0.972 0.965 -153 -160 -163 -164 -165 -165 -164 -164 -163 -163 -163 -163 -164 -164 -165 -166 -167 -168 -170 -171 -173 -174 -176 -177 -178 -179 180 179 179 179 179 179 33.0 21.8 16.1 12.8 8.21 5.67 4.36 3.41 2.78 2.30 1.90 1.65 1.44 1.28 1.14 1.01 0.924 0.809 0.749 0.656 0.609 0.564 0.526 0.450 0.405 0.383 0.351 0.330 0.308 0.255 0.219 0.210 93 85 80 76 65 58 51 45 41 36 33 30 27 26 22 21 19 16 14 12 14 8 3 6 1 4 -5 -5 -5 -3 5 -8 0.014 0.013 0.012 0.012 0.011 0.010 0.010 0.010 0.008 0.008 0.006 0.006 0.005 0.004 0.003 0.004 0.003 0.001 0.003 0.003 0.002 0.003 0.004 0.004 0.005 0.005 0.005 0.005 0.005 0.006 0.006 0.006 3 1 -6 -13 -18 -23 -31 -31 -28 -33 -36 -52 -46 -53 -27 -18 -13 14 -1 30 53 59 56 69 57 65 56 61 52 59 58 62 0.527 0.533 0.553 0.574 0.638 0.694 0.769 0.792 0.837 0.873 0.874 0.912 0.916 0.925 0.933 0.933 0.936 0.946 0.939 0.946 0.948 0.945 0.949 0.955 0.953 0.952 0.959 0.957 0.963 0.965 0.965 0.957 -143 -148 -150 -148 -148 -149 -148 -149 -150 -151 -151 -152 -154 -154 -156 -157 -158 -160 -160 -162 -164 -164 -167 -167 -168 -169 -170 -170 -171 -171 -171 -172 4 S22 e PTF 10031 Test Circuit Z1 = 50W Z2 = 6.3W lo = .230 Z3 = 11.0W lo = .225 Test Circuit Schematic for f = 960 MHz DUT C1, C10 C2, C9 C3 C4 C5, C6 C7 C8 L1 R1, R2 R3 Circuit Board PTF 10031 36 pF, Capacitor ATC 100 B 0.3-3.5 pF, Variable Capacitor, Johanson 5.6 pF, Capacitor ATC 100 B 0.01 mF, Capacitor ATC 10,000 B 51 pF, Capacitor ATC 100 B 0.1 mF, 50 V, Capacitor Digi-Key P4917-ND 100 mF, 50 V, Electrolytic Capacitor, Digi-Key P5276 4 Turn, #20 AWG, .120” I.D. 560 W, 1/4 W Resistor 330 W, 1/4 W Resistor .028" Dielectric Thickness, er = 4.0, AlliedSignal, G200, 2 oz. copper Placement Diagram 5 Z4 = 50W e PTF 10031 Test Circuit Artwork (1 inch ) Ericsson Microelectronics RF Power Products Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: [email protected] www.ericsson.com/rfpower 6 Specifications subject to change without notice. LF © 1997 Ericsson Inc. EUS/KR 1301-PTF 10031 Uen Rev. B 12-14-98