PTF 10162 18 Watts, 860–960 MHz GOLDMOS™ Field Effect Transistor Description The PTF 10162 is an 18 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. It operates at 55% efficiency with 15 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • Performance at 960 MHz, 26 Volts - Output Power = 18 Watts - Power Gain = 15 dB Typ - Efficiency = 55% Typ • • • • • Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability Back Side Common Source 100% Lot Traceability Typical Output Power & Efficiency vs. Input Power 80 20 70 Output Power 16 60 Efficiency 12 50 8 VDD = 26 V 40 4 IDQ = 130 mA f = 960 MHz 30 0 Efficiency (%) Output Power (Watts) 24 1016 3456 2 985 A -1 2 5 20 0.0 0.3 0.5 0.8 1.0 Input Power (Watts) Package 20222 RF Specifications (100% Tested) Characteristic Common Source Power Gain (VDD = 26 V, POUT = 18 W, IDQ = 130 mA, f = 960 MHz) Power Output at 1 dB Compression (VDD = 26 V, IDQ = 130 mA, f = 960 MHz) Drain Efficiency (VDD = 26 V, POUT = 18 W, IDQ = 130 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 26 V, POUT = 18 W, IDQ = 130 mA, f = 960 MHz— all phase angles at frequency of test) Symbol Min Typ Max Units Gps 14 15 — dB P-1dB 18 20 — Watts h 50 55 — % Y — — 5:1 — All published data at TCASE = 25°C unless otherwise indicated. e 1 e PTF 10162 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA V(BR)DSS 65 — — Volts Drain-Source Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 mA Gate Threshold Voltage VDS = 10 V, ID = 75 mA VGS(th) 3.0 — 5.0 Volts Forward Transconductance VDS = 10 V, ID = 0.5 A gfs — 0.9 — Siemens Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS ±20 Vdc Operating Junction Temperature TJ 200 °C Total Device Dissipation PD 58 Watts 0.33 W/°C Above 25°C derate by Storage Temperature TSTG 150 °C Thermal Resistance (TCASE = 70°C) RqJC 3.0 °C/W Typical POUT , Gain & Efficiency (at P-1dB) vs. Frequency Output Power Efficiency (%) 65 60 19 55 18 VDD = 26 V Efficiency 50 IDQ = 130 mA 17 45 Gain 16 40 15 35 960 860 880 900 920 940 50 16 40 Gain 20 VDD = 26 V Gain (dB) 12 IDQ = 130 mA POUT = 18 W 8 Return Loss (dB) 4 920 Frequency (MHz) 930 940 Frequency (MHz) 2 950 30 0 - 20 5 -10 -15 10 -20 -25 0 960 Efficiency 60 70 Return Loss 21 Broadband Test Fixture Performance 20 Efficiency (%) Gain (dB) & Output Power (W) Typical Performance e PTF 10162 Output Power (at 1 dB Compression) vs. Supply Voltage Power Gain vs. Output Power 16 24 Output Power (Watts) 15 IDQ = 65 mA 14 IDQ = 35 mA VDD = 26 V f = 960 MHz 13 12 22 20 18 IDQ = 130 mA f = 960 MHz 16 14 0.1 1.0 10.0 100.0 22 24 Output Power (Watts) Intermodulation Distortion vs. Output Power 50 VDD = 26 V 40 Cds and Cgs (pF) 3rd Order f1 = 959.900 MHz -30 f2 =960.000 MHz 5th -40 7th -50 30 0 5 10 32 34 6 5 Cgs 4 30 VGS = 0 V f = 1 MHz 20 15 20 2 10 1 Crss 0 25 10 Bias Voltage vs. Temperature Voltage normalized to 1.0 V Series show current (A) 1.02 1.01 1.00 0.99 0.98 0.97 0.96 0.075 0.33 0.585 0.84 1.095 1.35 0.95 -20 20 30 Supply Voltage (Volts) Output Power (Watts-PEP) 1.03 0 20 40 Temp. (°C) 3 3 Cds 0 -60 Bias Voltage (V) IMD (dBc) IDQ = 130 mA -20 28 Capacitance vs. Supply Voltage (as measured in a broadband circuit) 0 -10 26 Supply Voltage (Volts) 60 80 100 0 40 Crss (pF) Power Gain (dB) IDQ = 130 mA e PTF 10162 ---> Impedance Data OR EN E Z Load T OW A RD G Z Source RA T D Z0 = 50 W 0. 2 VDD = 26 V, POUT = 18 W, IDQ = 130 mA Z Load 0 .1 G 960 MHz S 2.0 2.7 5.8 4.4 880 2.0 2.6 5.5 4.6 900 2.0 2.4 5.0 5.0 920 1.9 2.3 4.8 5.1 960 1.9 2.1 4.7 5.3 4 0.1 960 MHz 0.2 860 Z Source 0 .0 jX AV R ELE N jX G TH S R 0.1 Z Load W MHz OA D TO W AR D L Z Source W Frequency 860 MHz 860 MHz e PTF 10162 Typical Scattering Parameters (VDS = 26 V, ID = 500 mA) f (MHz) S11 S21 S12 Mag Ang Mag Ang Mag Ang Mag Ang 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 0.828 0.821 0.817 0.825 0.836 0.847 0.859 0.870 0.883 0.892 0.902 0.909 0.919 0.922 0.930 0.934 0.941 0.943 0.944 0.946 0.950 0.950 0.952 0.952 0.952 0.953 0.956 0.954 0.952 0.952 0.949 0.948 0.947 0.946 0.945 0.943 0.942 0.945 0.947 0.949 0.951 0.952 0.956 -120 -138 -148 -155 -160 -164 -167 -170 -172 -174 -176 -179 180 178 176 174 173 171 170 169 167 166 164 163 162 160 159 157 156 154 153 151 150 148 147 145 143 142 140 139 137 136 134 27.9 19.2 14.1 10.8 8.75 7.09 5.96 5.02 4.31 3.71 3.20 2.81 2.48 2.19 1.97 1.77 1.61 1.47 1.31 1.21 1.12 1.02 0.952 0.902 0.805 0.781 0.732 0.688 0.660 0.619 0.573 0.591 0.523 0.492 0.498 0.453 0.442 0.433 0.406 0.401 0.392 0.376 0.357 103 87.8 77.5 69.6 62.7 56.4 51.3 45.6 42.2 36.9 33.3 29.6 26.7 23.6 21.1 17.5 16.3 12.5 10.8 8.51 5.94 3.97 4.03 0.16 -0.92 -1.19 -5.01 -5.67 -6.40 -6.60 -7.30 -7.58 -7.59 -7.59 -7.60 -7.64 -6.40 -6.23 -6.20 -5.74 -5.20 -4.36 -4.30 0.015 0.014 0.013 0.011 0.009 0.007 0.006 0.007 0.008 0.011 0.014 0.016 0.020 0.022 0.025 0.028 0.032 0.035 0.039 0.043 0.046 0.049 0.053 0.057 0.060 0.065 0.068 0.072 0.078 0.084 0.085 0.097 0.096 0.106 0.113 0.119 0.124 0.134 0.135 0.150 0.154 0.171 0.171 20.6 10.7 6.0 6.5 9.7 20.7 41.5 64.2 83.2 92.6 97.9 98.5 98.6 98.7 99.3 98.6 98.3 95.8 95.4 92.5 91.7 91.4 90.5 87.1 87.6 86.6 84.9 84.9 84.2 83.9 83.7 83.1 82.2 81.6 81.4 80.9 79.8 79.6 79.5 80.1 79.4 79.0 76.1 0.597 0.576 0.571 0.602 0.628 0.661 0.698 0.723 0.754 0.783 0.805 0.831 0.845 0.860 0.880 0.890 0.904 0.916 0.922 0.930 0.937 0.945 0.945 0.955 0.951 0.958 0.955 0.963 0.953 0.967 0.950 0.959 0.950 0.949 0.953 0.952 0.947 0.957 0.953 0.946 0.955 0.950 0.949 -65.9 -79.6 -91.7 -102 -110 -118 -124 -130 -135 -140 -144 -149 -152 -155 -158 -161 -164 -166 -168 -171 -172 -174 -176 -178 -180 178 177 175 173 172 170 169 167 166 163 163 160 159 157 156 153 153 150 5 S22 e PTF 10162 Test Circuit Test Circuit Schematic for f = 960 MHz DUT l1 l2 l3, l4 l5 l6 C1, C2, C5, C8 C3 C4 C6 C7 C9 L1 R1, R2, R3 Circuit Board PTF 10162 Microstrip 50 W (0.098 l, 960 MHz) Microstrip 8.4 W (0.025 l, 960 MHz) Microstrip 8.4 W (0.084 l, 960 MHz) Microstrip 13.9 W (0.256 l, 960 MHz) Microstrip 50 W (0.040 l, 960 MHz) Capacitor, 36 pF ATC 100 B Capacitor, 3.0 pF ATC 100 B Capacitor, 3.6 pF ATC 100 B Capacitor, 0.1 µF, 50 V Digi-Key P4525-ND Capacitor, 100 µF, 50 V Digi-Key P5182-ND Capacitor, 0.7pF ATC 100 B 4 Turns, 20 AWG, .120 I.D. N/A Resistor, 220 W Digi-Key 2.2 QBK .028" Dielectric Thickness, er = 4.0, AlliedSignal, G200, 2 oz. copper Placement Diagram (not to scale) 6 e Test Circuit PTF 10162 (Check our Web site at www.ericsson.com/rfpower for Gerber files for this circuit.) Artwork (1 inch ). Package Mechanical Specifications Package 20222 Unless otherwise specified all tolerances ±0.005” Ericsson Microelectronics RF Power Products Morgan Hill, CA 95037 USA Pin Configuration: 1.Drain 2.Source 3.Gate Lead Thickness: 0.005 +0.001/-0.002” 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: [email protected] www.ericsson.com/rfpower 7 Specifications subject to change without notice. L3 © 1999 Ericsson Inc. EUS/KR 1301-PTF 10162 Uen Rev. A 12-06-99 e Notes: 8